DE69604089T2 - Verfahren zur herstellung von metallquanteninseln - Google Patents
Verfahren zur herstellung von metallquanteninselnInfo
- Publication number
- DE69604089T2 DE69604089T2 DE69604089T DE69604089T DE69604089T2 DE 69604089 T2 DE69604089 T2 DE 69604089T2 DE 69604089 T DE69604089 T DE 69604089T DE 69604089 T DE69604089 T DE 69604089T DE 69604089 T2 DE69604089 T2 DE 69604089T2
- Authority
- DE
- Germany
- Prior art keywords
- solution
- metal
- droplets
- chamber
- particles
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 229910052751 metal Inorganic materials 0.000 title claims description 22
- 239000002184 metal Substances 0.000 title claims description 22
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- VLCQZHSMCYCDJL-UHFFFAOYSA-N tribenuron methyl Chemical compound COC(=O)C1=CC=CC=C1S(=O)(=O)NC(=O)N(C)C1=NC(C)=NC(OC)=N1 VLCQZHSMCYCDJL-UHFFFAOYSA-N 0.000 title 1
- 239000002245 particle Substances 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 22
- 239000000758 substrate Substances 0.000 claims description 13
- 239000002904 solvent Substances 0.000 claims description 9
- 229920000642 polymer Polymers 0.000 claims description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 150000003839 salts Chemical class 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 2
- 230000008021 deposition Effects 0.000 claims description 2
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 125000002091 cationic group Chemical group 0.000 claims 2
- 239000011261 inert gas Substances 0.000 claims 2
- 230000005684 electric field Effects 0.000 claims 1
- 229910044991 metal oxide Inorganic materials 0.000 claims 1
- 150000004706 metal oxides Chemical class 0.000 claims 1
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 24
- 239000000443 aerosol Substances 0.000 description 14
- 239000002923 metal particle Substances 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 5
- 229920000388 Polyphosphate Polymers 0.000 description 4
- 239000001205 polyphosphate Substances 0.000 description 4
- 235000011176 polyphosphates Nutrition 0.000 description 4
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 description 4
- 239000003381 stabilizer Substances 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 229920000620 organic polymer Polymers 0.000 description 3
- 239000007921 spray Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000005291 magnetic effect Effects 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 229910001961 silver nitrate Inorganic materials 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- 101100346656 Drosophila melanogaster strat gene Proteins 0.000 description 1
- 229910001111 Fine metal Inorganic materials 0.000 description 1
- 229910002651 NO3 Inorganic materials 0.000 description 1
- 229910021586 Nickel(II) chloride Inorganic materials 0.000 description 1
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- UFMZWBIQTDUYBN-UHFFFAOYSA-N cobalt dinitrate Chemical compound [Co+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O UFMZWBIQTDUYBN-UHFFFAOYSA-N 0.000 description 1
- 229910001981 cobalt nitrate Inorganic materials 0.000 description 1
- 229910000428 cobalt oxide Inorganic materials 0.000 description 1
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005294 ferromagnetic effect Effects 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 229940005740 hexametaphosphate Drugs 0.000 description 1
- 229920000592 inorganic polymer Polymers 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- MVFCKEFYUDZOCX-UHFFFAOYSA-N iron(2+);dinitrate Chemical compound [Fe+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O MVFCKEFYUDZOCX-UHFFFAOYSA-N 0.000 description 1
- 230000005499 meniscus Effects 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000693 micelle Substances 0.000 description 1
- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical compound Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 description 1
- KBJMLQFLOWQJNF-UHFFFAOYSA-N nickel(ii) nitrate Chemical compound [Ni+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O KBJMLQFLOWQJNF-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920002689 polyvinyl acetate Polymers 0.000 description 1
- 239000011118 polyvinyl acetate Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000779 smoke Substances 0.000 description 1
- GCLGEJMYGQKIIW-UHFFFAOYSA-H sodium hexametaphosphate Chemical compound [Na]OP1(=O)OP(=O)(O[Na])OP(=O)(O[Na])OP(=O)(O[Na])OP(=O)(O[Na])OP(=O)(O[Na])O1 GCLGEJMYGQKIIW-UHFFFAOYSA-H 0.000 description 1
