DE69605023D1 - Integrierte steuerschaltung für halbbrückenschaltung - Google Patents

Integrierte steuerschaltung für halbbrückenschaltung

Info

Publication number
DE69605023D1
DE69605023D1 DE69605023T DE69605023T DE69605023D1 DE 69605023 D1 DE69605023 D1 DE 69605023D1 DE 69605023 T DE69605023 T DE 69605023T DE 69605023 T DE69605023 T DE 69605023T DE 69605023 D1 DE69605023 D1 DE 69605023D1
Authority
DE
Germany
Prior art keywords
integrated control
half bridge
circuit
control circuit
bridge circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69605023T
Other languages
English (en)
Other versions
DE69605023T2 (de
Inventor
Anand Janaswamy
Rajsekhar Jayaraman
Michael Amato
Paul Veldman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Publication of DE69605023D1 publication Critical patent/DE69605023D1/de
Application granted granted Critical
Publication of DE69605023T2 publication Critical patent/DE69605023T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/217—Class D power amplifiers; Switching amplifiers
    • H03F3/2171—Class D power amplifiers; Switching amplifiers with field-effect devices
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
    • H02M7/538—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a push-pull configuration
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/06—Modifications for ensuring a fully conducting state
    • H03K17/063—Modifications for ensuring a fully conducting state in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K2017/6875—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors using self-conductive, depletion FETs
DE69605023T 1995-12-27 1996-12-05 Integrierte steuerschaltung für halbbrückenschaltung Expired - Fee Related DE69605023T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/579,654 US5666280A (en) 1993-05-07 1995-12-27 High voltage integrated circuit driver for half-bridge circuit employing a jet to emulate a bootstrap diode
PCT/IB1996/001358 WO1997024794A2 (en) 1995-12-27 1996-12-05 Integrated driver for half-bridge circuit

Publications (2)

Publication Number Publication Date
DE69605023D1 true DE69605023D1 (de) 1999-12-09
DE69605023T2 DE69605023T2 (de) 2000-11-23

Family

ID=24317797

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69605023T Expired - Fee Related DE69605023T2 (de) 1995-12-27 1996-12-05 Integrierte steuerschaltung für halbbrückenschaltung

Country Status (6)

Country Link
US (1) US5666280A (de)
EP (1) EP0812488B1 (de)
JP (1) JPH11501500A (de)
CN (1) CN1056948C (de)
DE (1) DE69605023T2 (de)
WO (1) WO1997024794A2 (de)

Families Citing this family (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5805433A (en) * 1996-04-18 1998-09-08 International Rectifier Corporation Small offline power supply
JP2005501499A (ja) * 2001-08-28 2005-01-13 コーニンクレッカ　フィリップス　エレクトロニクス　エヌ　ヴィ ハーフブリッジ回路
DE10147882B4 (de) * 2001-09-28 2005-06-23 Infineon Technologies Ag Halbbrückenschaltung und Verfahren zu deren Ansteuerung
US6529034B1 (en) * 2001-11-07 2003-03-04 International Rectifier Corporation Integrated series schottky and FET to allow negative drain voltage
CN1402416A (zh) * 2001-12-03 2003-03-12 方虎堂 零电压转换数字功率变换器
SE0104400D0 (sv) * 2001-12-21 2001-12-21 Bang & Olufsen Powerhouse As Half-bridge driver and power conversion system with such driver
US6897492B2 (en) * 2002-02-04 2005-05-24 Ixys Corporation Power device with bi-directional level shift circuit
US6759692B1 (en) * 2002-02-04 2004-07-06 Ixys Corporation Gate driver with level shift circuit
JP2003244966A (ja) * 2002-02-18 2003-08-29 Mitsubishi Electric Corp 駆動回路
US6891739B2 (en) * 2002-03-04 2005-05-10 International Rectifier Corporation H-bridge with power switches and control in a single package
US6643145B1 (en) * 2002-07-26 2003-11-04 Intersil Americas Inc. High resolution digital diode emulator for DC-DC converters
US7019502B2 (en) 2002-09-06 2006-03-28 Intersil America's Inc. Synchronization of multiphase synthetic ripple voltage regulator
KR100894320B1 (ko) * 2003-03-24 2009-04-24 페어차일드코리아반도체 주식회사 고전압 집적 회로에 의해 게이트가 구동되는 스위칭소자를 포함하는 인버터 회로
ATE490597T1 (de) * 2003-07-04 2010-12-15 Dialog Semiconductor Gmbh Hochspannungschnittstelle und steuerschaltung dafür
TW200525869A (en) 2004-01-28 2005-08-01 Renesas Tech Corp Switching power supply and semiconductor IC
US7187226B2 (en) * 2004-07-01 2007-03-06 Analog Devices, Inc. Anti-cross conduction drive control circuit and method
US7106105B2 (en) * 2004-07-21 2006-09-12 Fairchild Semiconductor Corporation High voltage integrated circuit driver with a high voltage PMOS bootstrap diode emulator
DE102004041927B4 (de) * 2004-08-30 2013-11-21 Infineon Technologies Ag Schaltungsanordnung mit einem Pegelumsetzer und einem Spannungsregler
DE102005040062A1 (de) * 2005-08-24 2007-03-01 Tridonicatco Gmbh & Co. Kg Schaltungsanordnung und Verfahren zum Erzeugen von Steuersignalen für auf einem hohen Bezugspotential liegende Komponenten
JP4675302B2 (ja) * 2006-09-25 2011-04-20 三菱電機株式会社 半導体装置
CN101247080B (zh) * 2007-02-16 2011-05-11 立锜科技股份有限公司 对电压转换器的自举电容充电的电路
GB2460066B (en) * 2008-05-15 2010-08-11 Siemens Ag A pulse width modulated voltage source and method
US8149027B2 (en) * 2008-07-02 2012-04-03 Motorola Mobility, Inc. Circuit with a voltage dependent resistor for controlling an on/off state of a transistor
CN101630956B (zh) * 2009-08-17 2011-07-20 浙江大学 一种采用启动带电路的nmos功率开关管驱动电路
JP5488256B2 (ja) * 2010-06-25 2014-05-14 三菱電機株式会社 電力用半導体装置
EP3090838B1 (de) 2011-05-19 2020-06-17 Black & Decker Inc. Elektrowerkzeug mit kraftsensorelektrokupplung
JP5236822B1 (ja) * 2012-01-30 2013-07-17 シャープ株式会社 ドライバ回路
CN102684457B (zh) * 2012-05-15 2014-10-22 上海先进半导体制造股份有限公司 高压桥式电路及其制作方法
JP5510564B2 (ja) * 2012-05-25 2014-06-04 日本電気株式会社 スイッチングアンプおよびそれを用いた送信機
CN104143903B (zh) * 2013-05-06 2016-12-28 立锜科技股份有限公司 电源转换电路的控制信号产生电路和相关的逻辑重生电路
EP3010042B1 (de) 2013-06-14 2020-04-15 Fuji Electric Co., Ltd. Halbleiterbauelement
CN104426359B (zh) * 2013-09-06 2018-07-06 上海宝芯源功率半导体有限公司 一种集成结型场效应晶体管的自举电路及自举方法
JP6228428B2 (ja) * 2013-10-30 2017-11-08 ルネサスエレクトロニクス株式会社 半導体装置
TWI563795B (en) 2014-03-13 2016-12-21 Upi Semiconductor Corp Gate driver and control method thereof
JP6527449B2 (ja) * 2015-10-23 2019-06-05 株式会社アイ・ライティング・システム ドライブ回路
US10277224B2 (en) 2016-12-14 2019-04-30 Mosway Technologies Limited Bootstrap diode emulator circuit
TWI608592B (zh) 2017-01-25 2017-12-11 新唐科技股份有限公司 半導體裝置
US10608501B2 (en) 2017-05-24 2020-03-31 Black & Decker Inc. Variable-speed input unit having segmented pads for a power tool
CN107800281A (zh) * 2017-10-27 2018-03-13 东南大学 用于高压半桥栅驱动电路的自举电路及驱动电路
US10536070B1 (en) 2018-08-01 2020-01-14 Infineon Technologies Ag Driver for switching gallium nitride (GaN) devices
JP7162505B2 (ja) * 2018-11-22 2022-10-28 三菱電機株式会社 半導体装置
US11502675B2 (en) * 2019-02-07 2022-11-15 Rohm Co., Ltd. Switch driving device
JP7034119B2 (ja) 2019-05-20 2022-03-11 三菱電機株式会社 半導体装置及びその駆動方法
JP7388317B2 (ja) * 2020-08-27 2023-11-29 三菱電機株式会社 駆動回路およびインバータ装置
TW202401962A (zh) * 2022-06-29 2024-01-01 美商高效電源轉換公司 通用功率場效電晶體(fet)驅動器積體電路(ic)架構

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4633381A (en) * 1985-02-26 1986-12-30 Sundstrand Corporation Inverter shoot-through protection circuit
US4594649A (en) * 1985-03-01 1986-06-10 Ncr Corporation Bootstrap drive for a two-transistor forward converter
JPS61277223A (ja) * 1985-06-03 1986-12-08 Mitsubishi Electric Corp 半導体モジユ−ル
US4685040A (en) * 1985-12-06 1987-08-04 General Electric Company Integrated circuit for controlling power converter by frequency modulation and pulse width modulation
US4740717A (en) * 1986-11-25 1988-04-26 North American Philips Corporation, Signetics Division Switching device with dynamic hysteresis
NL8702847A (nl) * 1987-11-27 1989-06-16 Philips Nv Dc-ac brugschakeling.
US4989127A (en) * 1989-05-09 1991-01-29 North American Philips Corporation Driver for high voltage half-bridge circuits
US5365118A (en) * 1992-06-04 1994-11-15 Linear Technology Corp. Circuit for driving two power mosfets in a half-bridge configuration
US5408150A (en) * 1992-06-04 1995-04-18 Linear Technology Corporation Circuit for driving two power mosfets in a half-bridge configuration
US5408403A (en) * 1992-08-25 1995-04-18 General Electric Company Power supply circuit with power factor correction
CA2104737C (en) * 1992-08-26 1997-01-28 Minoru Maehara Inverter device
US5502632A (en) * 1993-05-07 1996-03-26 Philips Electronics North America Corporation High voltage integrated circuit driver for half-bridge circuit employing a bootstrap diode emulator
US5373435A (en) * 1993-05-07 1994-12-13 Philips Electronics North America Corporation High voltage integrated circuit driver for half-bridge circuit employing a bootstrap diode emulator
JPH07245955A (ja) * 1994-03-02 1995-09-19 Yutaka Denki Seisakusho:Kk 力率改善型安定化電源回路および無停電電源回路
EP0743752B1 (de) * 1995-05-17 2004-07-28 STMicroelectronics S.r.l. Laden eines Bootstrap-Kondensators mittels eines lateralen DMOS-Transistors
DE69502093T2 (de) * 1995-06-30 1998-10-08 Sgs Thomson Microelectronics Versorgungsspannungsregler für Bootstrapleitung ohne Filterkondensator

Also Published As

Publication number Publication date
CN1181848A (zh) 1998-05-13
EP0812488A2 (de) 1997-12-17
WO1997024794A2 (en) 1997-07-10
WO1997024794A3 (en) 1997-08-21
CN1056948C (zh) 2000-09-27
JPH11501500A (ja) 1999-02-02
US5666280A (en) 1997-09-09
EP0812488B1 (de) 1999-11-03
DE69605023T2 (de) 2000-11-23

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee