DE69609569T2 - Si enthaltende hochmolekulare Verbindung und lichtempfindliche Harzzusammensetzung - Google Patents
Si enthaltende hochmolekulare Verbindung und lichtempfindliche HarzzusammensetzungInfo
- Publication number
- DE69609569T2 DE69609569T2 DE69609569T DE69609569T DE69609569T2 DE 69609569 T2 DE69609569 T2 DE 69609569T2 DE 69609569 T DE69609569 T DE 69609569T DE 69609569 T DE69609569 T DE 69609569T DE 69609569 T2 DE69609569 T2 DE 69609569T2
- Authority
- DE
- Germany
- Prior art keywords
- resin composition
- high molecular
- photosensitive resin
- compound containing
- molecular compound
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/48—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
- C08G77/50—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms by carbon linkages
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
- C09D183/14—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Physics & Mathematics (AREA)
- Polymers & Plastics (AREA)
- Health & Medical Sciences (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Medicinal Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Wood Science & Technology (AREA)
- Silicon Polymers (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Paints Or Removers (AREA)
- Materials For Photolithography (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7133586A JP2697680B2 (ja) | 1995-05-31 | 1995-05-31 | 珪素含有高分子化合物および感光性樹脂組成物 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69609569D1 DE69609569D1 (de) | 2000-09-07 |
DE69609569T2 true DE69609569T2 (de) | 2001-04-05 |
Family
ID=15108275
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69609569T Expired - Fee Related DE69609569T2 (de) | 1995-05-31 | 1996-05-30 | Si enthaltende hochmolekulare Verbindung und lichtempfindliche Harzzusammensetzung |
Country Status (5)
Country | Link |
---|---|
US (1) | US5723257A (de) |
EP (1) | EP0745633B1 (de) |
JP (1) | JP2697680B2 (de) |
KR (1) | KR0171653B1 (de) |
DE (1) | DE69609569T2 (de) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10259707B4 (de) * | 2002-04-19 | 2009-10-29 | Mitsubishi Denki K.K. | Magnetowiderstands-Sensorvorrichtung und Verwendung in einem Fahrzeug |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR19990061090A (ko) * | 1997-12-31 | 1999-07-26 | 김영환 | 다층 레지스트 공정용 포토레지스트와 이를 이용한반도체 소자의 미세패턴 제조방법 |
JP4603634B2 (ja) * | 1998-05-12 | 2010-12-22 | 東レ・ダウコーニング株式会社 | トリハロシランからオルガノシロキサンを製造する方法 |
US6197913B1 (en) * | 1999-08-26 | 2001-03-06 | Dow Corning Corporation | Method for making microporous silicone resins with narrow pore-size distributions |
JP3965547B2 (ja) * | 1999-12-01 | 2007-08-29 | 信越化学工業株式会社 | 高分子化合物、レジスト材料及びパターン形成方法 |
US6743885B2 (en) * | 2001-07-31 | 2004-06-01 | Sumitomo Chemical Company, Limited | Resin composition for intermediate layer of three-layer resist |
US6939664B2 (en) * | 2003-10-24 | 2005-09-06 | International Business Machines Corporation | Low-activation energy silicon-containing resist system |
US7141692B2 (en) * | 2003-11-24 | 2006-11-28 | International Business Machines Corporation | Molecular photoresists containing nonpolymeric silsesquioxanes |
CN1320035C (zh) * | 2005-06-03 | 2007-06-06 | 哈尔滨工业大学 | 一种接枝改性有机硅树脂的方法 |
CN102027046B (zh) | 2008-05-16 | 2013-05-15 | 日本电气株式会社 | 有机硅化合物和用于形成二氧化硅基微粒的材料 |
US7919225B2 (en) * | 2008-05-23 | 2011-04-05 | International Business Machines Corporation | Photopatternable dielectric materials for BEOL applications and methods for use |
JP5873677B2 (ja) * | 2011-10-04 | 2016-03-01 | 株式会社カネカ | 多面体構造ポリシロキサン変性体、該変性体を含有する組成物、該組成物を硬化させてなる硬化物 |
CN106397775B (zh) * | 2016-09-08 | 2019-06-21 | 沈阳化工大学 | 一种含l-poss的耐高温硅烷交联剂及其制备方法 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5760330A (en) * | 1980-09-27 | 1982-04-12 | Fujitsu Ltd | Resin composition |
US4507384A (en) * | 1983-04-18 | 1985-03-26 | Nippon Telegraph & Telephone Public Corporation | Pattern forming material and method for forming pattern therewith |
KR900002364B1 (ko) * | 1984-05-30 | 1990-04-12 | 후지쓰가부시끼가이샤 | 패턴 형성재의 제조방법 |
JPS61144639A (ja) * | 1984-12-19 | 1986-07-02 | Hitachi Ltd | 放射線感応性組成物及びそれを用いたパタ−ン形成法 |
EP0215069B1 (de) * | 1985-03-07 | 1991-04-10 | Hughes Aircraft Company | Polysiloxanschutzlack für ionen- und elektronenstrahl-lithographie |
US4822716A (en) * | 1985-12-27 | 1989-04-18 | Kabushiki Kaisha Toshiba | Polysilanes, Polysiloxanes and silicone resist materials containing these compounds |
JPS62284352A (ja) * | 1986-06-02 | 1987-12-10 | Oki Electric Ind Co Ltd | ネガ型フォトレジスト |
US5057396A (en) * | 1988-09-22 | 1991-10-15 | Tosoh Corporation | Photosensitive material having a silicon-containing polymer |
US5059512A (en) * | 1989-10-10 | 1991-10-22 | International Business Machines Corporation | Ultraviolet light sensitive photoinitiator compositions, use thereof and radiation sensitive compositions |
US5252430A (en) * | 1989-10-25 | 1993-10-12 | Matsushita Electric Industrial Co., Ltd. | Fine pattern forming method |
JP2646289B2 (ja) * | 1990-06-01 | 1997-08-27 | 富士写真フイルム株式会社 | レジスト組成物 |
EP0464614B1 (de) * | 1990-06-25 | 1999-09-29 | Matsushita Electronics Corporation | Licht- oder strahlungsempfindliche Zusammensetzung |
JPH0458249A (ja) * | 1990-06-28 | 1992-02-25 | Oki Electric Ind Co Ltd | 感光性樹脂 |
US5338818A (en) * | 1992-09-10 | 1994-08-16 | International Business Machines Corporation | Silicon containing positive resist for DUV lithography |
-
1995
- 1995-05-31 JP JP7133586A patent/JP2697680B2/ja not_active Expired - Fee Related
-
1996
- 1996-05-30 EP EP96108666A patent/EP0745633B1/de not_active Expired - Lifetime
- 1996-05-30 DE DE69609569T patent/DE69609569T2/de not_active Expired - Fee Related
- 1996-05-31 US US08/660,183 patent/US5723257A/en not_active Expired - Fee Related
- 1996-05-31 KR KR1019960019286A patent/KR0171653B1/ko not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10259707B4 (de) * | 2002-04-19 | 2009-10-29 | Mitsubishi Denki K.K. | Magnetowiderstands-Sensorvorrichtung und Verwendung in einem Fahrzeug |
Also Published As
Publication number | Publication date |
---|---|
US5723257A (en) | 1998-03-03 |
EP0745633B1 (de) | 2000-08-02 |
JP2697680B2 (ja) | 1998-01-14 |
DE69609569D1 (de) | 2000-09-07 |
JPH08325455A (ja) | 1996-12-10 |
KR960042219A (ko) | 1996-12-21 |
EP0745633A3 (de) | 1997-08-20 |
KR0171653B1 (ko) | 1999-03-20 |
EP0745633A2 (de) | 1996-12-04 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: NEC ELECTRONICS CORP., KAWASAKI, KANAGAWA, JP |
|
8339 | Ceased/non-payment of the annual fee |