AU698782B2 - Optically resonant structure - Google Patents

Optically resonant structure

Info

Publication number
AU698782B2
AU698782B2 AU70908/96A AU7090896A AU698782B2 AU 698782 B2 AU698782 B2 AU 698782B2 AU 70908/96 A AU70908/96 A AU 70908/96A AU 7090896 A AU7090896 A AU 7090896A AU 698782 B2 AU698782 B2 AU 698782B2
Authority
AU
Australia
Prior art keywords
struαure
cavity
refleαive
layer
rings
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
AU70908/96A
Other languages
English (en)
Other versions
AU7090896A (en
Inventor
Michael John Adams
Michael Andreja Fisher
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
IPG Photonics Corp
Original Assignee
British Telecommunications PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by British Telecommunications PLC filed Critical British Telecommunications PLC
Publication of AU7090896A publication Critical patent/AU7090896A/en
Application granted granted Critical
Publication of AU698782B2 publication Critical patent/AU698782B2/en
Assigned to IPG PHOTONICS CORPORATION reassignment IPG PHOTONICS CORPORATION Alteration of Name(s) in Register under S187 Assignors: BRITISH TELECOMMUNICATIONS PUBLIC LIMITED COMPANY
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18322—Position of the structure
    • H01S5/18327—Structure being part of a DBR
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02G—INSTALLATION OF ELECTRIC CABLES OR LINES, OR OF COMBINED OPTICAL AND ELECTRIC CABLES OR LINES
    • H02G15/00—Cable fittings
    • H02G15/013—Sealing means for cable inlets
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02G—INSTALLATION OF ELECTRIC CABLES OR LINES, OR OF COMBINED OPTICAL AND ELECTRIC CABLES OR LINES
    • H02G3/00—Installations of electric cables or lines or protective tubing therefor in or on buildings, equivalent structures or vehicles
    • H02G3/02—Details
    • H02G3/08—Distribution boxes; Connection or junction boxes
    • H02G3/088—Dustproof, splashproof, drip-proof, waterproof, or flameproof casings or inlets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/16—Semiconductor lasers with special structural design to influence the modes, e.g. specific multimode
    • H01S2301/166—Single transverse or lateral mode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18319—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement comprising a periodical structure in lateral directions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18355—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a defined polarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18369—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S277/00—Seal for a joint or juncture
    • Y10S277/904—Viscous seal

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Civil Engineering (AREA)
  • Structural Engineering (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Integrated Circuits (AREA)
AU70908/96A 1995-09-29 1996-09-26 Optically resonant structure Ceased AU698782B2 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP95306917 1995-09-29
EP95306917 1995-09-29
PCT/GB1996/002375 WO1997013302A1 (en) 1995-09-29 1996-09-26 Optically resonant structure

Publications (2)

Publication Number Publication Date
AU7090896A AU7090896A (en) 1997-04-28
AU698782B2 true AU698782B2 (en) 1998-11-05

Family

ID=8221347

Family Applications (1)

Application Number Title Priority Date Filing Date
AU70908/96A Ceased AU698782B2 (en) 1995-09-29 1996-09-26 Optically resonant structure

Country Status (8)

Country Link
US (1) US6061381A (enExample)
EP (1) EP0852834B1 (enExample)
JP (2) JPH11513534A (enExample)
CN (1) CN1090398C (enExample)
AU (1) AU698782B2 (enExample)
CA (1) CA2231396C (enExample)
DE (1) DE69601948T2 (enExample)
WO (1) WO1997013302A1 (enExample)

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DE10353951A1 (de) * 2003-11-18 2005-06-16 U-L-M Photonics Gmbh Polarisationskontrolle von Vertikaldiodenlasern durch ein monolothisch integriertes Oberflächengitter
KR100273134B1 (ko) * 1997-11-29 2001-01-15 정선종 단일모드표면방출레이저및그제조방법
JP3713956B2 (ja) * 1998-05-29 2005-11-09 富士ゼロックス株式会社 面発光型半導体レーザ素子の製造方法
US6327293B1 (en) * 1998-08-12 2001-12-04 Coherent, Inc. Optically-pumped external-mirror vertical-cavity semiconductor-laser
US6195485B1 (en) * 1998-10-26 2001-02-27 The Regents Of The University Of California Direct-coupled multimode WDM optical data links with monolithically-integrated multiple-channel VCSEL and photodetector
US7257143B2 (en) * 1998-12-21 2007-08-14 Finisar Corporation Multicomponent barrier layers in quantum well active regions to enhance confinement and speed
US7095770B2 (en) 2001-12-20 2006-08-22 Finisar Corporation Vertical cavity surface emitting laser including indium, antimony and nitrogen in the active region
US7408964B2 (en) 2001-12-20 2008-08-05 Finisar Corporation Vertical cavity surface emitting laser including indium and nitrogen in the active region
US7058112B2 (en) 2001-12-27 2006-06-06 Finisar Corporation Indium free vertical cavity surface emitting laser
US7167495B2 (en) * 1998-12-21 2007-01-23 Finisar Corporation Use of GaAs extended barrier layers between active regions containing nitrogen and AlGaAs confining layers
US7286585B2 (en) * 1998-12-21 2007-10-23 Finisar Corporation Low temperature grown layers with migration enhanced epitaxy adjacent to an InGaAsN(Sb) based active region
US7435660B2 (en) * 1998-12-21 2008-10-14 Finisar Corporation Migration enhanced epitaxy fabrication of active regions having quantum wells
US20030219917A1 (en) * 1998-12-21 2003-11-27 Johnson Ralph H. System and method using migration enhanced epitaxy for flattening active layers and the mechanical stabilization of quantum wells associated with vertical cavity surface emitting lasers
US6975660B2 (en) 2001-12-27 2005-12-13 Finisar Corporation Vertical cavity surface emitting laser including indium and antimony in the active region
US6922426B2 (en) 2001-12-20 2005-07-26 Finisar Corporation Vertical cavity surface emitting laser including indium in the active region
GB2349739A (en) * 1999-04-12 2000-11-08 Mitel Semiconductor Ab Vertical cavity surface emitting lasers
US6339496B1 (en) 1999-06-22 2002-01-15 University Of Maryland Cavity-less vertical semiconductor optical amplifier
US7095767B1 (en) * 1999-08-30 2006-08-22 Research Investment Network, Inc. Near field optical apparatus
US6778582B1 (en) * 2000-03-06 2004-08-17 Novalux, Inc. Coupled cavity high power semiconductor laser
US20060029120A1 (en) * 2000-03-06 2006-02-09 Novalux Inc. Coupled cavity high power semiconductor laser
US6583033B2 (en) * 2000-08-22 2003-06-24 The Regents Of The University Of California Method of fabricating a distributed Bragg reflector by controlling material composition using molecular beam epitaxy
US6807216B1 (en) 2000-09-29 2004-10-19 Donald Bennett Hilliard Circular laser
JP2003115634A (ja) * 2001-08-02 2003-04-18 Furukawa Electric Co Ltd:The 面発光レーザ素子
GB2379797A (en) * 2001-09-15 2003-03-19 Zarlink Semiconductor Ab Surface Emitting Laser
US6656761B2 (en) * 2001-11-21 2003-12-02 Motorola, Inc. Method for forming a semiconductor device for detecting light
US20030152125A1 (en) * 2002-02-13 2003-08-14 Junichi Kinoshita Surface emitting laser and semiconductor light emitting device
US6888873B2 (en) * 2002-02-21 2005-05-03 Finisar Corporation Long wavelength VCSEL bottom mirror
US7295586B2 (en) * 2002-02-21 2007-11-13 Finisar Corporation Carbon doped GaAsSb suitable for use in tunnel junctions of long-wavelength VCSELs
US6822995B2 (en) * 2002-02-21 2004-11-23 Finisar Corporation GaAs/AI(Ga)As distributed bragg reflector on InP
US6778581B1 (en) * 2002-09-24 2004-08-17 Finisar Corporation Tunable vertical cavity surface emitting laser
US6934425B2 (en) * 2003-01-24 2005-08-23 Califoria Institute Of Technology Traverse Bragg resonance lasers and amplifiers and method of operating the same
JP2006005324A (ja) * 2004-05-19 2006-01-05 Ricoh Co Ltd 面発光レーザ素子および面発光レーザアレイおよび光インターコネクションシステムおよび光通信システムおよび電子写真システムおよび光ディスクシステム
US7542499B2 (en) * 2003-11-27 2009-06-02 Ricoh Company, Ltd. Surface-emission laser diode and surface-emission laser array, optical interconnection system, optical communication system, electrophotographic system, and optical disk system
US7072376B2 (en) * 2004-09-16 2006-07-04 Corning Incorporated Method of manufacturing an InP based vertical cavity surface emitting laser and device produced therefrom
US7508965B2 (en) * 2004-06-01 2009-03-24 Lumidigm, Inc. System and method for robust fingerprint acquisition
US6956246B1 (en) * 2004-06-03 2005-10-18 Lumileds Lighting U.S., Llc Resonant cavity III-nitride light emitting devices fabricated by growth substrate removal
US7322704B2 (en) * 2004-07-30 2008-01-29 Novalux, Inc. Frequency stabilized vertical extended cavity surface emitting lasers
WO2006039341A2 (en) * 2004-10-01 2006-04-13 Finisar Corporation Vertical cavity surface emitting laser having multiple top-side contacts
US7860137B2 (en) * 2004-10-01 2010-12-28 Finisar Corporation Vertical cavity surface emitting laser with undoped top mirror
US7412144B2 (en) * 2005-07-22 2008-08-12 The United States Of America As Represented By The Secretary Of The Army Photonic crystal-based optical waveguide modulator
US20070242715A1 (en) * 2006-04-18 2007-10-18 Johan Gustavsson Mode and polarization control in vcsels using sub-wavelength structure
CN101093931B (zh) * 2006-06-22 2010-11-24 中国科学院半导体研究所 集成泵浦光源的长波长垂直腔面发射激光器及制作方法
DE102008014193A1 (de) 2008-03-14 2009-09-24 Universität Stuttgart Vertikal-Resonator-Laser
WO2016008083A1 (zh) * 2014-07-15 2016-01-21 华为技术有限公司 一种垂直腔面发射激光器vcsel
KR102384228B1 (ko) * 2015-09-30 2022-04-07 삼성전자주식회사 반도체 레이저 공진기 및 이를 포함하는 반도체 레이저 소자
EP3496216A1 (en) * 2017-12-08 2019-06-12 Koninklijke Philips N.V. Segmented vertical cavity surface emitting laser
CN109889178B (zh) * 2018-12-26 2023-07-04 天津大学 体声波谐振器
US11209398B2 (en) * 2019-09-13 2021-12-28 Applied Materials, Inc. High quality factor embedded resonator wafers
CN112993751B (zh) * 2021-01-28 2022-08-19 湖北光安伦芯片有限公司 一种纳米柱vcsel光源结构及其制备方法
US12362541B2 (en) * 2021-04-30 2025-07-15 Lumentum Operations Llc Methods for incorporating a control structure within a vertical cavity surface emitting laser device cavity
CN113422292B (zh) * 2021-06-22 2022-10-18 常州纵慧芯光半导体科技有限公司 一种垂直腔面发射激光器及其制造方法与应用
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US5301201A (en) * 1993-03-01 1994-04-05 At&T Bell Laboratories Article comprising a tunable semiconductor laser
EP0614255A1 (en) * 1993-03-04 1994-09-07 AT&T Corp. Surface emitting semiconductor laser with integrated focusing means

Also Published As

Publication number Publication date
DE69601948T2 (de) 1999-08-05
EP0852834A1 (en) 1998-07-15
WO1997013302A1 (en) 1997-04-10
CN1198265A (zh) 1998-11-04
CA2231396A1 (en) 1997-04-10
US6061381A (en) 2000-05-09
JP2008022024A (ja) 2008-01-31
AU7090896A (en) 1997-04-28
EP0852834B1 (en) 1999-03-31
DE69601948D1 (de) 1999-05-06
CN1090398C (zh) 2002-09-04
JPH11513534A (ja) 1999-11-16
CA2231396C (en) 2001-02-27

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