- 235000019982 sodium hexametaphosphate Nutrition 0.000 description 1
- 235000019830 sodium polyphosphate Nutrition 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000001577 tetrasodium phosphonato phosphate Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 150000003573 thiols Chemical class 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F9/00—Making metallic powder or suspensions thereof
- B22F9/16—Making metallic powder or suspensions thereof using chemical processes
- B22F9/30—Making metallic powder or suspensions thereof using chemical processes with decomposition of metal compounds, e.g. by pyrolysis
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4486—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by producing an aerosol and subsequent evaporation of the droplets or particles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/483—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using coherent light, UV to IR, e.g. lasers
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/355—Non-linear optics characterised by the materials used
- G02F1/3556—Semiconductor materials, e.g. quantum wells
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Nonlinear Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Nanotechnology (AREA)
- Biophysics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Dispersion Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Manufacture Of Metal Powder And Suspensions Thereof (AREA)
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Chemically Coating (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GBGB9515439.9A GB9515439D0 (en) | 1995-07-27 | 1995-07-27 | Method of producing metal quantum dots |
| PCT/GB1996/001853 WO1997004906A1 (en) | 1995-07-27 | 1996-07-29 | Method of producing metal quantum dots |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69604089D1 DE69604089D1 (de) | 1999-10-07 |
| DE69604089T2 true DE69604089T2 (de) | 1999-12-23 |
Family
ID=10778372
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69604089T Expired - Fee Related DE69604089T2 (de) | 1995-07-27 | 1996-07-29 | Verfahren zur herstellung von metallquanteninseln |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US5965212A (enExample) |
| EP (1) | EP0871557B1 (enExample) |
| JP (1) | JPH11510314A (enExample) |
| DE (1) | DE69604089T2 (enExample) |
| ES (1) | ES2137720T3 (enExample) |
| GB (1) | GB9515439D0 (enExample) |
| WO (1) | WO1997004906A1 (enExample) |
Families Citing this family (41)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3012547B2 (ja) * | 1997-02-25 | 2000-02-21 | 日本ビクター株式会社 | 光記録媒体及びその製造方法 |
| US7294366B2 (en) * | 1998-09-30 | 2007-11-13 | Optomec Design Company | Laser processing for heat-sensitive mesoscale deposition |
| US7045015B2 (en) | 1998-09-30 | 2006-05-16 | Optomec Design Company | Apparatuses and method for maskless mesoscale material deposition |
| US8110247B2 (en) | 1998-09-30 | 2012-02-07 | Optomec Design Company | Laser processing for heat-sensitive mesoscale deposition of oxygen-sensitive materials |
| US20050156991A1 (en) * | 1998-09-30 | 2005-07-21 | Optomec Design Company | Maskless direct write of copper using an annular aerosol jet |
| US20040197493A1 (en) * | 1998-09-30 | 2004-10-07 | Optomec Design Company | Apparatus, methods and precision spray processes for direct write and maskless mesoscale material deposition |
| US7938079B2 (en) | 1998-09-30 | 2011-05-10 | Optomec Design Company | Annular aerosol jet deposition using an extended nozzle |
| US7108894B2 (en) * | 1998-09-30 | 2006-09-19 | Optomec Design Company | Direct Write™ System |
| US6179912B1 (en) | 1999-12-20 | 2001-01-30 | Biocrystal Ltd. | Continuous flow process for production of semiconductor nanocrystals |
| US20030106488A1 (en) * | 2001-12-10 | 2003-06-12 | Wen-Chiang Huang | Manufacturing method for semiconductor quantum particles |
| KR100682886B1 (ko) | 2003-12-18 | 2007-02-15 | 삼성전자주식회사 | 나노입자의 제조방법 |
| US7405002B2 (en) * | 2004-08-04 | 2008-07-29 | Agency For Science, Technology And Research | Coated water-soluble nanoparticles comprising semiconductor core and silica coating |
| US7534489B2 (en) * | 2004-09-24 | 2009-05-19 | Agency For Science, Technology And Research | Coated composites of magnetic material and quantum dots |
| US20060280866A1 (en) * | 2004-10-13 | 2006-12-14 | Optomec Design Company | Method and apparatus for mesoscale deposition of biological materials and biomaterials |
