DE69611804D1 - Bildung eines isolierenden dünnen Filmes durch eine Vielzahl von Ionenstrahlen - Google Patents
Bildung eines isolierenden dünnen Filmes durch eine Vielzahl von IonenstrahlenInfo
- Publication number
- DE69611804D1 DE69611804D1 DE69611804T DE69611804T DE69611804D1 DE 69611804 D1 DE69611804 D1 DE 69611804D1 DE 69611804 T DE69611804 T DE 69611804T DE 69611804 T DE69611804 T DE 69611804T DE 69611804 D1 DE69611804 D1 DE 69611804D1
- Authority
- DE
- Germany
- Prior art keywords
- formation
- thin film
- large number
- ion beams
- insulating thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
- C23C14/0047—Activation or excitation of reactive gases outside the coating chamber
- C23C14/0052—Bombardment of substrates by reactive ion beams
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/081—Oxides of aluminium, magnesium or beryllium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/46—Sputtering by ion beam produced by an external ion source
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
- C23C14/505—Substrate holders for rotation of the substrates
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
- G11B5/8404—Processes or apparatus specially adapted for manufacturing record carriers manufacturing base layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/187—Structure or manufacture of the surface of the head in physical contact with, or immediately adjacent to the recording medium; Pole pieces; Gap features
- G11B5/23—Gap features
- G11B5/232—Manufacture of gap
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3109—Details
- G11B5/313—Disposition of layers
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Physical Vapour Deposition (AREA)
- Magnetic Heads (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US42322795A | 1995-04-17 | 1995-04-17 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE69611804D1 true DE69611804D1 (de) | 2001-03-29 |
Family
ID=23678099
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69611804T Expired - Lifetime DE69611804D1 (de) | 1995-04-17 | 1996-04-12 | Bildung eines isolierenden dünnen Filmes durch eine Vielzahl von Ionenstrahlen |
Country Status (4)
Country | Link |
---|---|
US (1) | US5962080A (de) |
EP (1) | EP0739001B1 (de) |
JP (1) | JPH08296042A (de) |
DE (1) | DE69611804D1 (de) |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2321063A (en) * | 1997-01-08 | 1998-07-15 | Oxford Plasma Technology Ltd | Reactive particle beam sputtering |
US6086727A (en) | 1998-06-05 | 2000-07-11 | International Business Machines Corporation | Method and apparatus to improve the properties of ion beam deposited films in an ion beam sputtering system |
US6214183B1 (en) * | 1999-01-30 | 2001-04-10 | Advanced Ion Technology, Inc. | Combined ion-source and target-sputtering magnetron and a method for sputtering conductive and nonconductive materials |
US6296741B1 (en) * | 1999-06-25 | 2001-10-02 | International Business Machines Corporation | Method of making oxide barrier layer for a spin tunnel junction |
US6783635B2 (en) * | 1999-12-09 | 2004-08-31 | International Business Machines Corporation | Spin valve sensor free layer structure with a cobalt based layer that promotes magnetic stability and high magnetoresistance |
US6853520B2 (en) | 2000-09-05 | 2005-02-08 | Kabushiki Kaisha Toshiba | Magnetoresistance effect element |
US6707647B2 (en) | 2001-01-29 | 2004-03-16 | International Business Machines Corporation | Magnetic head with thin gap layers |
US6679976B2 (en) | 2001-03-16 | 2004-01-20 | 4Wave, Inc. | System and method for performing sputter deposition with multiple targets using independent ion and electron sources and independent target biasing with DC pulse signals |
US6402900B1 (en) * | 2001-03-16 | 2002-06-11 | 4 Wave, Inc. | System and method for performing sputter deposition using ion sources, targets and a substrate arranged about the faces of a cube |
FR2856677B1 (fr) * | 2003-06-27 | 2006-12-01 | Saint Gobain | Substrat revetu d'une couche dielectrique et procede pour sa fabrication |
FR2857467B1 (fr) * | 2003-07-09 | 2005-08-19 | Saint Gobain | Dispositif electrocommandable a proprietes optiques et/ou energetiques variables |
US7374642B2 (en) * | 2004-01-30 | 2008-05-20 | Deutchman Arnold H | Treatment process for improving the mechanical, catalytic, chemical, and biological activity of surfaces and articles treated therewith |
JP4786331B2 (ja) | 2005-12-21 | 2011-10-05 | 株式会社東芝 | 磁気抵抗効果素子の製造方法 |
JP4514721B2 (ja) | 2006-02-09 | 2010-07-28 | 株式会社東芝 | 磁気抵抗効果素子の製造方法、磁気抵抗効果素子、磁気抵抗効果ヘッド、磁気記録再生装置及び磁気記憶装置 |
JP2007299880A (ja) | 2006-04-28 | 2007-11-15 | Toshiba Corp | 磁気抵抗効果素子,および磁気抵抗効果素子の製造方法 |
JP4550777B2 (ja) | 2006-07-07 | 2010-09-22 | 株式会社東芝 | 磁気抵抗効果素子の製造方法、磁気抵抗効果素子、磁気ヘッド、磁気記録再生装置及び磁気メモリ |
JP4388093B2 (ja) | 2007-03-27 | 2009-12-24 | 株式会社東芝 | 磁気抵抗効果素子、磁気ヘッド、磁気記録再生装置 |
US20090020415A1 (en) * | 2007-07-16 | 2009-01-22 | Michael Gutkin | "Iontron" ion beam deposition source and a method for sputter deposition of different layers using this source |
CN101765677B (zh) | 2007-08-29 | 2012-01-25 | 佳能安内华股份有限公司 | 通过溅射的成膜方法及其溅射设备 |
JP5036501B2 (ja) * | 2007-11-19 | 2012-09-26 | 小島プレス工業株式会社 | 基材の支持装置及びスパッタリング装置 |
JP5259626B2 (ja) * | 2007-12-26 | 2013-08-07 | キヤノンアネルバ株式会社 | スパッタ装置、スパッタ成膜方法 |
JP5039006B2 (ja) | 2008-09-26 | 2012-10-03 | 株式会社東芝 | 磁気抵抗効果素子の製造方法、磁気抵抗効果素子、磁気ヘッドアセンブリ及び磁気記録再生装置 |
JP5039007B2 (ja) | 2008-09-26 | 2012-10-03 | 株式会社東芝 | 磁気抵抗効果素子の製造方法、磁気抵抗効果素子、磁気ヘッドアセンブリ及び磁気記録再生装置 |
JP2010080839A (ja) | 2008-09-29 | 2010-04-08 | Toshiba Corp | 磁気抵抗効果素子の製造方法、磁気抵抗効果素子、磁気ヘッドアセンブリおよび磁気記録再生装置 |
CN101855381B (zh) | 2008-12-22 | 2012-07-04 | 佳能安内华股份有限公司 | 溅射设备和膜沉积方法 |
JP5280459B2 (ja) | 2008-12-25 | 2013-09-04 | キヤノンアネルバ株式会社 | スパッタリング装置 |
CN107723675A (zh) * | 2017-11-17 | 2018-02-23 | 东莞颠覆产品设计有限公司 | 物理气相沉积设备和物理气相沉积方法 |
US20210080380A1 (en) * | 2019-09-16 | 2021-03-18 | Halliburton Energy Services, Inc. | Customized Thin Film Optical Element Fabrication System and Method |
CN113621929B (zh) * | 2020-05-08 | 2023-04-11 | 武汉光谷创元电子有限公司 | 微波器件的制造设备和制造方法 |
GB2599393A (en) * | 2020-09-30 | 2022-04-06 | Dyson Technology Ltd | Method and apparatus for sputter deposition |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3889632A (en) * | 1974-05-31 | 1975-06-17 | Ibm | Variable incidence drive for deposition tooling |
JPS6115967A (ja) * | 1984-06-29 | 1986-01-24 | Sumitomo Electric Ind Ltd | 表面処理方法 |
JPS61189669A (ja) * | 1985-02-19 | 1986-08-23 | Matsushita Electric Ind Co Ltd | 薄膜トランジスタの製造方法 |
US4652954A (en) * | 1985-10-24 | 1987-03-24 | International Business Machines | Method for making a thin film magnetic head |
US4793908A (en) * | 1986-12-29 | 1988-12-27 | Rockwell International Corporation | Multiple ion source method and apparatus for fabricating multilayer optical films |
US4886681A (en) * | 1987-01-20 | 1989-12-12 | International Business Machines Corporation | Metal-polymer adhesion by low energy bombardment |
US4816133A (en) * | 1987-05-14 | 1989-03-28 | Northrop Corporation | Apparatus for preparing thin film optical coatings on substrates |
JPH01149474A (ja) * | 1987-12-04 | 1989-06-12 | Matsushita Electric Ind Co Ltd | 薄膜トランジスタの製造方法 |
JP2629223B2 (ja) * | 1988-01-07 | 1997-07-09 | 富士ゼロックス株式会社 | 電子写真感光体の製造方法 |
US4874493A (en) * | 1988-03-28 | 1989-10-17 | Microelectronics And Computer Technology Corporation | Method of deposition of metal into cavities on a substrate |
US4992298A (en) * | 1988-10-11 | 1991-02-12 | Beamalloy Corporation | Dual ion beam ballistic alloying process |
US4951604A (en) * | 1989-02-17 | 1990-08-28 | Optical Coating Laboratory, Inc. | System and method for vacuum deposition of thin films |
FR2644180B1 (fr) * | 1989-03-08 | 1991-05-10 | Commissariat Energie Atomique | Dispositif pour recouvrir une surface plane d'une couche d'epaisseur uniforme |
JP2713481B2 (ja) * | 1989-12-04 | 1998-02-16 | 株式会社日立製作所 | イオンビームスパッタによる多元系薄膜形成方法および多元系薄膜形成装置 |
US5301418A (en) * | 1991-04-12 | 1994-04-12 | U.S. Philips Corporation | Method of manufacturing a magnetic head |
US5240583A (en) * | 1992-01-14 | 1993-08-31 | Honeywell Inc. | Apparatus to deposit multilayer films |
-
1996
- 1996-04-12 EP EP96105811A patent/EP0739001B1/de not_active Expired - Lifetime
- 1996-04-12 JP JP8091060A patent/JPH08296042A/ja active Pending
- 1996-04-12 DE DE69611804T patent/DE69611804D1/de not_active Expired - Lifetime
-
1997
- 1997-02-10 US US08/795,161 patent/US5962080A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0739001B1 (de) | 2001-02-21 |
JPH08296042A (ja) | 1996-11-12 |
US5962080A (en) | 1999-10-05 |
EP0739001A2 (de) | 1996-10-23 |
EP0739001A3 (de) | 1998-05-13 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8332 | No legal effect for de |