DE69516090T2 - Herstellungsverfahren eines Halbleiterdiodenlasers - Google Patents
Herstellungsverfahren eines HalbleiterdiodenlasersInfo
- Publication number
- DE69516090T2 DE69516090T2 DE69516090T DE69516090T DE69516090T2 DE 69516090 T2 DE69516090 T2 DE 69516090T2 DE 69516090 T DE69516090 T DE 69516090T DE 69516090 T DE69516090 T DE 69516090T DE 69516090 T2 DE69516090 T2 DE 69516090T2
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing process
- diode laser
- semiconductor diode
- semiconductor
- laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3202—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
- H01S5/164—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions comprising semiconductor material with a wider bandgap than the active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2304/00—Special growth methods for semiconductor lasers
- H01S2304/06—LPE
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
- H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019940030494A KR0141057B1 (ko) | 1994-11-19 | 1994-11-19 | 반도체 레이저 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69516090D1 DE69516090D1 (de) | 2000-05-11 |
DE69516090T2 true DE69516090T2 (de) | 2000-12-21 |
Family
ID=19398409
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69516090T Expired - Lifetime DE69516090T2 (de) | 1994-11-19 | 1995-11-17 | Herstellungsverfahren eines Halbleiterdiodenlasers |
Country Status (6)
Country | Link |
---|---|
US (1) | US5707892A (de) |
EP (1) | EP0713275B1 (de) |
JP (1) | JPH0927654A (de) |
KR (1) | KR0141057B1 (de) |
CN (1) | CN1074186C (de) |
DE (1) | DE69516090T2 (de) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10323860A1 (de) * | 2003-03-28 | 2004-11-11 | Osram Opto Semiconductors Gmbh | Halbleiterlaservorrichtung und Herstellungsverfahren |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200425327A (en) | 2003-02-21 | 2004-11-16 | Matsushita Electric Ind Co Ltd | Method and apparatus for liquid etching |
CN109830488B (zh) * | 2017-11-23 | 2021-02-19 | 国科光芯(海宁)科技股份有限公司 | 光束成像装置 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55162288A (en) * | 1979-06-04 | 1980-12-17 | Nippon Telegr & Teleph Corp <Ntt> | Manufacture of buried type photosemiconductor device |
JPS56112786A (en) * | 1980-02-08 | 1981-09-05 | Nec Corp | Manufacture of semiconductor laser |
NL8104068A (nl) * | 1981-09-02 | 1983-04-05 | Philips Nv | Halfgeleiderlaser. |
NL8401172A (nl) * | 1984-04-12 | 1985-11-01 | Philips Nv | Halfgeleiderlaser. |
JPS63158888A (ja) * | 1986-12-23 | 1988-07-01 | Matsushita Electric Ind Co Ltd | 半導体レ−ザ装置の製造方法 |
DE3731312C2 (de) * | 1987-09-17 | 1997-02-13 | Siemens Ag | Verfahren zum Vereinzeln von monolithisch hergestellten Laserdioden |
JPH0298989A (ja) * | 1988-10-06 | 1990-04-11 | Mitsubishi Electric Corp | 半導体レーザ製造方法 |
JPH03165086A (ja) * | 1989-11-24 | 1991-07-17 | Canon Inc | リッジレーザの製造方法 |
US5413956A (en) * | 1992-03-04 | 1995-05-09 | Sharp Kabushiki Kaisha | Method for producing a semiconductor laser device |
JPH07111357A (ja) * | 1993-10-05 | 1995-04-25 | Mitsubishi Electric Corp | 半導体レーザの製造方法 |
-
1994
- 1994-11-19 KR KR1019940030494A patent/KR0141057B1/ko not_active IP Right Cessation
-
1995
- 1995-11-17 EP EP95308242A patent/EP0713275B1/de not_active Expired - Lifetime
- 1995-11-17 DE DE69516090T patent/DE69516090T2/de not_active Expired - Lifetime
- 1995-11-19 CN CN95120331A patent/CN1074186C/zh not_active Expired - Fee Related
- 1995-11-20 JP JP7323544A patent/JPH0927654A/ja active Pending
- 1995-11-20 US US08/560,714 patent/US5707892A/en not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10323860A1 (de) * | 2003-03-28 | 2004-11-11 | Osram Opto Semiconductors Gmbh | Halbleiterlaservorrichtung und Herstellungsverfahren |
Also Published As
Publication number | Publication date |
---|---|
EP0713275B1 (de) | 2000-04-05 |
KR960019881A (ko) | 1996-06-17 |
US5707892A (en) | 1998-01-13 |
EP0713275A1 (de) | 1996-05-22 |
DE69516090D1 (de) | 2000-05-11 |
CN1130817A (zh) | 1996-09-11 |
JPH0927654A (ja) | 1997-01-28 |
KR0141057B1 (ko) | 1998-07-15 |
CN1074186C (zh) | 2001-10-31 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |