HK1010633A1 - A high-frequency plasma process wherein the plasma is excited by an inductive structure in which the phase and anti-phase portions of the capactive currents between the inductive structure and the plasma are balanced - Google Patents

A high-frequency plasma process wherein the plasma is excited by an inductive structure in which the phase and anti-phase portions of the capactive currents between the inductive structure and the plasma are balanced

Info

Publication number
HK1010633A1
HK1010633A1 HK98111452A HK98111452A HK1010633A1 HK 1010633 A1 HK1010633 A1 HK 1010633A1 HK 98111452 A HK98111452 A HK 98111452A HK 98111452 A HK98111452 A HK 98111452A HK 1010633 A1 HK1010633 A1 HK 1010633A1
Authority
HK
Hong Kong
Prior art keywords
plasma
phase
inductive structure
capactive
excited
Prior art date
Application number
HK98111452A
Other languages
English (en)
Inventor
Georgy Vinogradov
Shimao Yoneyama
Original Assignee
Mc Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=24266258&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=HK1010633(A1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Mc Electronics Co Ltd filed Critical Mc Electronics Co Ltd
Publication of HK1010633A1 publication Critical patent/HK1010633A1/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
HK98111452A 1995-12-04 1998-10-22 A high-frequency plasma process wherein the plasma is excited by an inductive structure in which the phase and anti-phase portions of the capactive currents between the inductive structure and the plasma are balanced HK1010633A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US56722495A 1995-12-04 1995-12-04
PCT/IB1996/001270 WO1997021332A1 (en) 1995-12-04 1996-10-29 A high-frequency plasma process wherein the plasma is excited by an inductive structure in which the phase and anti-phase portions of the capacitive currents between the inductive structure and the plasma are balanced

Publications (1)

Publication Number Publication Date
HK1010633A1 true HK1010633A1 (en) 1999-06-25

Family

ID=24266258

Family Applications (1)

Application Number Title Priority Date Filing Date
HK98111452A HK1010633A1 (en) 1995-12-04 1998-10-22 A high-frequency plasma process wherein the plasma is excited by an inductive structure in which the phase and anti-phase portions of the capactive currents between the inductive structure and the plasma are balanced

Country Status (7)

Country Link
US (2) US5965034A (xx)
EP (2) EP0865716B1 (xx)
JP (2) JP2007142444A (xx)
KR (1) KR100663874B1 (xx)
DE (1) DE69607200T2 (xx)
HK (1) HK1010633A1 (xx)
WO (2) WO1997021332A1 (xx)

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Also Published As

Publication number Publication date
EP0865715A4 (en) 2001-03-14
JP2010021590A (ja) 2010-01-28
WO1997021332A1 (en) 1997-06-12
US6858112B2 (en) 2005-02-22
EP0865716A1 (en) 1998-09-23
DE69607200D1 (de) 2000-04-20
KR100663874B1 (ko) 2007-06-04
KR19990071898A (ko) 1999-09-27
WO1997021330A1 (en) 1997-06-12
EP0865715A1 (en) 1998-09-23
US20030168427A1 (en) 2003-09-11
US5965034A (en) 1999-10-12
EP0865716B1 (en) 2000-03-15
JP2000501568A (ja) 2000-02-08
JP4542198B2 (ja) 2010-09-08
JP2007142444A (ja) 2007-06-07
JP4108125B2 (ja) 2008-06-25
DE69607200T2 (de) 2000-11-23

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