DE69523092D1 - Verfahren zur Herstellung elektronischer Teile mit einer Luftbrückenverbindung - Google Patents
Verfahren zur Herstellung elektronischer Teile mit einer LuftbrückenverbindungInfo
- Publication number
- DE69523092D1 DE69523092D1 DE69523092T DE69523092T DE69523092D1 DE 69523092 D1 DE69523092 D1 DE 69523092D1 DE 69523092 T DE69523092 T DE 69523092T DE 69523092 T DE69523092 T DE 69523092T DE 69523092 D1 DE69523092 D1 DE 69523092D1
- Authority
- DE
- Germany
- Prior art keywords
- electronic parts
- bridge connection
- air bridge
- manufacturing electronic
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/4857—Multilayer substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F17/00—Fixed inductances of the signal type
- H01F17/0006—Printed inductances
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/02—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets
- H01F41/04—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets for manufacturing coils
- H01F41/041—Printed circuit coils
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/7682—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing the dielectric comprising air gaps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5381—Crossover interconnections, e.g. bridge stepovers
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4685—Manufacturing of cross-over conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Manufacturing Cores, Coils, And Magnets (AREA)
- Coils Or Transformers For Communication (AREA)
- Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
- Structure Of Printed Boards (AREA)
- Wire Bonding (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11137694A JP3267049B2 (ja) | 1994-05-25 | 1994-05-25 | エアブリッジ配線を有するスパイラルインダクタの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69523092D1 true DE69523092D1 (de) | 2001-11-15 |
DE69523092T2 DE69523092T2 (de) | 2002-05-29 |
Family
ID=14559625
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69523092T Expired - Lifetime DE69523092T2 (de) | 1994-05-25 | 1995-03-27 | Verfahren zur Herstellung elektronischer Teile mit einer Luftbrückenverbindung |
Country Status (4)
Country | Link |
---|---|
US (1) | US6060381A (de) |
EP (1) | EP0684647B1 (de) |
JP (1) | JP3267049B2 (de) |
DE (1) | DE69523092T2 (de) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6169320B1 (en) * | 1998-01-22 | 2001-01-02 | Raytheon Company | Spiral-shaped inductor structure for monolithic microwave integrated circuits having air gaps in underlying pedestal |
KR20000011585A (ko) * | 1998-07-28 | 2000-02-25 | 윤덕용 | 반도체소자및그제조방법 |
US6204165B1 (en) * | 1999-06-24 | 2001-03-20 | International Business Machines Corporation | Practical air dielectric interconnections by post-processing standard CMOS wafers |
KR100411811B1 (ko) * | 2001-04-02 | 2003-12-24 | 앰코 테크놀로지 코리아 주식회사 | 반도체패키지 |
US7094621B2 (en) * | 2003-03-05 | 2006-08-22 | Jbcr Innovations, L.L.P. | Fabrication of diaphragms and “floating” regions of single crystal semiconductor for MEMS devices |
US6812056B2 (en) * | 2003-03-05 | 2004-11-02 | Jbcr Innovations, Inc. | Technique for fabricating MEMS devices having diaphragms of “floating” regions of single crystal material |
US6790745B1 (en) | 2003-12-15 | 2004-09-14 | Jbcr Innovations | Fabrication of dielectrically isolated regions of silicon in a substrate |
DE102007020288B4 (de) | 2007-04-30 | 2013-12-12 | Epcos Ag | Elektrisches Bauelement |
US10218334B2 (en) | 2015-03-18 | 2019-02-26 | Taiyo Yuden Co., Ltd. | Acoustic wave device |
JP6444787B2 (ja) | 2015-03-23 | 2018-12-26 | 太陽誘電株式会社 | 弾性波デバイスおよびその製造方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL7608901A (nl) * | 1976-08-11 | 1978-02-14 | Philips Nv | Werkwijze ter vervaardiging van een halfge- leiderinrichting en halfgeleiderinrichting vervaardigd door middel van een dergelijke werkwijze. |
JPS6481343A (en) * | 1987-09-24 | 1989-03-27 | Nec Corp | Manufacture of integrated circuit |
JP2856778B2 (ja) * | 1989-09-07 | 1999-02-10 | 株式会社東芝 | 半導体装置の配線構造 |
US5171713A (en) * | 1990-01-10 | 1992-12-15 | Micrunity Systems Eng | Process for forming planarized, air-bridge interconnects on a semiconductor substrate |
JPH042151A (ja) * | 1990-04-18 | 1992-01-07 | Sumitomo Electric Ind Ltd | エアーブリッジ構造配線の作成方法 |
US5219713A (en) * | 1990-12-17 | 1993-06-15 | Rockwell International Corporation | Multi-layer photoresist air bridge fabrication method |
JPH04268750A (ja) * | 1991-02-25 | 1992-09-24 | Toshiba Corp | 半導体集積回路 |
JPH04290212A (ja) * | 1991-03-18 | 1992-10-14 | Murata Mfg Co Ltd | 半導体装置 |
US5408742A (en) * | 1991-10-28 | 1995-04-25 | Martin Marietta Corporation | Process for making air bridges for integrated circuits |
JPH0689940A (ja) * | 1992-09-08 | 1994-03-29 | Mitsubishi Electric Corp | エアブリッジ配線構造 |
-
1994
- 1994-05-25 JP JP11137694A patent/JP3267049B2/ja not_active Expired - Fee Related
-
1995
- 1995-03-27 DE DE69523092T patent/DE69523092T2/de not_active Expired - Lifetime
- 1995-03-27 EP EP95104496A patent/EP0684647B1/de not_active Expired - Lifetime
-
1997
- 1997-05-06 US US08/851,805 patent/US6060381A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0684647B1 (de) | 2001-10-10 |
DE69523092T2 (de) | 2002-05-29 |
US6060381A (en) | 2000-05-09 |
JP3267049B2 (ja) | 2002-03-18 |
EP0684647A1 (de) | 1995-11-29 |
JPH07321425A (ja) | 1995-12-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE59610212D1 (de) | Schaltungseinheit und Verfahren zur Herstellung einer Schaltungseinheit | |
DE69126586D1 (de) | Verfahren zur Herstellung einer Vorrichtung | |
DE59704370D1 (de) | Verfahren zur herstellung von mikrowärmetauschern | |
DE69606310T2 (de) | Oberflächenmontierte leitfähige bauelemente und verfahren zur herstellung derselben | |
ATE309350T1 (de) | Verfahren zur herstellung von polypeptiden mit geeigneter glykosilierung | |
DE69522139D1 (de) | Verfahren zur Herstellung einer CMOS Vorrichtung | |
DE69627951D1 (de) | Verfahren zur Herstellung einer elektronenemittierende Vorrichtung | |
DE69508793T2 (de) | Verfahren zur herstellung von perfluorkohlenstoffen | |
DE69525000D1 (de) | Verfahren zur Herstellung von geteilten mechanischen Teilen | |
DE69519379T2 (de) | Verfahren zur herstellung von trifluorethylene | |
DE69525273T2 (de) | Verfahren zur Herstellung einer integrierten Schaltung | |
DE69818485D1 (de) | Verfahren zur herstellung von elektronischen bauteilen | |
DE69718296T2 (de) | Verfahren zur herstellung von flachglas | |
DE69520834D1 (de) | Verfahren zur herstellung von polyolefin mit funktionellen endgruppen | |
ATE201209T1 (de) | Verfahren zur herstellung von purinen | |
DE69523092D1 (de) | Verfahren zur Herstellung elektronischer Teile mit einer Luftbrückenverbindung | |
DE69528543T2 (de) | Verfahren zur Herstellung einer Antifuse | |
DE69523065D1 (de) | Verfahren zur herstellung einer electrolumineszierende vorrichtung | |
DE69718134D1 (de) | Verfahren zur Herstellung einer hochintegrierten Schaltung | |
DE59510618D1 (de) | Verfahren zur Herstellung einer Sensorelektrode | |
DE69734501D1 (de) | Verfahren zur herstellung einer elektronischen anordnung | |
DE69510466T2 (de) | Verfahren zur herstellung von n-phosphonomethylglyzin | |
DE59500046D1 (de) | Verfahren zur Herstellung einer Kühleinrichtung | |
DE69524007D1 (de) | Verfahren zur Herstellung von Organosiloxan mit Silanol-Endgruppe | |
DE69821428D1 (de) | Verfahren zur herstellung einer alpha-monoglucosylhesperidin-reichen substanz |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |