DE69607200D1 - Hochfrequenz-plasmaverfahren wobei das plasma durch eine induktive struktur angeregt wird in welcher die phase- und antiphasekomponenten der kapazitiven ströme zwischen der induktiven struktur und dem plasma ausgeglichen sind - Google Patents

Hochfrequenz-plasmaverfahren wobei das plasma durch eine induktive struktur angeregt wird in welcher die phase- und antiphasekomponenten der kapazitiven ströme zwischen der induktiven struktur und dem plasma ausgeglichen sind

Info

Publication number
DE69607200D1
DE69607200D1 DE69607200T DE69607200T DE69607200D1 DE 69607200 D1 DE69607200 D1 DE 69607200D1 DE 69607200 T DE69607200 T DE 69607200T DE 69607200 T DE69607200 T DE 69607200T DE 69607200 D1 DE69607200 D1 DE 69607200D1
Authority
DE
Germany
Prior art keywords
plasma
inductive structure
excited
phase
capacitive currents
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69607200T
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English (en)
Other versions
DE69607200T2 (de
Inventor
Georgy Vinogradov
Shimao Yoneyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kem Inc Tokio/tokyo Jp
Original Assignee
MC Electronics Co Ltd
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Filing date
Publication date
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First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=24266258&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE69607200(D1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by MC Electronics Co Ltd filed Critical MC Electronics Co Ltd
Publication of DE69607200D1 publication Critical patent/DE69607200D1/de
Application granted granted Critical
Publication of DE69607200T2 publication Critical patent/DE69607200T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
DE69607200T 1995-12-04 1996-10-29 Hochfrequenz-plasmaverfahren wobei das plasma durch eine induktive struktur angeregt wird in welcher die phase- und antiphasekomponenten der kapazitiven ströme zwischen der induktiven struktur und dem plasma ausgeglichen sind Expired - Lifetime DE69607200T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US56722495A 1995-12-04 1995-12-04
PCT/IB1996/001270 WO1997021332A1 (en) 1995-12-04 1996-10-29 A high-frequency plasma process wherein the plasma is excited by an inductive structure in which the phase and anti-phase portions of the capacitive currents between the inductive structure and the plasma are balanced

Publications (2)

Publication Number Publication Date
DE69607200D1 true DE69607200D1 (de) 2000-04-20
DE69607200T2 DE69607200T2 (de) 2000-11-23

Family

ID=24266258

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69607200T Expired - Lifetime DE69607200T2 (de) 1995-12-04 1996-10-29 Hochfrequenz-plasmaverfahren wobei das plasma durch eine induktive struktur angeregt wird in welcher die phase- und antiphasekomponenten der kapazitiven ströme zwischen der induktiven struktur und dem plasma ausgeglichen sind

Country Status (7)

Country Link
US (2) US5965034A (de)
EP (2) EP0865716B1 (de)
JP (2) JP2007142444A (de)
KR (1) KR100663874B1 (de)
DE (1) DE69607200T2 (de)
HK (1) HK1010633A1 (de)
WO (2) WO1997021332A1 (de)

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Also Published As

Publication number Publication date
EP0865715A4 (de) 2001-03-14
JP2010021590A (ja) 2010-01-28
WO1997021332A1 (en) 1997-06-12
US6858112B2 (en) 2005-02-22
HK1010633A1 (en) 1999-06-25
EP0865716A1 (de) 1998-09-23
KR100663874B1 (ko) 2007-06-04
KR19990071898A (ko) 1999-09-27
WO1997021330A1 (en) 1997-06-12
EP0865715A1 (de) 1998-09-23
US20030168427A1 (en) 2003-09-11
US5965034A (en) 1999-10-12
EP0865716B1 (de) 2000-03-15
JP2000501568A (ja) 2000-02-08
JP4542198B2 (ja) 2010-09-08
JP2007142444A (ja) 2007-06-07
JP4108125B2 (ja) 2008-06-25
DE69607200T2 (de) 2000-11-23

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