DE69601948T2 - Optische resonanzstruktur - Google Patents

Optische resonanzstruktur

Info

Publication number
DE69601948T2
DE69601948T2 DE69601948T DE69601948T DE69601948T2 DE 69601948 T2 DE69601948 T2 DE 69601948T2 DE 69601948 T DE69601948 T DE 69601948T DE 69601948 T DE69601948 T DE 69601948T DE 69601948 T2 DE69601948 T2 DE 69601948T2
Authority
DE
Germany
Prior art keywords
resonator
structure according
reflection
rings
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69601948T
Other languages
German (de)
English (en)
Other versions
DE69601948D1 (de
Inventor
Michael John Brundish Woodbridge Suffolk Ip13 8Bl Adams
Michael Andreja Ipswich Suffolk Ip3 9Ad Fisher
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
IPG Photonics Corp
Original Assignee
British Telecommunications PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by British Telecommunications PLC filed Critical British Telecommunications PLC
Application granted granted Critical
Publication of DE69601948D1 publication Critical patent/DE69601948D1/de
Publication of DE69601948T2 publication Critical patent/DE69601948T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18322—Position of the structure
    • H01S5/18327—Structure being part of a DBR
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02G—INSTALLATION OF ELECTRIC CABLES OR LINES, OR OF COMBINED OPTICAL AND ELECTRIC CABLES OR LINES
    • H02G15/00—Cable fittings
    • H02G15/013—Sealing means for cable inlets
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02G—INSTALLATION OF ELECTRIC CABLES OR LINES, OR OF COMBINED OPTICAL AND ELECTRIC CABLES OR LINES
    • H02G3/00—Installations of electric cables or lines or protective tubing therefor in or on buildings, equivalent structures or vehicles
    • H02G3/02—Details
    • H02G3/08—Distribution boxes; Connection or junction boxes
    • H02G3/088—Dustproof, splashproof, drip-proof, waterproof, or flameproof casings or inlets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/16—Semiconductor lasers with special structural design to influence the modes, e.g. specific multimode
    • H01S2301/166—Single transverse or lateral mode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18319—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement comprising a periodical structure in lateral directions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18355—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a defined polarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18369—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S277/00—Seal for a joint or juncture
    • Y10S277/904—Viscous seal

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Civil Engineering (AREA)
  • Structural Engineering (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Integrated Circuits (AREA)
DE69601948T 1995-09-29 1996-09-26 Optische resonanzstruktur Expired - Lifetime DE69601948T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP95306917 1995-09-29
PCT/GB1996/002375 WO1997013302A1 (en) 1995-09-29 1996-09-26 Optically resonant structure

Publications (2)

Publication Number Publication Date
DE69601948D1 DE69601948D1 (de) 1999-05-06
DE69601948T2 true DE69601948T2 (de) 1999-08-05

Family

ID=8221347

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69601948T Expired - Lifetime DE69601948T2 (de) 1995-09-29 1996-09-26 Optische resonanzstruktur

Country Status (8)

Country Link
US (1) US6061381A (enExample)
EP (1) EP0852834B1 (enExample)
JP (2) JPH11513534A (enExample)
CN (1) CN1090398C (enExample)
AU (1) AU698782B2 (enExample)
CA (1) CA2231396C (enExample)
DE (1) DE69601948T2 (enExample)
WO (1) WO1997013302A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10234152A1 (de) * 2001-08-02 2003-02-13 Furukawa Electric Co Ltd Oberflächenemittierende Lasereinrichtung
EP2101379A1 (de) 2008-03-14 2009-09-16 Universität Stuttgart VCSEL mit monolithisch integrierter Fresnel-Linse

