DE69618518D1 - Apparat zur photoelektrischen Umwandlung und Apparat zur Aufnahme eines Röntgenbildes - Google Patents

Apparat zur photoelektrischen Umwandlung und Apparat zur Aufnahme eines Röntgenbildes

Info

Publication number
DE69618518D1
DE69618518D1 DE69618518T DE69618518T DE69618518D1 DE 69618518 D1 DE69618518 D1 DE 69618518D1 DE 69618518 T DE69618518 T DE 69618518T DE 69618518 T DE69618518 T DE 69618518T DE 69618518 D1 DE69618518 D1 DE 69618518D1
Authority
DE
Germany
Prior art keywords
taking
photoelectric conversion
ray image
ray
image
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69618518T
Other languages
English (en)
Other versions
DE69618518T2 (de
Inventor
Isao Kobayashi
Akira Funakoshi
Akira Tago
Noriyuki Kaifu
Shinichi Takeda
Eiichi Takami
Masakazu Morishita
Shinichi Hayashi
Chiori Mochizuki
Tadao Endo
Toshikazu Tamura
Kazuaki Tashiro
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE69618518D1 publication Critical patent/DE69618518D1/de
Publication of DE69618518T2 publication Critical patent/DE69618518T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14623—Optical shielding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
    • H01L27/14663—Indirect radiation imagers, e.g. using luminescent members

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Measurement Of Radiation (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Facsimile Heads (AREA)
  • Color Television Image Signal Generators (AREA)
  • Facsimile Scanning Arrangements (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
DE69618518T 1995-09-28 1996-09-26 Apparat zur photoelektrischen Umwandlung und Apparat zur Aufnahme eines Röntgenbildes Expired - Lifetime DE69618518T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP25051195 1995-09-28
JP58296 1996-01-08
JP4741796 1996-03-05
JP24770996A JP3235717B2 (ja) 1995-09-28 1996-09-19 光電変換装置及びｘ線撮像装置

Publications (2)

Publication Number Publication Date
DE69618518D1 true DE69618518D1 (de) 2002-02-21
DE69618518T2 DE69618518T2 (de) 2002-06-13

Family

ID=27453209

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69618518T Expired - Lifetime DE69618518T2 (de) 1995-09-28 1996-09-26 Apparat zur photoelektrischen Umwandlung und Apparat zur Aufnahme eines Röntgenbildes

Country Status (4)

Country Link
US (1) US5793047A (de)
EP (1) EP0766317B1 (de)
JP (1) JP3235717B2 (de)
DE (1) DE69618518T2 (de)

