DE69534412D1 - III-V-Halbleiterstruktur und Verfahren zu deren Herstellung - Google Patents

III-V-Halbleiterstruktur und Verfahren zu deren Herstellung

Info

Publication number
DE69534412D1
DE69534412D1 DE69534412T DE69534412T DE69534412D1 DE 69534412 D1 DE69534412 D1 DE 69534412D1 DE 69534412 T DE69534412 T DE 69534412T DE 69534412 T DE69534412 T DE 69534412T DE 69534412 D1 DE69534412 D1 DE 69534412D1
Authority
DE
Germany
Prior art keywords
iii
production
semiconductor structure
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69534412T
Other languages
English (en)
Other versions
DE69534412T2 (de
Inventor
Jaeshin Cho
Mark Durlam
Kelly W Kyler
Jonathan K Abrokwah
Wayne A Cronin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP USA Inc
Original Assignee
Freescale Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Freescale Semiconductor Inc filed Critical Freescale Semiconductor Inc
Application granted granted Critical
Publication of DE69534412D1 publication Critical patent/DE69534412D1/de
Publication of DE69534412T2 publication Critical patent/DE69534412T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66848—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET
    • H01L29/66856—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET with an active layer made of a group 13/15 material
    • H01L29/66863—Lateral single gate transistors
    • H01L29/66878—Processes wherein the final gate is made before the formation, e.g. activation anneal, of the source and drain regions in the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
DE69534412T 1994-06-06 1995-05-29 III-V-Halbleiterstruktur und Verfahren zu deren Herstellung Expired - Lifetime DE69534412T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US254209 1994-06-06
US08/254,209 US5512518A (en) 1994-06-06 1994-06-06 Method of manufacture of multilayer dielectric on a III-V substrate

Publications (2)

Publication Number Publication Date
DE69534412D1 true DE69534412D1 (de) 2005-10-06
DE69534412T2 DE69534412T2 (de) 2006-03-09

Family

ID=22963356

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69534412T Expired - Lifetime DE69534412T2 (de) 1994-06-06 1995-05-29 III-V-Halbleiterstruktur und Verfahren zu deren Herstellung

Country Status (6)

Country Link
US (1) US5512518A (de)
EP (1) EP0688044B1 (de)
JP (2) JP3621752B2 (de)
KR (1) KR100355691B1 (de)
CN (1) CN1086511C (de)
DE (1) DE69534412T2 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5830774A (en) * 1996-06-24 1998-11-03 Motorola, Inc. Method for forming a metal pattern on a substrate
US5821170A (en) * 1996-09-30 1998-10-13 Motorola, Inc. Method for etching an insulating material
US5966624A (en) * 1997-07-29 1999-10-12 Siemens Aktiengesellschaft Method of manufacturing a semiconductor structure having a crystalline layer
US6156665A (en) * 1998-04-13 2000-12-05 Lucent Technologies Inc. Trilayer lift-off process for semiconductor device metallization
US6528405B1 (en) 2000-02-18 2003-03-04 Motorola, Inc. Enhancement mode RF device and fabrication method
US6821829B1 (en) * 2000-06-12 2004-11-23 Freescale Semiconductor, Inc. Method of manufacturing a semiconductor component and semiconductor component thereof
US7504677B2 (en) * 2005-03-28 2009-03-17 Freescale Semiconductor, Inc. Multi-gate enhancement mode RF switch and bias arrangement
JP4799965B2 (ja) * 2005-09-06 2011-10-26 日本電信電話株式会社 窒化物半導体を用いたヘテロ構造電界効果トランジスタ
US7834456B2 (en) * 2009-01-20 2010-11-16 Raytheon Company Electrical contacts for CMOS devices and III-V devices formed on a silicon substrate
US8357571B2 (en) * 2010-09-10 2013-01-22 Cree, Inc. Methods of forming semiconductor contacts

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3798752A (en) * 1971-03-11 1974-03-26 Nippon Electric Co Method of producing a silicon gate insulated-gate field effect transistor
US3903591A (en) * 1971-09-22 1975-09-09 Siemens Ag Semiconductor arrangement
US3925572A (en) * 1972-10-12 1975-12-09 Ncr Co Multilevel conductor structure and method
US3978577A (en) * 1975-06-30 1976-09-07 International Business Machines Corporation Fixed and variable threshold N-channel MNOSFET integration technique
DE2967538D1 (en) * 1978-06-14 1985-12-05 Fujitsu Ltd Process for producing a semiconductor device having an insulating layer of silicon dioxide covered by a film of silicon oxynitride
JPS59106172A (ja) * 1982-12-07 1984-06-19 インタ−ナシヨナル　ビジネス　マシ−ンズ　コ−ポレ−シヨン 電界効果トランジスタの製造方法
JPS60136267A (ja) * 1983-12-23 1985-07-19 Fujitsu Ltd 半導体装置の製造方法
US4656101A (en) * 1984-11-07 1987-04-07 Semiconductor Energy Laboratory Co., Ltd. Electronic device with a protective film
US4789648A (en) * 1985-10-28 1988-12-06 International Business Machines Corporation Method for producing coplanar multi-level metal/insulator films on a substrate and for forming patterned conductive lines simultaneously with stud vias
US4944836A (en) * 1985-10-28 1990-07-31 International Business Machines Corporation Chem-mech polishing method for producing coplanar metal/insulator films on a substrate
US4767724A (en) * 1986-03-27 1988-08-30 General Electric Company Unframed via interconnection with dielectric etch stop
JPS62272571A (ja) * 1986-05-21 1987-11-26 Hitachi Ltd 半導体装置
JPS62276832A (ja) * 1986-05-26 1987-12-01 Hitachi Ltd 被膜形成方法およびそれを用いた半導体装置の製造方法
JPH01244666A (ja) * 1988-03-25 1989-09-29 Nec Corp 半導体装置の製造方法
JPH03124025A (ja) * 1989-10-06 1991-05-27 Nec Corp 半導体装置の製造方法
JPH03265586A (ja) * 1990-03-15 1991-11-26 Toshiba Corp 窒化アルミニウム基板の製造方法
JP2762800B2 (ja) * 1991-10-15 1998-06-04 日本電気株式会社 量子細線構造の製造方法
US5350709A (en) * 1992-06-13 1994-09-27 Sanyo Electric Co., Ltd. Method of doping a group III-V compound semiconductor

Also Published As

Publication number Publication date
DE69534412T2 (de) 2006-03-09
KR960002524A (ko) 1996-01-26
JPH07335675A (ja) 1995-12-22
CN1113606A (zh) 1995-12-20
EP0688044A2 (de) 1995-12-20
EP0688044A3 (de) 1997-12-29
CN1086511C (zh) 2002-06-19
KR100355691B1 (ko) 2002-12-11
JP2005051265A (ja) 2005-02-24
US5512518A (en) 1996-04-30
EP0688044B1 (de) 2005-08-31
JP3621752B2 (ja) 2005-02-16

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