DE69510826T2 - Flache abbildungsvorrichtung - Google Patents

Flache abbildungsvorrichtung

Info

Publication number
DE69510826T2
DE69510826T2 DE69510826T DE69510826T DE69510826T2 DE 69510826 T2 DE69510826 T2 DE 69510826T2 DE 69510826 T DE69510826 T DE 69510826T DE 69510826 T DE69510826 T DE 69510826T DE 69510826 T2 DE69510826 T2 DE 69510826T2
Authority
DE
Germany
Prior art keywords
image device
flat image
flat
image
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69510826T
Other languages
English (en)
Other versions
DE69510826D1 (de
Inventor
Zhong Huang
John Wright
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
iFire Technology Inc
Original Assignee
1294339 Ontario Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 1294339 Ontario Inc filed Critical 1294339 Ontario Inc
Application granted granted Critical
Publication of DE69510826D1 publication Critical patent/DE69510826D1/de
Publication of DE69510826T2 publication Critical patent/DE69510826T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
    • H01L29/78648—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate arranged on opposing sides of the channel
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
DE69510826T 1995-01-19 1995-01-19 Flache abbildungsvorrichtung Expired - Fee Related DE69510826T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CA1995/000030 WO1996022616A1 (en) 1995-01-19 1995-01-19 Flat panel imaging device

Publications (2)

Publication Number Publication Date
DE69510826D1 DE69510826D1 (de) 1999-08-19
DE69510826T2 true DE69510826T2 (de) 1999-11-11

Family

ID=4173066

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69510826T Expired - Fee Related DE69510826T2 (de) 1995-01-19 1995-01-19 Flache abbildungsvorrichtung

Country Status (6)

Country Link
US (1) US5917210A (de)
EP (1) EP0804807B1 (de)
JP (1) JPH11504761A (de)
CA (1) CA2208762C (de)
DE (1) DE69510826T2 (de)
WO (1) WO1996022616A1 (de)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6914642B2 (en) 1995-02-15 2005-07-05 Semiconductor Energy Laboratory Co., Ltd. Active matrix display device
DE19605669B4 (de) * 1995-02-15 2007-06-14 Semiconductor Energy Laboratory Co., Ltd., Atsugi Aktivmatrix-Anzeigevorrichtung

