DE69516047D1 - Vorrichtung zur Aktivierung einer Vorspannungsquelle - Google Patents

Vorrichtung zur Aktivierung einer Vorspannungsquelle

Info

Publication number
DE69516047D1
DE69516047D1 DE69516047T DE69516047T DE69516047D1 DE 69516047 D1 DE69516047 D1 DE 69516047D1 DE 69516047 T DE69516047 T DE 69516047T DE 69516047 T DE69516047 T DE 69516047T DE 69516047 D1 DE69516047 D1 DE 69516047D1
Authority
DE
Germany
Prior art keywords
activating
voltage source
bias voltage
bias
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69516047T
Other languages
English (en)
Other versions
DE69516047T2 (de
Inventor
Colette Morche
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Publication of DE69516047D1 publication Critical patent/DE69516047D1/de
Application granted granted Critical
Publication of DE69516047T2 publication Critical patent/DE69516047T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04Modifications for accelerating switching
    • H03K17/041Modifications for accelerating switching without feedback from the output circuit to the control circuit
    • H03K17/0416Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the output circuit
    • H03K17/04163Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the output circuit in field-effect transistor switches
DE69516047T 1994-06-27 1995-06-21 Vorrichtung zur Aktivierung einer Vorspannungsquelle Expired - Fee Related DE69516047T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9408118A FR2721771B1 (fr) 1994-06-27 1994-06-27 Dispositif de mise en veille d'une source de polarisation.

Publications (2)

Publication Number Publication Date
DE69516047D1 true DE69516047D1 (de) 2000-05-11
DE69516047T2 DE69516047T2 (de) 2000-10-12

Family

ID=9464878

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69516047T Expired - Fee Related DE69516047T2 (de) 1994-06-27 1995-06-21 Vorrichtung zur Aktivierung einer Vorspannungsquelle

Country Status (5)

Country Link
US (1) US5892392A (de)
EP (1) EP0690575B1 (de)
JP (1) JP2779485B2 (de)
DE (1) DE69516047T2 (de)
FR (1) FR2721771B1 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3147079B2 (ja) * 1998-04-14 2001-03-19 日本電気株式会社 半導体回路
TWI420496B (zh) * 2010-02-12 2013-12-21 Raydium Semiconductor Corp 電壓比較器、包含該電壓比較器之液晶顯示裝置驅動電路及轉態加速方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4450367A (en) * 1981-12-14 1984-05-22 Motorola, Inc. Delta VBE bias current reference circuit
US4713560A (en) * 1986-06-05 1987-12-15 Fairchild Semiconductor Corporation Switched impedance emitter coupled logic gate
JP2724872B2 (ja) * 1989-04-12 1998-03-09 三菱電機株式会社 半導体集積回路用入力回路
US5038053A (en) * 1990-03-23 1991-08-06 Power Integrations, Inc. Temperature-compensated integrated circuit for uniform current generation
DE4034371C1 (de) * 1990-10-29 1991-10-31 Eurosil Electronic Gmbh, 8057 Eching, De
JP3001014B2 (ja) * 1991-03-13 2000-01-17 富士通株式会社 バイアス電圧発生回路
US5155384A (en) * 1991-05-10 1992-10-13 Samsung Semiconductor, Inc. Bias start-up circuit
JP3318365B2 (ja) * 1992-10-20 2002-08-26 富士通株式会社 定電圧回路
KR940017214A (ko) * 1992-12-24 1994-07-26 가나이 쓰토무 기준전압 발생회로
US5404096A (en) * 1993-06-17 1995-04-04 Texas Instruments Incorporated Switchable, uninterruptible reference generator with low bias current

Also Published As

Publication number Publication date
JPH0895653A (ja) 1996-04-12
FR2721771A1 (fr) 1995-12-29
EP0690575A1 (de) 1996-01-03
FR2721771B1 (fr) 1996-09-06
EP0690575B1 (de) 2000-04-05
DE69516047T2 (de) 2000-10-12
JP2779485B2 (ja) 1998-07-23
US5892392A (en) 1999-04-06

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee