DE69609569D1 - Si enthaltende hochmolekulare Verbindung und lichtempfindliche Harzzusammensetzung - Google Patents

Si enthaltende hochmolekulare Verbindung und lichtempfindliche Harzzusammensetzung

Info

Publication number
DE69609569D1
DE69609569D1 DE69609569T DE69609569T DE69609569D1 DE 69609569 D1 DE69609569 D1 DE 69609569D1 DE 69609569 T DE69609569 T DE 69609569T DE 69609569 T DE69609569 T DE 69609569T DE 69609569 D1 DE69609569 D1 DE 69609569D1
Authority
DE
Germany
Prior art keywords
resin composition
high molecular
photosensitive resin
compound containing
molecular compound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69609569T
Other languages
English (en)
Other versions
DE69609569T2 (de
Inventor
Shigeyuki Iwasa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Electronics Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Publication of DE69609569D1 publication Critical patent/DE69609569D1/de
Application granted granted Critical
Publication of DE69609569T2 publication Critical patent/DE69609569T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/48—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
    • C08G77/50—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms by carbon linkages
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/14—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Polymers & Plastics (AREA)
  • Health & Medical Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Medicinal Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Silicon Polymers (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Paints Or Removers (AREA)
DE69609569T 1995-05-31 1996-05-30 Si enthaltende hochmolekulare Verbindung und lichtempfindliche Harzzusammensetzung Expired - Fee Related DE69609569T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7133586A JP2697680B2 (ja) 1995-05-31 1995-05-31 珪素含有高分子化合物および感光性樹脂組成物

Publications (2)

Publication Number Publication Date
DE69609569D1 true DE69609569D1 (de) 2000-09-07
DE69609569T2 DE69609569T2 (de) 2001-04-05

Family

ID=15108275

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69609569T Expired - Fee Related DE69609569T2 (de) 1995-05-31 1996-05-30 Si enthaltende hochmolekulare Verbindung und lichtempfindliche Harzzusammensetzung

Country Status (5)

Country Link
US (1) US5723257A (de)
EP (1) EP0745633B1 (de)
JP (1) JP2697680B2 (de)
KR (1) KR0171653B1 (de)
DE (1) DE69609569T2 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19990061090A (ko) * 1997-12-31 1999-07-26 김영환 다층 레지스트 공정용 포토레지스트와 이를 이용한반도체 소자의 미세패턴 제조방법
JP4603634B2 (ja) * 1998-05-12 2010-12-22 東レ・ダウコーニング株式会社 トリハロシランからオルガノシロキサンを製造する方法
US6197913B1 (en) * 1999-08-26 2001-03-06 Dow Corning Corporation Method for making microporous silicone resins with narrow pore-size distributions
JP3965547B2 (ja) * 1999-12-01 2007-08-29 信越化学工業株式会社 高分子化合物、レジスト材料及びパターン形成方法
US6743885B2 (en) * 2001-07-31 2004-06-01 Sumitomo Chemical Company, Limited Resin composition for intermediate layer of three-layer resist
JP3626469B2 (ja) * 2002-04-19 2005-03-09 三菱電機株式会社 磁気抵抗センサ装置
US6939664B2 (en) * 2003-10-24 2005-09-06 International Business Machines Corporation Low-activation energy silicon-containing resist system
US7141692B2 (en) * 2003-11-24 2006-11-28 International Business Machines Corporation Molecular photoresists containing nonpolymeric silsesquioxanes
CN1320035C (zh) * 2005-06-03 2007-06-06 哈尔滨工业大学 一种接枝改性有机硅树脂的方法
JPWO2009139462A1 (ja) * 2008-05-16 2011-09-22 日本電気株式会社 有機シリコン化合物およびシリカ系微粒子形成用材料
US7919225B2 (en) * 2008-05-23 2011-04-05 International Business Machines Corporation Photopatternable dielectric materials for BEOL applications and methods for use
JP5873677B2 (ja) * 2011-10-04 2016-03-01 株式会社カネカ 多面体構造ポリシロキサン変性体、該変性体を含有する組成物、該組成物を硬化させてなる硬化物
CN106397775B (zh) * 2016-09-08 2019-06-21 沈阳化工大学 一种含l-poss的耐高温硅烷交联剂及其制备方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5760330A (en) * 1980-09-27 1982-04-12 Fujitsu Ltd Resin composition
US4507384A (en) * 1983-04-18 1985-03-26 Nippon Telegraph & Telephone Public Corporation Pattern forming material and method for forming pattern therewith
KR900002364B1 (ko) * 1984-05-30 1990-04-12 후지쓰가부시끼가이샤 패턴 형성재의 제조방법
JPS61144639A (ja) * 1984-12-19 1986-07-02 Hitachi Ltd 放射線感応性組成物及びそれを用いたパタ−ン形成法
WO1986005284A1 (en) * 1985-03-07 1986-09-12 Hughes Aircraft Company Polysiloxane resist for ion beam and electron beam lithography
US4822716A (en) * 1985-12-27 1989-04-18 Kabushiki Kaisha Toshiba Polysilanes, Polysiloxanes and silicone resist materials containing these compounds
JPS62284352A (ja) * 1986-06-02 1987-12-10 Oki Electric Ind Co Ltd ネガ型フォトレジスト
US5057396A (en) * 1988-09-22 1991-10-15 Tosoh Corporation Photosensitive material having a silicon-containing polymer
US5059512A (en) * 1989-10-10 1991-10-22 International Business Machines Corporation Ultraviolet light sensitive photoinitiator compositions, use thereof and radiation sensitive compositions
US5252430A (en) * 1989-10-25 1993-10-12 Matsushita Electric Industrial Co., Ltd. Fine pattern forming method
JP2646289B2 (ja) * 1990-06-01 1997-08-27 富士写真フイルム株式会社 レジスト組成物
DE69131658T2 (de) * 1990-06-25 2000-04-27 Matsushita Electronics Corp Licht- oder strahlungsempfindliche Zusammensetzung
JPH0458249A (ja) * 1990-06-28 1992-02-25 Oki Electric Ind Co Ltd 感光性樹脂
US5338818A (en) * 1992-09-10 1994-08-16 International Business Machines Corporation Silicon containing positive resist for DUV lithography

Also Published As

Publication number Publication date
JPH08325455A (ja) 1996-12-10
EP0745633A3 (de) 1997-08-20
EP0745633A2 (de) 1996-12-04
KR960042219A (ko) 1996-12-21
US5723257A (en) 1998-03-03
EP0745633B1 (de) 2000-08-02
JP2697680B2 (ja) 1998-01-14
DE69609569T2 (de) 2001-04-05
KR0171653B1 (ko) 1999-03-20

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: NEC ELECTRONICS CORP., KAWASAKI, KANAGAWA, JP

8339 Ceased/non-payment of the annual fee