DE3335107C2 - - Google Patents

Info

Publication number
DE3335107C2
DE3335107C2 DE3335107A DE3335107A DE3335107C2 DE 3335107 C2 DE3335107 C2 DE 3335107C2 DE 3335107 A DE3335107 A DE 3335107A DE 3335107 A DE3335107 A DE 3335107A DE 3335107 C2 DE3335107 C2 DE 3335107C2
Authority
DE
Germany
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE3335107A
Other versions
DE3335107A1 (de
Inventor
Robert Pang Heng Warren N.J. Us Chang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
AT&T Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AT&T Technologies Inc filed Critical AT&T Technologies Inc
Publication of DE3335107A1 publication Critical patent/DE3335107A1/de
Application granted granted Critical
Publication of DE3335107C2 publication Critical patent/DE3335107C2/de
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/005—Oxydation
DE19833335107 1982-09-30 1983-09-28 Verfahren zum herstellen eines gegenstandes mit einem mehrkomponentenmaterial Granted DE3335107A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/429,289 US4483725A (en) 1982-09-30 1982-09-30 Reactive vapor deposition of multiconstituent material

Publications (2)

Publication Number Publication Date
DE3335107A1 DE3335107A1 (de) 1984-04-05
DE3335107C2 true DE3335107C2 (de) 1987-04-23

Family

ID=23702618

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19833335107 Granted DE3335107A1 (de) 1982-09-30 1983-09-28 Verfahren zum herstellen eines gegenstandes mit einem mehrkomponentenmaterial

Country Status (7)

Country Link
US (1) US4483725A (de)
JP (1) JPS5984420A (de)
CA (1) CA1209949A (de)
DE (1) DE3335107A1 (de)
FR (1) FR2533944B1 (de)
GB (1) GB2129020B (de)
NL (1) NL8303340A (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6113626A (ja) * 1984-06-29 1986-01-21 Hitachi Ltd プラズマ処理装置
DE3437120A1 (de) * 1984-10-10 1986-04-10 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zum herstellen von halbleiterschichten auf halbleiterkoerpern oder zur eindiffusion von stoerstellen im halbleiterkoerper
JPS61135126A (ja) * 1984-12-06 1986-06-23 Hitachi Ltd プラズマ処理装置
JPS628517A (ja) * 1985-07-04 1987-01-16 Matsushita Electric Ind Co Ltd 化合物薄膜の形成方法
JPS62172714A (ja) * 1986-01-25 1987-07-29 Nippon Telegr & Teleph Corp <Ntt> 化合物半導体薄膜の製造方法
KR910007382B1 (ko) * 1987-08-07 1991-09-25 가부시기가이샤 히다찌세이사꾸쇼 초전도 재료 및 초전도 박막의 제조방법
US4900591A (en) * 1988-01-20 1990-02-13 The United States Of America As Represented By The Secretary Of The Air Force Method for the deposition of high quality silicon dioxide at low temperature
US4966887A (en) * 1988-06-24 1990-10-30 The Research Foundation Of State University Of Ny Method for the production of oxide superconducting films by laser assisted molecular beam epitaxy
US5192393A (en) * 1989-05-24 1993-03-09 Hitachi, Ltd. Method for growing thin film by beam deposition and apparatus for practicing the same
JPH038331A (ja) * 1989-06-06 1991-01-16 Nec Corp 酸化シリコン形成方法及び形成装置
JPH03202461A (ja) * 1989-12-29 1991-09-04 Nissin Electric Co Ltd 高絶縁酸化ケイ素薄膜の形成方法
US5010036A (en) * 1990-04-20 1991-04-23 Eaton Corporation Low temperature semiconductor bonding process with chemical vapor reaction
US5248631A (en) * 1990-08-24 1993-09-28 Minnesota Mining And Manufacturing Company Doping of iib-via semiconductors during molecular beam epitaxy using neutral free radicals
US6953703B2 (en) * 1991-03-18 2005-10-11 The Trustees Of Boston University Method of making a semiconductor device with exposure of sapphire substrate to activated nitrogen
US5633192A (en) * 1991-03-18 1997-05-27 Boston University Method for epitaxially growing gallium nitride layers
US5398641A (en) * 1993-07-27 1995-03-21 Texas Instruments Incorporated Method for p-type doping of semiconductor structures formed of group II and group VI elements
US5386798A (en) * 1993-10-06 1995-02-07 Martin Marietta Energy Systems, Inc. Method for continuous control of composition and doping of pulsed laser deposited films
KR960704343A (ko) * 1994-06-09 1996-08-31 이데이 노부유키 질소도핑 ii-vi족 화합물반도체의 성막방법
JP3568189B2 (ja) * 1999-04-21 2004-09-22 東北パイオニア株式会社 有機ｅｌディスプレイの製造方法および装置
DE102005008889B4 (de) * 2005-02-26 2016-07-07 Leybold Optics Gmbh Optisches Monitoringsystem für Beschichtungsprozesse