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2242743C (en) 1998-07-08 2002-12-17 Ftni Inc. Direct conversion digital x-ray detector with inherent high voltage protection for static and dynamic imaging
KR100284809B1 (ko) * 1999-03-18 2001-03-15 구본준 다결정실리콘 박막트랜지스터
WO2000068710A2 (en) 1999-05-10 2000-11-16 Lippens Francois Energy-selective x-ray radiation detection system
US6545291B1 (en) * 1999-08-31 2003-04-08 E Ink Corporation Transistor design for use in the construction of an electronically driven display
KR100299537B1 (ko) * 1999-08-31 2001-11-01 남상희 엑스-선 검출용 박막트랜지스터 기판 제조방법
JP2001313384A (ja) * 2000-04-28 2001-11-09 Shimadzu Corp 放射線検出器
DE10034873B4 (de) * 2000-07-18 2005-10-13 Pacifica Group Technologies Pty Ltd Verfahren und Bremsanlage zum Regeln des Bremsvorgangs bei einem Kraftfahrzeug
US6335214B1 (en) * 2000-09-20 2002-01-01 International Business Machines Corporation SOI circuit with dual-gate transistors
US6716684B1 (en) * 2000-11-13 2004-04-06 Advanced Micro Devices, Inc. Method of making a self-aligned triple gate silicon-on-insulator device
KR20030066051A (ko) * 2002-02-04 2003-08-09 일진다이아몬드(주) 폴리 박막 트랜지스터를 이용한 액정 디스플레이 장치
US20040085463A1 (en) * 2002-11-06 2004-05-06 Manish Sharma Imaging system with non-volatile memory
US7223641B2 (en) * 2004-03-26 2007-05-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for manufacturing the same, liquid crystal television and EL television
US7304308B2 (en) 2005-02-16 2007-12-04 Hologic, Inc. Amorphous selenium flat panel x-ray imager for tomosynthesis and static imaging
US7122803B2 (en) 2005-02-16 2006-10-17 Hologic, Inc. Amorphous selenium flat panel x-ray imager for tomosynthesis and static imaging
US7233005B2 (en) 2005-02-16 2007-06-19 Hologic, Inc. Amorphous selenium flat panel x-ray imager for tomosynthesis and static imaging
TWI336945B (en) 2006-06-15 2011-02-01 Au Optronics Corp Dual-gate transistor and pixel structure using the same
GB0707185D0 (en) * 2007-04-13 2007-05-23 Cambridge Silicon Radio Ltd Controlling amplifier input impedance
JP5602390B2 (ja) 2008-08-19 2014-10-08 富士フイルム株式会社 薄膜トランジスタ、アクティブマトリクス基板、及び撮像装置
KR101491714B1 (ko) * 2008-09-16 2015-02-16 삼성전자주식회사 반도체 소자 및 그 제조 방법
KR101694877B1 (ko) * 2009-10-16 2017-01-11 삼성전자주식회사 그라핀 소자 및 그 제조 방법
WO2011089841A1 (en) * 2010-01-22 2011-07-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI436322B (zh) 2010-09-14 2014-05-01 Ind Tech Res Inst 光敏電路以及光敏顯示器系統
US9257590B2 (en) 2010-12-20 2016-02-09 Industrial Technology Research Institute Photoelectric element, display unit and method for fabricating the same
US8988624B2 (en) 2011-06-23 2015-03-24 Apple Inc. Display pixel having oxide thin-film transistor (TFT) with reduced loading
KR101929834B1 (ko) * 2011-07-25 2018-12-18 삼성디스플레이 주식회사 박막 트랜지스터 기판, 이를 갖는 액정 표시 장치, 및 박막 트랜지스터 기판의 제조 방법
US20130207102A1 (en) * 2012-02-15 2013-08-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI533457B (zh) 2012-09-11 2016-05-11 元太科技工業股份有限公司 薄膜電晶體
CN104393020B (zh) * 2014-11-21 2017-07-04 京东方科技集团股份有限公司 一种阵列基板及其制备方法、显示装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56138961A (en) * 1980-04-01 1981-10-29 Ricoh Co Ltd Photoelectric conversion element
US4636038A (en) * 1983-07-09 1987-01-13 Canon Kabushiki Kaisha Electric circuit member and liquid crystal display device using said member
US4984040A (en) * 1989-06-15 1991-01-08 Xerox Corporation High voltage thin film transistor with second gate
JPH0555576A (ja) * 1991-08-29 1993-03-05 Fuji Xerox Co Ltd 薄膜トランジスタ
FR2691289A1 (fr) * 1992-05-15 1993-11-19 Thomson Csf Dispositif semiconducteur à effet de champ, procédé de réalisation et application à un dispositif à commande matricielle.
CN100477247C (zh) * 1994-06-02 2009-04-08 株式会社半导体能源研究所 有源矩阵显示器和电光元件

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6914642B2 (en) 1995-02-15 2005-07-05 Semiconductor Energy Laboratory Co., Ltd. Active matrix display device
DE19605634B4 (de) * 1995-02-15 2007-04-19 Semiconductor Energy Laboratory Co., Ltd., Atsugi Aktivmatrixanzeigegerät
DE19605669B4 (de) * 1995-02-15 2007-06-14 Semiconductor Energy Laboratory Co., Ltd., Atsugi Aktivmatrix-Anzeigevorrichtung
DE19605670B4 (de) * 1995-02-15 2007-06-28 Semiconductor Energy Laboratory Co., Ltd., Atsugi Aktivmatrixanzeigegerät

Also Published As

Publication number Publication date
EP0804807B1 (de) 1999-07-14
WO1996022616A1 (en) 1996-07-25
CA2208762C (en) 2003-03-18
JPH11504761A (ja) 1999-04-27
CA2208762A1 (en) 1996-07-25
EP0804807A1 (de) 1997-11-05
DE69510826D1 (de) 1999-08-19
US5917210A (en) 1999-06-29

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: IFIRE TECHNOLOGY INC., FORT SASKATCHEWAN, ALBERTA,

8339 Ceased/non-payment of the annual fee