FR2733857B1 - Depot d'isolant utilisant un faisceau d'ions focalise - Google Patents
Depot d'isolant utilisant un faisceau d'ions focaliseInfo
- Publication number
- FR2733857B1 FR2733857B1 FR9605206A FR9605206A FR2733857B1 FR 2733857 B1 FR2733857 B1 FR 2733857B1 FR 9605206 A FR9605206 A FR 9605206A FR 9605206 A FR9605206 A FR 9605206A FR 2733857 B1 FR2733857 B1 FR 2733857B1
- Authority
- FR
- France
- Prior art keywords
- ion beam
- focused ion
- insulation deposit
- deposit
- insulation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000009413 insulation Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
- C23C16/047—Coating on selected surface areas, e.g. using masks using irradiation by energy or particles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
- C23C16/402—Silicon dioxide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
- H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31604—Deposition from a gas or vapour
- H01L21/31608—Deposition of SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
- H01L21/76892—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances modifying the pattern
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Health & Medical Sciences (AREA)
- Inorganic Chemistry (AREA)
- Toxicology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/434,548 US5700526A (en) | 1995-05-04 | 1995-05-04 | Insulator deposition using focused ion beam |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2733857A1 FR2733857A1 (fr) | 1996-11-08 |
FR2733857B1 true FR2733857B1 (fr) | 2001-10-12 |
Family
ID=23724678
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR9605206A Expired - Fee Related FR2733857B1 (fr) | 1995-05-04 | 1996-04-23 | Depot d'isolant utilisant un faisceau d'ions focalise |
Country Status (5)
Country | Link |
---|---|
US (1) | US5700526A (fr) |
JP (1) | JPH09120962A (fr) |
DE (1) | DE19617027A1 (fr) |
FR (1) | FR2733857B1 (fr) |
GB (1) | GB2300515B (fr) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5747818A (en) * | 1996-10-21 | 1998-05-05 | Schlumberger Technologies Inc. | Thermoelectric cooling in gas-assisted FIB system |
US6171944B1 (en) * | 1998-05-07 | 2001-01-09 | Advanced Micro Devices, Inc. | Method for bringing up lower level metal nodes of multi-layered integrated circuits for signal acquisition |
WO2000065644A1 (fr) * | 1999-04-21 | 2000-11-02 | Seiko Instruments Inc. | Technique de restauration d'une interconnexion et dispositif a faisceau ionique focalise |
DE19934089A1 (de) * | 1999-07-19 | 2001-01-25 | Univ Schiller Jena | Verfahren zur Erzeugung elektrisch leitender Bereiche in mehrkomponentigen Materialien |
US20060051508A1 (en) * | 2000-12-28 | 2006-03-09 | Ilan Gavish | Focused ion beam deposition |
US6638580B2 (en) * | 2000-12-29 | 2003-10-28 | Intel Corporation | Apparatus and a method for forming an alloy layer over a substrate using an ion beam |
US6492261B2 (en) * | 2000-12-30 | 2002-12-10 | Intel Corporation | Focused ion beam metal deposition |
AU2002336400A1 (en) | 2001-08-27 | 2003-03-10 | Nptest, Inc. | Process for charged particle beam micro-machining of copper |
JP4302933B2 (ja) * | 2002-04-22 | 2009-07-29 | 株式会社日立ハイテクノロジーズ | イオンビームによる穴埋め方法及びイオンビーム装置 |
US20070015335A1 (en) * | 2003-02-28 | 2007-01-18 | Japan Science And Technology Agency | Production method for antenna and production device for antenna |
US7060196B2 (en) * | 2003-10-03 | 2006-06-13 | Credence Systems Corporation | FIB milling of copper over organic dielectrics |
US20060199082A1 (en) * | 2005-03-01 | 2006-09-07 | International Business Machines Corporation | Mask repair |
JP5371142B2 (ja) * | 2006-07-14 | 2013-12-18 | エフ・イ−・アイ・カンパニー | マルチソース型のプラズマ集束イオン・ビーム・システム |
JP4959509B2 (ja) * | 2007-11-06 | 2012-06-27 | 株式会社デンソー | 燃料噴射弁 |
US8617668B2 (en) * | 2009-09-23 | 2013-12-31 | Fei Company | Method of using nitrogen based compounds to reduce contamination in beam-induced thin film deposition |
US8377722B2 (en) | 2010-02-10 | 2013-02-19 | International Business Machines Corporation | Methods of forming structures with a focused ion beam for use in atomic force probing and structures for use in atomic force probing |
EP2612342B1 (fr) | 2010-08-31 | 2018-08-22 | FEI Company | Navigation et traitement d'échantillons à l'aide d'une source d'ions contenant des espèces à masse faible et à masse élevée |
JP5442572B2 (ja) * | 2010-09-28 | 2014-03-12 | 株式会社日立ハイテクサイエンス | 荷電粒子ビーム装置、薄膜作製方法、欠陥修正方法及びデバイス作製方法 |
US20130095307A1 (en) * | 2011-10-17 | 2013-04-18 | Cella Energy Limited | Spacecraft and spacesuit shield |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0199585B1 (fr) * | 1985-04-23 | 1990-07-04 | Seiko Instruments Inc. | Appareil pour le dépôt d'un matériau électriquement conducteur et/ou isolant sur un substrat |
JPH0763064B2 (ja) * | 1986-03-31 | 1995-07-05 | 株式会社日立製作所 | Ic素子における配線接続方法 |
US5273849A (en) * | 1987-11-09 | 1993-12-28 | At&T Bell Laboratories | Mask repair |
US5083033A (en) * | 1989-03-31 | 1992-01-21 | Kabushiki Kaisha Toshiba | Method of depositing an insulating film and a focusing ion beam apparatus |
US5104684A (en) * | 1990-05-25 | 1992-04-14 | Massachusetts Institute Of Technology | Ion beam induced deposition of metals |
US5236547A (en) * | 1990-09-25 | 1993-08-17 | Kabushiki Kaisha Toshiba | Method of forming a pattern in semiconductor device manufacturing process |
US5149974A (en) * | 1990-10-29 | 1992-09-22 | International Business Machines Corporation | Gas delivery for ion beam deposition and etching |
US5140164A (en) * | 1991-01-14 | 1992-08-18 | Schlumberger Technologies, Inc. | Ic modification with focused ion beam system |
JP3688726B2 (ja) * | 1992-07-17 | 2005-08-31 | 株式会社東芝 | 半導体装置の製造方法 |
-
1995
- 1995-05-04 US US08/434,548 patent/US5700526A/en not_active Expired - Fee Related
-
1996
- 1996-04-17 GB GB9607972A patent/GB2300515B/en not_active Expired - Lifetime
- 1996-04-23 FR FR9605206A patent/FR2733857B1/fr not_active Expired - Fee Related
- 1996-04-27 DE DE19617027A patent/DE19617027A1/de not_active Withdrawn
- 1996-05-07 JP JP8112683A patent/JPH09120962A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
GB2300515B (en) | 1997-07-09 |
GB2300515A (en) | 1996-11-06 |
DE19617027A1 (de) | 1996-11-07 |
GB9607972D0 (en) | 1996-06-19 |
FR2733857A1 (fr) | 1996-11-08 |
JPH09120962A (ja) | 1997-05-06 |
US5700526A (en) | 1997-12-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |