IL116876A0 - Pulsed ion beam assisted deposition - Google Patents

Pulsed ion beam assisted deposition

Info

Publication number
IL116876A0
IL116876A0 IL11687696A IL11687696A IL116876A0 IL 116876 A0 IL116876 A0 IL 116876A0 IL 11687696 A IL11687696 A IL 11687696A IL 11687696 A IL11687696 A IL 11687696A IL 116876 A0 IL116876 A0 IL 116876A0
Authority
IL
Israel
Prior art keywords
ion beam
assisted deposition
beam assisted
pulsed ion
pulsed
Prior art date
Application number
IL11687696A
Original Assignee
Sandia Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sandia Corp filed Critical Sandia Corp
Publication of IL116876A0 publication Critical patent/IL116876A0/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5826—Treatment with charged particles
    • C23C14/5833—Ion beam bombardment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/221—Ion beam deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
    • C23C26/02—Coating not provided for in groups C23C2/00 - C23C24/00 applying molten material to the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H01J27/08—Ion sources; Ion guns using arc discharge
    • H01J27/14—Other arc discharge ion sources using an applied magnetic field
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3178—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for applying thin layers on objects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/31—Processing objects on a macro-scale
    • H01J2237/3142—Ion plating
IL11687696A 1995-01-23 1996-01-23 Pulsed ion beam assisted deposition IL116876A0 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US37670295A 1995-01-23 1995-01-23

Publications (1)

Publication Number Publication Date
IL116876A0 true IL116876A0 (en) 1996-07-23

Family

ID=23486107

Family Applications (1)

Application Number Title Priority Date Filing Date
IL11687696A IL116876A0 (en) 1995-01-23 1996-01-23 Pulsed ion beam assisted deposition

Country Status (6)

Country Link
EP (1) EP0757598A4 (en)
JP (1) JPH09511028A (en)
AU (1) AU4965896A (en)
CA (1) CA2186102A1 (en)
IL (1) IL116876A0 (en)
WO (1) WO1996022841A1 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AUPR179500A0 (en) * 2000-11-30 2000-12-21 Saintech Pty Limited Ion source
FR2832736B1 (en) * 2001-11-28 2004-12-10 Eppra IMPROVED METHOD FOR COATING A SUPPORT WITH A MATERIAL
CN100341121C (en) * 2003-09-10 2007-10-03 台湾积体电路制造股份有限公司 Modifying method for dielectric layer, modified dielectric layer and uses in mosaic metal process
FR2865946B1 (en) 2004-02-09 2007-12-21 Commissariat Energie Atomique METHOD FOR PRODUCING A LAYER OF MATERIAL ON A SUPPORT
US7703479B2 (en) 2005-10-17 2010-04-27 The University Of Kentucky Research Foundation Plasma actuator
JP6470061B2 (en) * 2015-02-03 2019-02-13 スタンレー電気株式会社 Manufacturing method of p-type ZnO-based semiconductor structure and manufacturing method of ZnO-based semiconductor element

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2155024A (en) * 1984-03-03 1985-09-18 Standard Telephones Cables Ltd Surface treatment of plastics materials
US4844785A (en) * 1984-03-27 1989-07-04 Matsushita Electric Industrial Co., Ltd. Method for deposition of hard carbon film
ATE80955T1 (en) * 1984-06-20 1992-10-15 Gould Inc LASER PROCESS FOR PHOTOMASK REPAIR.
US4490229A (en) * 1984-07-09 1984-12-25 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Deposition of diamondlike carbon films
US4793908A (en) * 1986-12-29 1988-12-27 Rockwell International Corporation Multiple ion source method and apparatus for fabricating multilayer optical films
US5055318A (en) * 1988-10-11 1991-10-08 Beamalloy Corporation Dual ion beam ballistic alloying process
EP0502634B1 (en) * 1991-03-07 1997-04-09 Minnesota Mining And Manufacturing Company A polymer with crosslinked surface zones
US5316969A (en) * 1992-12-21 1994-05-31 Board Of Trustees Of The Leland Stanford Junior University Method of shallow junction formation in semiconductor devices using gas immersion laser doping

Also Published As

Publication number Publication date
CA2186102A1 (en) 1996-08-01
JPH09511028A (en) 1997-11-04
AU4965896A (en) 1996-08-14
EP0757598A1 (en) 1997-02-12
EP0757598A4 (en) 2001-03-14
WO1996022841A1 (en) 1996-08-01

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