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JP3805100B2 (ja) * 1997-04-10 2006-08-02 キヤノン株式会社 光電変換装置
JP3847918B2 (ja) * 1997-10-01 2006-11-22 キヤノン株式会社 光電変換装置
WO1999042799A1 (en) * 1998-02-18 1999-08-26 Honeywell Data Instruments, Inc. Electrically insulated strain gage
JPH11307756A (ja) * 1998-02-20 1999-11-05 Canon Inc 光電変換装置および放射線読取装置
US6027953A (en) * 1998-02-25 2000-02-22 Industrial Technology Research Institute Lateral PN arrayed digital X-ray image sensor
GB2382666B (en) 1998-06-05 2003-07-16 Drs Hadland Ltd Imaging arrangement and method
JP2000077640A (ja) 1998-06-19 2000-03-14 Canon Inc 画像読み取り装置および放射線撮像装置
JP2000021699A (ja) * 1998-07-01 2000-01-21 Ulvac Corp 集成半導体基板およびその製造方法
JP4311693B2 (ja) 1998-07-30 2009-08-12 キヤノン株式会社 光電変換装置及びそのリペア方法、それを用いたｘ線撮像システム
JP2000131444A (ja) 1998-10-28 2000-05-12 Canon Inc 放射線検出装置、放射線検出システム、及び放射線検出装置の製造方法
US6855935B2 (en) 2000-03-31 2005-02-15 Canon Kabushiki Kaisha Electromagnetic wave detector
EP1284014A4 (de) 2000-04-20 2006-09-13 Digirad Corp Technik zur unterdrückung des randstroms in halbleiterbauelementen
JP3715873B2 (ja) * 2000-07-27 2005-11-16 キヤノン株式会社 撮像装置、放射線撮像装置及びそれを用いた放射線撮像システム
JP2002148342A (ja) * 2000-11-07 2002-05-22 Canon Inc 放射線撮像装置
US6855937B2 (en) * 2001-05-18 2005-02-15 Canon Kabushiki Kaisha Image pickup apparatus
TW564471B (en) 2001-07-16 2003-12-01 Semiconductor Energy Lab Semiconductor device and peeling off method and method of manufacturing semiconductor device
JP2003050280A (ja) * 2001-08-03 2003-02-21 Konica Corp 放射線画像検出器
KR100781494B1 (ko) * 2001-12-29 2007-11-30 매그나칩 반도체 유한회사 이미지센서칩
US6909100B2 (en) * 2002-07-25 2005-06-21 Ii-Vi Incorporated Radiation detector assembly
DE60336291D1 (de) * 2002-11-13 2011-04-21 Canon Kk Bildaufnahmevorrichtung, Strahlungsbildaufnahmevorrichtung und Strahlungsbildaufnahmesystem
JP4289913B2 (ja) * 2003-03-12 2009-07-01 キヤノン株式会社 放射線検出装置及びその製造方法
JP4389626B2 (ja) * 2004-03-29 2009-12-24 ソニー株式会社 固体撮像素子の製造方法
US7410906B2 (en) * 2004-07-16 2008-08-12 Fujifilm Corporation Functional device and method for producing the same, and image pickup device and method for producing the same
JP2007101256A (ja) * 2005-09-30 2007-04-19 Fujifilm Corp Ｘ線撮像装置及びｘ線ｃｔ装置
DE102006021046B4 (de) 2006-05-05 2013-06-06 Siemens Aktiengesellschaft Röntgendetektor
US7569832B2 (en) * 2006-07-14 2009-08-04 Carestream Health, Inc. Dual-screen digital radiographic imaging detector array
FR2916575B1 (fr) * 2007-05-23 2009-09-18 Trixell Sas Soc Par Actions Si Procede de realisation d'un detecteur de rayonnement
JP5172267B2 (ja) * 2007-10-09 2013-03-27 富士フイルム株式会社 撮像装置
JP2008113018A (ja) * 2007-12-03 2008-05-15 Sony Corp 固体撮像素子とその製造方法、及び半導体集積回路装置とその製造方法
US8564084B2 (en) * 2008-06-16 2013-10-22 Koninklijke Philips N.V. Radiation detection and a method of manufacturing a radiation detector
DE102011004652A1 (de) * 2010-02-26 2011-09-01 Electronics And Telecommunications Research Institute Verfahren zur Herstellung einer lichtabsorbierenden Dünnfilmschicht und ein dieses verwendendes Verfahren zur Herstellung einer Dünnfilm-Solarzelle
JP2011191156A (ja) * 2010-03-15 2011-09-29 Ricoh Co Ltd 濃度センサおよび画像生成装置
US20110291132A1 (en) * 2010-05-28 2011-12-01 Fang-Chang Liu Light-emiting device with improved color rendering index
US8629472B2 (en) * 2010-12-02 2014-01-14 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device, electronic device, and lighting device
JP5707269B2 (ja) 2011-07-29 2015-04-22 富士フイルム株式会社 放射線画像検出装置
CN110265368B (zh) 2012-02-07 2024-06-21 株式会社尼康 拍摄单元及拍摄装置
JP5965665B2 (ja) * 2012-02-23 2016-08-10 ジーイー・メディカル・システムズ・グローバル・テクノロジー・カンパニー・エルエルシー 検出器モジュール、遮光部材および放射線検出装置並びに放射線断層撮影装置
DE102012207956B4 (de) * 2012-05-11 2017-06-14 Siemens Healthcare Gmbh Röntgenstrahlungsdetektor zur Verwendung in einem CT-System
JP5395240B2 (ja) * 2012-09-26 2014-01-22 浜松ホトニクス株式会社 固体撮像装置
JP6250959B2 (ja) * 2013-06-19 2017-12-20 キヤノン株式会社 放射線検出装置およびその製造方法
US20140374608A1 (en) * 2013-06-19 2014-12-25 Canon Kabushiki Kaisha Radiation detection apparatus and method of manufacturing the same
JP2015017956A (ja) * 2013-07-12 2015-01-29 東芝電子管デバイス株式会社 放射線検出器
IL238368B (en) * 2015-04-19 2019-08-29 Semi Conductor Devices An Elbit Systems Rafael Partnership light sensor
US9599723B2 (en) * 2015-08-18 2017-03-21 Carestream Health, Inc. Method and apparatus with tiled image sensors
JP6748486B2 (ja) * 2016-06-08 2020-09-02 浜松ホトニクス株式会社 光検出ユニット、光検出装置、及び、光検出ユニットの製造方法
DE102016210935B4 (de) * 2016-06-20 2020-07-09 Siemens Healthcare Gmbh Röntgendetektor mit intransparenter Zwischenschicht

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JPS6271881A (ja) * 1985-09-26 1987-04-02 Toshiba Corp 放射線検出器
US5220170A (en) * 1985-12-11 1993-06-15 General Imaging Corporation X-ray imaging system and solid state detector therefor
US4914301A (en) * 1987-04-21 1990-04-03 Kabushiki Kaisha Toshiba X-ray detector
JPS6415970A (en) * 1987-07-09 1989-01-19 Canon Kk Image reading equipment
US5041729A (en) * 1987-10-28 1991-08-20 Hitachi, Ltd. Radiation detector and manufacturing process thereof
DE3900245A1 (de) * 1988-01-06 1989-07-20 Hitachi Ltd Mehrelement-strahlungsdetektor
US5059800A (en) * 1991-04-19 1991-10-22 General Electric Company Two dimensional mosaic scintillation detector
US5550378A (en) * 1993-04-05 1996-08-27 Cardiac Mariners, Incorporated X-ray detector
US5430298A (en) * 1994-06-21 1995-07-04 General Electric Company CT array with improved photosensor linearity and reduced crosstalk

Also Published As

Publication number Publication date
JP3235717B2 (ja) 2001-12-04
EP0766317A2 (de) 1997-04-02
EP0766317B1 (de) 2002-01-16
DE69618518T2 (de) 2002-06-13
US5793047A (en) 1998-08-11
EP0766317A3 (de) 1998-12-23
JPH09298287A (ja) 1997-11-18

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