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DE10353951A1 (de) * 2003-11-18 2005-06-16 U-L-M Photonics Gmbh Polarisationskontrolle von Vertikaldiodenlasern durch ein monolothisch integriertes Oberflächengitter
KR100273134B1 (ko) * 1997-11-29 2001-01-15 정선종 단일모드표면방출레이저및그제조방법
JP3713956B2 (ja) * 1998-05-29 2005-11-09 富士ゼロックス株式会社 面発光型半導体レーザ素子の製造方法
US6327293B1 (en) * 1998-08-12 2001-12-04 Coherent, Inc. Optically-pumped external-mirror vertical-cavity semiconductor-laser
US6195485B1 (en) * 1998-10-26 2001-02-27 The Regents Of The University Of California Direct-coupled multimode WDM optical data links with monolithically-integrated multiple-channel VCSEL and photodetector
US7257143B2 (en) * 1998-12-21 2007-08-14 Finisar Corporation Multicomponent barrier layers in quantum well active regions to enhance confinement and speed
US7095770B2 (en) 2001-12-20 2006-08-22 Finisar Corporation Vertical cavity surface emitting laser including indium, antimony and nitrogen in the active region
US7408964B2 (en) 2001-12-20 2008-08-05 Finisar Corporation Vertical cavity surface emitting laser including indium and nitrogen in the active region
US7058112B2 (en) 2001-12-27 2006-06-06 Finisar Corporation Indium free vertical cavity surface emitting laser
US7167495B2 (en) * 1998-12-21 2007-01-23 Finisar Corporation Use of GaAs extended barrier layers between active regions containing nitrogen and AlGaAs confining layers
US7286585B2 (en) * 1998-12-21 2007-10-23 Finisar Corporation Low temperature grown layers with migration enhanced epitaxy adjacent to an InGaAsN(Sb) based active region
US7435660B2 (en) * 1998-12-21 2008-10-14 Finisar Corporation Migration enhanced epitaxy fabrication of active regions having quantum wells
US20030219917A1 (en) * 1998-12-21 2003-11-27 Johnson Ralph H. System and method using migration enhanced epitaxy for flattening active layers and the mechanical stabilization of quantum wells associated with vertical cavity surface emitting lasers
US6975660B2 (en) 2001-12-27 2005-12-13 Finisar Corporation Vertical cavity surface emitting laser including indium and antimony in the active region
US6922426B2 (en) 2001-12-20 2005-07-26 Finisar Corporation Vertical cavity surface emitting laser including indium in the active region
GB2349739A (en) * 1999-04-12 2000-11-08 Mitel Semiconductor Ab Vertical cavity surface emitting lasers
US6339496B1 (en) 1999-06-22 2002-01-15 University Of Maryland Cavity-less vertical semiconductor optical amplifier
US7095767B1 (en) * 1999-08-30 2006-08-22 Research Investment Network, Inc. Near field optical apparatus
US6778582B1 (en) * 2000-03-06 2004-08-17 Novalux, Inc. Coupled cavity high power semiconductor laser
US20060029120A1 (en) * 2000-03-06 2006-02-09 Novalux Inc. Coupled cavity high power semiconductor laser
US6583033B2 (en) * 2000-08-22 2003-06-24 The Regents Of The University Of California Method of fabricating a distributed Bragg reflector by controlling material composition using molecular beam epitaxy
US6807216B1 (en) 2000-09-29 2004-10-19 Donald Bennett Hilliard Circular laser
GB2379797A (en) * 2001-09-15 2003-03-19 Zarlink Semiconductor Ab Surface Emitting Laser
US6656761B2 (en) * 2001-11-21 2003-12-02 Motorola, Inc. Method for forming a semiconductor device for detecting light
US20030152125A1 (en) * 2002-02-13 2003-08-14 Junichi Kinoshita Surface emitting laser and semiconductor light emitting device
US6888873B2 (en) * 2002-02-21 2005-05-03 Finisar Corporation Long wavelength VCSEL bottom mirror
US7295586B2 (en) * 2002-02-21 2007-11-13 Finisar Corporation Carbon doped GaAsSb suitable for use in tunnel junctions of long-wavelength VCSELs
US6822995B2 (en) * 2002-02-21 2004-11-23 Finisar Corporation GaAs/AI(Ga)As distributed bragg reflector on InP
US6778581B1 (en) * 2002-09-24 2004-08-17 Finisar Corporation Tunable vertical cavity surface emitting laser
US6934425B2 (en) * 2003-01-24 2005-08-23 Califoria Institute Of Technology Traverse Bragg resonance lasers and amplifiers and method of operating the same
JP2006005324A (ja) * 2004-05-19 2006-01-05 Ricoh Co Ltd 面発光レーザ素子および面発光レーザアレイおよび光インターコネクションシステムおよび光通信システムおよび電子写真システムおよび光ディスクシステム
US7542499B2 (en) * 2003-11-27 2009-06-02 Ricoh Company, Ltd. Surface-emission laser diode and surface-emission laser array, optical interconnection system, optical communication system, electrophotographic system, and optical disk system
US7072376B2 (en) * 2004-09-16 2006-07-04 Corning Incorporated Method of manufacturing an InP based vertical cavity surface emitting laser and device produced therefrom
US7508965B2 (en) * 2004-06-01 2009-03-24 Lumidigm, Inc. System and method for robust fingerprint acquisition
US6956246B1 (en) * 2004-06-03 2005-10-18 Lumileds Lighting U.S., Llc Resonant cavity III-nitride light emitting devices fabricated by growth substrate removal
US7322704B2 (en) * 2004-07-30 2008-01-29 Novalux, Inc. Frequency stabilized vertical extended cavity surface emitting lasers
WO2006039341A2 (en) * 2004-10-01 2006-04-13 Finisar Corporation Vertical cavity surface emitting laser having multiple top-side contacts
US7860137B2 (en) * 2004-10-01 2010-12-28 Finisar Corporation Vertical cavity surface emitting laser with undoped top mirror
US7412144B2 (en) * 2005-07-22 2008-08-12 The United States Of America As Represented By The Secretary Of The Army Photonic crystal-based optical waveguide modulator
US20070242715A1 (en) * 2006-04-18 2007-10-18 Johan Gustavsson Mode and polarization control in vcsels using sub-wavelength structure
CN101093931B (zh) * 2006-06-22 2010-11-24 中国科学院半导体研究所 集成泵浦光源的长波长垂直腔面发射激光器及制作方法
WO2016008083A1 (zh) * 2014-07-15 2016-01-21 华为技术有限公司 一种垂直腔面发射激光器vcsel
KR102384228B1 (ko) * 2015-09-30 2022-04-07 삼성전자주식회사 반도체 레이저 공진기 및 이를 포함하는 반도체 레이저 소자
EP3496216A1 (en) * 2017-12-08 2019-06-12 Koninklijke Philips N.V. Segmented vertical cavity surface emitting laser
CN109889178B (zh) * 2018-12-26 2023-07-04 天津大学 体声波谐振器
US11209398B2 (en) * 2019-09-13 2021-12-28 Applied Materials, Inc. High quality factor embedded resonator wafers
CN112993751B (zh) * 2021-01-28 2022-08-19 湖北光安伦芯片有限公司 一种纳米柱vcsel光源结构及其制备方法
US12362541B2 (en) * 2021-04-30 2025-07-15 Lumentum Operations Llc Methods for incorporating a control structure within a vertical cavity surface emitting laser device cavity
CN113422292B (zh) * 2021-06-22 2022-10-18 常州纵慧芯光半导体科技有限公司 一种垂直腔面发射激光器及其制造方法与应用
CN116826516A (zh) * 2022-03-21 2023-09-29 华为技术有限公司 激光器及其制备方法

