NL8303340A - Werkwijze voor het vervaardigen van artikelen door neerslaan in de dampfase van uit een aantal bestanddelen bestaand materiaal. - Google Patents
Werkwijze voor het vervaardigen van artikelen door neerslaan in de dampfase van uit een aantal bestanddelen bestaand materiaal. Download PDFInfo
- Publication number
- NL8303340A NL8303340A NL8303340A NL8303340A NL8303340A NL 8303340 A NL8303340 A NL 8303340A NL 8303340 A NL8303340 A NL 8303340A NL 8303340 A NL8303340 A NL 8303340A NL 8303340 A NL8303340 A NL 8303340A
- Authority
- NL
- Netherlands
- Prior art keywords
- substrate
- particles
- particle
- particle stream
- stream
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/005—Oxydation
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/429,289 US4483725A (en) | 1982-09-30 | 1982-09-30 | Reactive vapor deposition of multiconstituent material |
US42928982 | 1982-09-30 |
Publications (1)
Publication Number | Publication Date |
---|---|
NL8303340A true NL8303340A (nl) | 1984-04-16 |
Family
ID=23702618
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL8303340A NL8303340A (nl) | 1982-09-30 | 1983-09-29 | Werkwijze voor het vervaardigen van artikelen door neerslaan in de dampfase van uit een aantal bestanddelen bestaand materiaal. |
Country Status (7)
Country | Link |
---|---|
US (1) | US4483725A (de) |
JP (1) | JPS5984420A (de) |
CA (1) | CA1209949A (de) |
DE (1) | DE3335107A1 (de) |
FR (1) | FR2533944B1 (de) |
GB (1) | GB2129020B (de) |
NL (1) | NL8303340A (de) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6113626A (ja) * | 1984-06-29 | 1986-01-21 | Hitachi Ltd | プラズマ処理装置 |
DE3437120A1 (de) * | 1984-10-10 | 1986-04-10 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Verfahren zum herstellen von halbleiterschichten auf halbleiterkoerpern oder zur eindiffusion von stoerstellen im halbleiterkoerper |
JPS61135126A (ja) * | 1984-12-06 | 1986-06-23 | Hitachi Ltd | プラズマ処理装置 |
JPS628517A (ja) * | 1985-07-04 | 1987-01-16 | Matsushita Electric Ind Co Ltd | 化合物薄膜の形成方法 |
JPS62172714A (ja) * | 1986-01-25 | 1987-07-29 | Nippon Telegr & Teleph Corp <Ntt> | 化合物半導体薄膜の製造方法 |
KR910007382B1 (ko) * | 1987-08-07 | 1991-09-25 | 가부시기가이샤 히다찌세이사꾸쇼 | 초전도 재료 및 초전도 박막의 제조방법 |
US4900591A (en) * | 1988-01-20 | 1990-02-13 | The United States Of America As Represented By The Secretary Of The Air Force | Method for the deposition of high quality silicon dioxide at low temperature |
US4966887A (en) * | 1988-06-24 | 1990-10-30 | The Research Foundation Of State University Of Ny | Method for the production of oxide superconducting films by laser assisted molecular beam epitaxy |
US5192393A (en) * | 1989-05-24 | 1993-03-09 | Hitachi, Ltd. | Method for growing thin film by beam deposition and apparatus for practicing the same |
JPH038331A (ja) * | 1989-06-06 | 1991-01-16 | Nec Corp | 酸化シリコン形成方法及び形成装置 |
JPH03202461A (ja) * | 1989-12-29 | 1991-09-04 | Nissin Electric Co Ltd | 高絶縁酸化ケイ素薄膜の形成方法 |
US5010036A (en) * | 1990-04-20 | 1991-04-23 | Eaton Corporation | Low temperature semiconductor bonding process with chemical vapor reaction |
US5248631A (en) * | 1990-08-24 | 1993-09-28 | Minnesota Mining And Manufacturing Company | Doping of iib-via semiconductors during molecular beam epitaxy using neutral free radicals |
US7235819B2 (en) | 1991-03-18 | 2007-06-26 | The Trustees Of Boston University | Semiconductor device having group III nitride buffer layer and growth layers |
US5633192A (en) * | 1991-03-18 | 1997-05-27 | Boston University | Method for epitaxially growing gallium nitride layers |
US5398641A (en) * | 1993-07-27 | 1995-03-21 | Texas Instruments Incorporated | Method for p-type doping of semiconductor structures formed of group II and group VI elements |
US5386798A (en) * | 1993-10-06 | 1995-02-07 | Martin Marietta Energy Systems, Inc. | Method for continuous control of composition and doping of pulsed laser deposited films |
WO1995034093A1 (fr) * | 1994-06-09 | 1995-12-14 | Sony Corporation | Procede de formation d'un film semi-conducteur fait d'un compose des groupes ii et vi dope a l'azote |
JP3568189B2 (ja) * | 1999-04-21 | 2004-09-22 | 東北パイオニア株式会社 | 有機elディスプレイの製造方法および装置 |
DE102005008889B4 (de) * | 2005-02-26 | 2016-07-07 | Leybold Optics Gmbh | Optisches Monitoringsystem für Beschichtungsprozesse |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1449361A (fr) * | 1964-08-28 | 1966-08-12 | Balzers Patent Beteilig Ag | Procédé pour accroître la robustesse de la liaison entre des couches minces de matière |
US3551312A (en) * | 1968-05-20 | 1970-12-29 | Bell Telephone Labor Inc | Vacuum evaporation deposition of group iii-a metal nitrides |
US3916034A (en) * | 1971-05-21 | 1975-10-28 | Hitachi Ltd | Method of transporting substances in a plasma stream to and depositing it on a target |
SE393967B (sv) * | 1974-11-29 | 1977-05-31 | Sateko Oy | Forfarande och for utforande av stroleggning mellan lagren i ett virkespaket |
FR2294246A1 (fr) * | 1974-12-13 | 1976-07-09 | Anvar | Perfectionnements aux procedes et aux dispositifs de formation de couches minces epitaxiales par condensation ionique d'un materiau formant substrat |
JPS5372A (en) * | 1976-06-24 | 1978-01-05 | Agency Of Ind Science & Technol | Selective doping crystal growing method |
JPS5489983A (en) * | 1977-12-28 | 1979-07-17 | Toshiba Corp | Device and method for vacuum deposition compound |
US4217374A (en) * | 1978-03-08 | 1980-08-12 | Energy Conversion Devices, Inc. | Amorphous semiconductors equivalent to crystalline semiconductors |
EP0029747A1 (de) * | 1979-11-27 | 1981-06-03 | Konica Corporation | Vorrichtung zum Aufdampfen im Vakuum und Verfahren zum Formen einer dünnen Schicht unter Verwendung dieser Vorrichtung |
CA1159012A (en) * | 1980-05-02 | 1983-12-20 | Seitaro Matsuo | Plasma deposition apparatus |
GR75775B (de) * | 1980-10-06 | 1984-08-02 | Merck & Co Inc | |
IE53485B1 (en) * | 1981-02-12 | 1988-11-23 | Energy Conversion Devices Inc | Improved photoresponsive amorphous alloys |
DE61906T1 (de) * | 1981-03-26 | 1983-05-26 | Inoue-Japax Research Inc., Yokohama, Kanagawa | Verfahren und vorrichtung zur bearbeitung eines werkstueckes mit energiereichen teilchen und ein auf diese weise bearbeitetes produkt. |
JPS57171660A (en) * | 1981-04-15 | 1982-10-22 | Matsushita Electric Ind Co Ltd | Method and device for vacuum deposition |
GB2119278B (en) * | 1982-04-13 | 1987-04-15 | Michael Paul Neary | Improvements in or relating to a chemical method |
-
1982
- 1982-09-30 US US06/429,289 patent/US4483725A/en not_active Expired - Lifetime
-
1983
- 1983-08-24 CA CA000435235A patent/CA1209949A/en not_active Expired
- 1983-09-27 FR FR838315320A patent/FR2533944B1/fr not_active Expired
- 1983-09-28 GB GB08325881A patent/GB2129020B/en not_active Expired
- 1983-09-28 DE DE19833335107 patent/DE3335107A1/de active Granted
- 1983-09-29 NL NL8303340A patent/NL8303340A/nl not_active Application Discontinuation
- 1983-09-30 JP JP58180923A patent/JPS5984420A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
JPS5984420A (ja) | 1984-05-16 |
CA1209949A (en) | 1986-08-19 |
GB8325881D0 (en) | 1983-11-02 |
FR2533944B1 (fr) | 1989-12-01 |
GB2129020A (en) | 1984-05-10 |
DE3335107C2 (de) | 1987-04-23 |
US4483725A (en) | 1984-11-20 |
DE3335107A1 (de) | 1984-04-05 |
FR2533944A1 (fr) | 1984-04-06 |
GB2129020B (en) | 1986-04-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A85 | Still pending on 85-01-01 | ||
BA | A request for search or an international-type search has been filed | ||
BB | A search report has been drawn up | ||
BC | A request for examination has been filed | ||
BV | The patent application has lapsed |