| JP4467568B2 (ja) * | 2004-10-21 | 2010-05-26 | Ｈｏｙａ株式会社 | 微粒子堆積装置及び微粒子堆積物製造方法 |
| US20060127931A1 (en) * | 2004-11-15 | 2006-06-15 | Bradley Schmidt | Particle detector with waveguide light confinement |
| US7938341B2 (en) | 2004-12-13 | 2011-05-10 | Optomec Design Company | Miniature aerosol jet and aerosol jet array |
| US7674671B2 (en) | 2004-12-13 | 2010-03-09 | Optomec Design Company | Aerodynamic jetting of aerosolized fluids for fabrication of passive structures |
| US7309642B2 (en) * | 2005-11-09 | 2007-12-18 | Hewlett-Packard Development Company, L.P. | Metallic quantum dots fabricated by a superlattice structure |
| US8167972B2 (en) | 2006-06-30 | 2012-05-01 | N.E. Chemcat Corporation | Process for producing metal nanoparticle and metal nanoparticle produced by the process |
| DE102006033037A1 (de) * | 2006-07-14 | 2008-01-24 | Universität Bielefeld | Einstufiges Verfahren zur Aufbringung einer Metallschicht auf ein Substrat |
| US7829162B2 (en) | 2006-08-29 | 2010-11-09 | international imagining materials, inc | Thermal transfer ribbon |
| WO2008063658A2 (en) | 2006-11-21 | 2008-05-29 | Qd Vision, Inc. | Semiconductor nanocrystals and compositions and devices including same |
| WO2008063652A1 (en) | 2006-11-21 | 2008-05-29 | Qd Vision, Inc. | Blue emitting semiconductor nanocrystals and compositions and devices including same |
| WO2008063653A1 (en) | 2006-11-21 | 2008-05-29 | Qd Vision, Inc. | Semiconductor nanocrystals and compositions and devices including same |
| DE102006060366B8 (de) * | 2006-12-16 | 2013-08-01 | Helmholtz-Zentrum Berlin Für Materialien Und Energie Gmbh | Verfahren zur Herstellung von von einer Matrix abgedeckten Quantenpunkten |
| TWI482662B (zh) | 2007-08-30 | 2015-05-01 | Optomec Inc | 機械上一體式及緊密式耦合之列印頭以及噴霧源 |
| TWI538737B (zh) | 2007-08-31 | 2016-06-21 | 阿普托麥克股份有限公司 | 材料沉積總成 |
| US8887658B2 (en) | 2007-10-09 | 2014-11-18 | Optomec, Inc. | Multiple sheath multiple capillary aerosol jet |
| KR100981309B1 (ko) | 2007-12-06 | 2010-09-10 | 한국세라믹기술원 | 양자점 재료 증착박막 형성방법 및 그 생성물 |
| CN101279373B (zh) * | 2007-12-28 | 2010-05-19 | 天津大学 | 一种二次库仑分裂制备纳米颗粒的装置 |
| KR101995371B1 (ko) | 2008-04-03 | 2019-07-02 | 삼성 리서치 아메리카 인코포레이티드 | 양자점들을 포함하는 발광 소자 |
| US9525148B2 (en) | 2008-04-03 | 2016-12-20 | Qd Vision, Inc. | Device including quantum dots |
| US8816479B2 (en) | 2008-06-17 | 2014-08-26 | National Research Council Of Canada | Atomistic quantum dot |
| US8064059B2 (en) * | 2008-11-04 | 2011-11-22 | Alipasha Vaziri | Optical pulse duration measurement |
| US10994473B2 (en) | 2015-02-10 | 2021-05-04 | Optomec, Inc. | Fabrication of three dimensional structures by in-flight curing of aerosols |
| US10632746B2 (en) | 2017-11-13 | 2020-04-28 | Optomec, Inc. | Shuttering of aerosol streams |
| CN111826636B (zh) * | 2020-08-21 | 2022-12-13 | 南京工程学院 | 一种同腔制造氧化锌、氧化钛或氧化镍量子点的方法及设备 |
| TW202247905A (zh) | 2021-04-29 | 2022-12-16 | 美商阿普托麥克股份有限公司 | 用於氣溶膠噴射裝置之高可靠性鞘護輸送路徑 |
| WO2023228702A1 (ja) * | 2022-05-26 | 2023-11-30 | 克弥 西沢 | 導線、伝送装置、宇宙太陽光エネルギー輸送方法 |
| CN116510756B (zh) * | 2023-04-28 | 2023-10-03 | 广东工业大学 | 一种高熵氟化物量子点纳米酶、制备方法及其生化检测应用 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4844736A (en) * | 1986-11-04 | 1989-07-04 | Idemitsu Kosan Co., Ltd. | Method for the preparation of finely divided metal particles |
| GB2215122A (en) * | 1988-02-12 | 1989-09-13 | Philips Electronic Associated | A method of forming a quantum dot structure |
-
1995
- 1995-07-27 GB GBGB9515439.9A patent/GB9515439D0/en active Pending
-
1996
- 1996-07-29 WO PCT/GB1996/001853 patent/WO1997004906A1/en not_active Ceased
- 1996-07-29 JP JP9507367A patent/JPH11510314A/ja not_active Ceased
- 1996-07-29 US US09/000,272 patent/US5965212A/en not_active Expired - Fee Related
- 1996-07-29 EP EP96925896A patent/EP0871557B1/en not_active Expired - Lifetime
- 1996-07-29 DE DE69604089T patent/DE69604089T2/de not_active Expired - Fee Related
- 1996-07-29 ES ES96925896T patent/ES2137720T3/es not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| DE69604089D1 (de) | 1999-10-07 |
| ES2137720T3 (es) | 1999-12-16 |
| EP0871557A1 (en) | 1998-10-21 |
| WO1997004906A1 (en) | 1997-02-13 |
| GB9515439D0 (en) | 1995-09-27 |
| EP0871557B1 (en) | 1999-09-01 |
| US5965212A (en) | 1999-10-12 |
| JPH11510314A (ja) | 1999-09-07 |
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| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |