DE69610970T2 - Halbleiterbauelement mit Bipolarstruktur und dessen Herstellungsverfahren - Google Patents

Halbleiterbauelement mit Bipolarstruktur und dessen Herstellungsverfahren

Info

Publication number
DE69610970T2
DE69610970T2 DE69610970T DE69610970T DE69610970T2 DE 69610970 T2 DE69610970 T2 DE 69610970T2 DE 69610970 T DE69610970 T DE 69610970T DE 69610970 T DE69610970 T DE 69610970T DE 69610970 T2 DE69610970 T2 DE 69610970T2
Authority
DE
Germany
Prior art keywords
production process
semiconductor component
bipolar structure
bipolar
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69610970T
Other languages
English (en)
Other versions
DE69610970D1 (de
Inventor
Hideki Takahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of DE69610970D1 publication Critical patent/DE69610970D1/de
Publication of DE69610970T2 publication Critical patent/DE69610970T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
    • H01L29/66333—Vertical insulated gate bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
    • H01L29/66333—Vertical insulated gate bipolar transistors
    • H01L29/66348—Vertical insulated gate bipolar transistors with a recessed gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Thyristors (AREA)
  • Electrodes Of Semiconductors (AREA)
DE69610970T 1995-12-11 1996-07-10 Halbleiterbauelement mit Bipolarstruktur und dessen Herstellungsverfahren Expired - Fee Related DE69610970T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP32189895A JP3325752B2 (ja) 1995-12-11 1995-12-11 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
DE69610970D1 DE69610970D1 (de) 2000-12-21
DE69610970T2 true DE69610970T2 (de) 2001-06-28

Family

ID=18137642

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69610970T Expired - Fee Related DE69610970T2 (de) 1995-12-11 1996-07-10 Halbleiterbauelement mit Bipolarstruktur und dessen Herstellungsverfahren

Country Status (4)

Country Link
EP (1) EP0779662B1 (de)
JP (1) JP3325752B2 (de)
KR (1) KR100221800B1 (de)
DE (1) DE69610970T2 (de)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7777249B2 (en) 2007-01-23 2010-08-17 Mitsubishi Electric Corporation Semiconductor device with enhanced switching speed and method for manufacturing the same
DE102005021249B4 (de) * 2004-05-13 2012-04-19 Mitsubishi Denki K.K. Halbleitervorrichtung
US8742474B2 (en) 2007-07-10 2014-06-03 Mitsubishi Electric Corporation Power semiconductor device having an active region and an electric field reduction region

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6239466B1 (en) 1998-12-04 2001-05-29 General Electric Company Insulated gate bipolar transistor for zero-voltage switching
DE10001128C1 (de) * 2000-01-13 2001-09-27 Infineon Technologies Ag Halbleiterbauelement
JP4904625B2 (ja) * 2001-02-14 2012-03-28 富士電機株式会社 半導体装置
DE10207522B4 (de) 2001-02-23 2018-08-02 Fuji Electric Co., Ltd. Halbleiterbauelement und Verfahren zu dessen Herstellung
DE102004005084B4 (de) * 2004-02-02 2013-03-14 Infineon Technologies Ag Halbleiterbauelement
JP4575713B2 (ja) * 2004-05-31 2010-11-04 三菱電機株式会社 絶縁ゲート型半導体装置
JP2006173297A (ja) * 2004-12-15 2006-06-29 Denso Corp Ｉｇｂｔ
JP2007184486A (ja) * 2006-01-10 2007-07-19 Denso Corp 半導体装置
JP5609087B2 (ja) * 2009-12-04 2014-10-22 富士電機株式会社 内燃機関点火装置用半導体装置
JP6092760B2 (ja) * 2013-12-05 2017-03-08 株式会社豊田中央研究所 縦型半導体装置
WO2017130416A1 (ja) * 2016-01-29 2017-08-03 サンケン電気株式会社 半導体装置
JP2017188569A (ja) 2016-04-06 2017-10-12 三菱電機株式会社 半導体装置およびその製造方法
CN110571264B (zh) * 2019-09-17 2023-03-24 重庆邮电大学 一种具有多通道电流栓的sa-ligbt器件
WO2023224059A1 (ja) * 2022-05-18 2023-11-23 富士電機株式会社 半導体装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59219963A (ja) * 1983-05-30 1984-12-11 Meidensha Electric Mfg Co Ltd ゲ−トタ−ンオフサイリスタ
JPH01235272A (ja) * 1988-03-15 1989-09-20 Matsushita Electric Works Ltd 半導体装置
DE59003052D1 (de) * 1989-05-18 1993-11-18 Asea Brown Boveri Halbleiterbauelement.
JP3081739B2 (ja) * 1992-10-20 2000-08-28 三菱電機株式会社 絶縁ゲート型半導体装置及びその製造方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005021249B4 (de) * 2004-05-13 2012-04-19 Mitsubishi Denki K.K. Halbleitervorrichtung
US7777249B2 (en) 2007-01-23 2010-08-17 Mitsubishi Electric Corporation Semiconductor device with enhanced switching speed and method for manufacturing the same
DE102007040587B4 (de) * 2007-01-23 2012-11-22 Mitsubishi Electric Corp. Halbleitervorrichtung und Herstellungsverfahren derselben
US8742474B2 (en) 2007-07-10 2014-06-03 Mitsubishi Electric Corporation Power semiconductor device having an active region and an electric field reduction region
DE102008008152B4 (de) * 2007-07-10 2014-11-20 Mitsubishi Electric Corp. Leistungshalbleitervorrichtung

Also Published As

Publication number Publication date
KR100221800B1 (ko) 1999-10-01
EP0779662A2 (de) 1997-06-18
EP0779662A3 (de) 1997-11-05
KR970053278A (ko) 1997-07-31
DE69610970D1 (de) 2000-12-21
JPH09162398A (ja) 1997-06-20
EP0779662B1 (de) 2000-11-15
JP3325752B2 (ja) 2002-09-17

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Legal Events

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8339 Ceased/non-payment of the annual fee