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JPH0254981A (ja) * 1988-08-20 1990-02-23 Fujitsu Ltd 面発光レーザ及びレーザアレイ
DE4135813C2 (de) * 1990-10-31 1997-11-06 Toshiba Kawasaki Kk Oberflächenemittierende Halbleiter-Laservorrichtung
JPH04233291A (ja) * 1990-12-28 1992-08-21 Fujitsu Ltd 半導体レーザ
EP0672311B1 (de) * 1992-12-03 1996-09-18 Siemens Aktiengesellschaft Abstimmbare oberflächenemittierende laserdiode
DE4240706A1 (de) * 1992-12-03 1994-06-09 Siemens Ag Oberflächenemittierende Laserdiode
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DE69405427T2 (de) * 1993-03-04 1998-04-02 At & T Corp Vorrichtung mit fokussierendem oberflächenemittierendem Halbleiterlaser
US5357591A (en) * 1993-04-06 1994-10-18 Yuan Jiang Cylindrical-wave controlling, generating and guiding devices
US5388120A (en) * 1993-09-21 1995-02-07 Motorola, Inc. VCSEL with unstable resonator

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10234152A1 (de) * 2001-08-02 2003-02-13 Furukawa Electric Co Ltd Oberflächenemittierende Lasereinrichtung
EP2101379A1 (de) 2008-03-14 2009-09-16 Universität Stuttgart VCSEL mit monolithisch integrierter Fresnel-Linse
DE102008014193A1 (de) * 2008-03-14 2009-09-24 Universität Stuttgart Vertikal-Resonator-Laser

Also Published As

Publication number Publication date
EP0852834A1 (en) 1998-07-15
AU698782B2 (en) 1998-11-05
WO1997013302A1 (en) 1997-04-10
CN1198265A (zh) 1998-11-04
CA2231396A1 (en) 1997-04-10
US6061381A (en) 2000-05-09
JP2008022024A (ja) 2008-01-31
AU7090896A (en) 1997-04-28
EP0852834B1 (en) 1999-03-31
DE69601948D1 (de) 1999-05-06
CN1090398C (zh) 2002-09-04
JPH11513534A (ja) 1999-11-16
CA2231396C (en) 2001-02-27

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: IPG PHOTONICS CORP., OXFORD, MASS., US