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1449361A (fr) * 1964-08-28 1966-08-12 Balzers Patent Beteilig Ag Procédé pour accroître la robustesse de la liaison entre des couches minces de matière
US3551312A (en) * 1968-05-20 1970-12-29 Bell Telephone Labor Inc Vacuum evaporation deposition of group iii-a metal nitrides
US3916034A (en) * 1971-05-21 1975-10-28 Hitachi Ltd Method of transporting substances in a plasma stream to and depositing it on a target
SE393967B (sv) * 1974-11-29 1977-05-31 Sateko Oy Forfarande och for utforande av stroleggning mellan lagren i ett virkespaket
FR2294246A1 (fr) * 1974-12-13 1976-07-09 Anvar Perfectionnements aux procedes et aux dispositifs de formation de couches minces epitaxiales par condensation ionique d'un materiau formant substrat
JPS5372A (en) * 1976-06-24 1978-01-05 Agency Of Ind Science & Technol Selective doping crystal growing method
JPS5489983A (en) * 1977-12-28 1979-07-17 Toshiba Corp Device and method for vacuum deposition compound
US4217374A (en) * 1978-03-08 1980-08-12 Energy Conversion Devices, Inc. Amorphous semiconductors equivalent to crystalline semiconductors
EP0029747A1 (de) * 1979-11-27 1981-06-03 Konica Corporation Vorrichtung zum Aufdampfen im Vakuum und Verfahren zum Formen einer dünnen Schicht unter Verwendung dieser Vorrichtung
CA1159012A (en) * 1980-05-02 1983-12-20 Seitaro Matsuo Plasma deposition apparatus
GR75775B (de) * 1980-10-06 1984-08-02 Merck & Co Inc
IE53485B1 (en) * 1981-02-12 1988-11-23 Energy Conversion Devices Inc Improved photoresponsive amorphous alloys
DE3276540D1 (en) * 1981-03-26 1987-07-16 Inoue Japax Res A method of, and an apparatus for, processing a workpiece with energetic particles and a product processed thereby
JPS57171660A (en) * 1981-04-15 1982-10-22 Matsushita Electric Ind Co Ltd Method and device for vacuum deposition
GB2119278B (en) * 1982-04-13 1987-04-15 Michael Paul Neary Improvements in or relating to a chemical method

Also Published As

Publication number Publication date
FR2533944A1 (fr) 1984-04-06
DE3335107A1 (de) 1984-04-05
FR2533944B1 (fr) 1989-12-01
GB2129020B (en) 1986-04-16
GB2129020A (en) 1984-05-10
JPS5984420A (ja) 1984-05-16
GB8325881D0 (en) 1983-11-02
CA1209949A (en) 1986-08-19
NL8303340A (nl) 1984-04-16
US4483725A (en) 1984-11-20

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Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
8127 New person/name/address of the applicant

Owner name: AT & T TECHNOLOGIES, INC., NEW YORK, N.Y., US

D2 Grant after examination
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Free format text: BLUMBACH, KRAMER & PARTNER, 65193 WIESBADEN

8339 Ceased/non-payment of the annual fee