KR960012358A - 고주파수 고전력 유도 결합 플라즈마에 의한 잔류물이 남지않는 고속 금속 에칭방법 - Google Patents

고주파수 고전력 유도 결합 플라즈마에 의한 잔류물이 남지않는 고속 금속 에칭방법 Download PDF

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Publication number
KR960012358A
KR960012358A KR1019950030917A KR19950030917A KR960012358A KR 960012358 A KR960012358 A KR 960012358A KR 1019950030917 A KR1019950030917 A KR 1019950030917A KR 19950030917 A KR19950030917 A KR 19950030917A KR 960012358 A KR960012358 A KR 960012358A
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KR
South Korea
Prior art keywords
etching method
inductively coupled
coupled plasma
metal etching
residues left
Prior art date
Application number
KR1019950030917A
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English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of KR960012358A publication Critical patent/KR960012358A/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1019950030917A 1994-09-16 1995-09-16 고주파수 고전력 유도 결합 플라즈마에 의한 잔류물이 남지않는 고속 금속 에칭방법 KR960012358A (ko)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/307,870 US5783101A (en) 1994-09-16 1994-09-16 High etch rate residue free metal etch process with low frequency high power inductive coupled plasma

Publications (1)

Publication Number Publication Date
KR960012358A true KR960012358A (ko) 1996-04-20

Family

ID=23191520

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950030917A KR960012358A (ko) 1994-09-16 1995-09-16 고주파수 고전력 유도 결합 플라즈마에 의한 잔류물이 남지않는 고속 금속 에칭방법

Country Status (5)

Country Link
US (1) US5783101A (ko)
EP (1) EP0702391B1 (ko)
JP (1) JPH08172082A (ko)
KR (1) KR960012358A (ko)
DE (1) DE69513758T2 (ko)

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US6063233A (en) 1991-06-27 2000-05-16 Applied Materials, Inc. Thermal control apparatus for inductively coupled RF plasma reactor having an overhead solenoidal antenna
US6165311A (en) 1991-06-27 2000-12-26 Applied Materials, Inc. Inductively coupled RF plasma reactor having an overhead solenoidal antenna
US6514376B1 (en) 1991-06-27 2003-02-04 Applied Materials Inc. Thermal control apparatus for inductively coupled RF plasma reactor having an overhead solenoidal antenna
US6036877A (en) * 1991-06-27 2000-03-14 Applied Materials, Inc. Plasma reactor with heated source of a polymer-hardening precursor material
US6077384A (en) 1994-08-11 2000-06-20 Applied Materials, Inc. Plasma reactor having an inductive antenna coupling power through a parallel plate electrode
US6074512A (en) 1991-06-27 2000-06-13 Applied Materials, Inc. Inductively coupled RF plasma reactor having an overhead solenoidal antenna and modular confinement magnet liners
US6488807B1 (en) 1991-06-27 2002-12-03 Applied Materials, Inc. Magnetic confinement in a plasma reactor having an RF bias electrode
US7174352B2 (en) * 1993-06-03 2007-02-06 Network Appliance, Inc. File system image transfer
US5779926A (en) * 1994-09-16 1998-07-14 Applied Materials, Inc. Plasma process for etching multicomponent alloys
US6270617B1 (en) * 1995-02-15 2001-08-07 Applied Materials, Inc. RF plasma reactor with hybrid conductor and multi-radius dome ceiling
US5710486A (en) * 1995-05-08 1998-01-20 Applied Materials, Inc. Inductively and multi-capacitively coupled plasma reactor
US6716769B1 (en) 1995-06-02 2004-04-06 Micron Technology, Inc. Use of a plasma source to form a layer during the formation of a semiconductor device
US7294578B1 (en) * 1995-06-02 2007-11-13 Micron Technology, Inc. Use of a plasma source to form a layer during the formation of a semiconductor device
TW279240B (en) 1995-08-30 1996-06-21 Applied Materials Inc Parallel-plate icp source/rf bias electrode head
US6054013A (en) * 1996-02-02 2000-04-25 Applied Materials, Inc. Parallel plate electrode plasma reactor having an inductive antenna and adjustable radial distribution of plasma ion density
US6036878A (en) 1996-02-02 2000-03-14 Applied Materials, Inc. Low density high frequency process for a parallel-plate electrode plasma reactor having an inductive antenna
US6090717A (en) * 1996-03-26 2000-07-18 Lam Research Corporation High density plasma etching of metallization layer using chlorine and nitrogen
US6008139A (en) * 1996-06-17 1999-12-28 Applied Materials Inc. Method of etching polycide structures
US5849641A (en) * 1997-03-19 1998-12-15 Lam Research Corporation Methods and apparatus for etching a conductive layer to improve yield
US6087266A (en) * 1997-06-27 2000-07-11 Lam Research Corporation Methods and apparatus for improving microloading while etching a substrate
US6132551A (en) * 1997-09-20 2000-10-17 Applied Materials, Inc. Inductive RF plasma reactor with overhead coil and conductive laminated RF window beneath the overhead coil
JPH11176805A (ja) * 1997-11-14 1999-07-02 Siemens Ag 半導体装置の製造方法
US6028285A (en) * 1997-11-19 2000-02-22 Board Of Regents, The University Of Texas System High density plasma source for semiconductor processing
US6399507B1 (en) * 1999-09-22 2002-06-04 Applied Materials, Inc. Stable plasma process for etching of films
US6898561B1 (en) 1999-12-21 2005-05-24 Integrated Device Technology, Inc. Methods, apparatus and computer program products for modeling integrated circuit devices having reduced linewidths
US6401652B1 (en) 2000-05-04 2002-06-11 Applied Materials, Inc. Plasma reactor inductive coil antenna with flat surface facing the plasma
KR100457740B1 (ko) * 2002-01-09 2004-11-18 매그나칩 반도체 유한회사 반도체소자의 다층 금속배선 형성방법
JP3974465B2 (ja) * 2002-07-10 2007-09-12 Ｎｅｃエレクトロニクス株式会社 ポリマー除去方法
US7008877B2 (en) * 2003-05-05 2006-03-07 Unaxis Usa Inc. Etching of chromium layers on photomasks utilizing high density plasma and low frequency RF bias
US7208420B1 (en) 2004-07-22 2007-04-24 Lam Research Corporation Method for selectively etching an aluminum containing layer
AU2006224282B2 (en) 2005-02-28 2012-02-02 Sulzer Metco Ag System and process for high-density,low-energy plasma enhanced vapor phase epitaxy
CN104241070A (zh) * 2013-06-24 2014-12-24 中微半导体设备(上海)有限公司 用于感应耦合等离子体腔室的气体注入装置
US12074390B2 (en) 2022-11-11 2024-08-27 Tokyo Electron Limited Parallel resonance antenna for radial plasma control

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Publication number Priority date Publication date Assignee Title
US4253907A (en) * 1979-03-28 1981-03-03 Western Electric Company, Inc. Anisotropic plasma etching
US4505782A (en) * 1983-03-25 1985-03-19 Lfe Corporation Plasma reactive ion etching of aluminum and aluminum alloys
US4464223A (en) * 1983-10-03 1984-08-07 Tegal Corp. Plasma reactor apparatus and method
US4490209B2 (en) * 1983-12-27 2000-12-19 Texas Instruments Inc Plasma etching using hydrogen bromide addition
US4680086A (en) * 1986-03-20 1987-07-14 Motorola, Inc. Dry etching of multi-layer structures
US4717448A (en) * 1986-10-09 1988-01-05 International Business Machines Corporation Reactive ion etch chemistry for providing deep vertical trenches in semiconductor substrates
GB8629634D0 (en) * 1986-12-11 1987-01-21 Dobson C D Reactive ion & sputter etching
US4832787A (en) * 1988-02-19 1989-05-23 International Business Machines Corporation Gas mixture and method for anisotropic selective etch of nitride
US5122251A (en) * 1989-06-13 1992-06-16 Plasma & Materials Technologies, Inc. High density plasma deposition and etching apparatus
US5346578A (en) * 1992-11-04 1994-09-13 Novellus Systems, Inc. Induction plasma source

Also Published As

Publication number Publication date
JPH08172082A (ja) 1996-07-02
US5783101A (en) 1998-07-21
DE69513758T2 (de) 2000-07-06
EP0702391A3 (en) 1996-09-25
EP0702391A2 (en) 1996-03-20
DE69513758D1 (de) 2000-01-13
EP0702391B1 (en) 1999-12-08

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