DE69507875D1 - Laservorrichtung mit organischem Bragg-Reflektor und Herstellungsverfahren - Google Patents

Laservorrichtung mit organischem Bragg-Reflektor und Herstellungsverfahren

Info

Publication number
DE69507875D1
DE69507875D1 DE69507875T DE69507875T DE69507875D1 DE 69507875 D1 DE69507875 D1 DE 69507875D1 DE 69507875 T DE69507875 T DE 69507875T DE 69507875 T DE69507875 T DE 69507875T DE 69507875 D1 DE69507875 D1 DE 69507875D1
Authority
DE
Germany
Prior art keywords
organic
manufacturing process
laser device
bragg reflector
bragg
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69507875T
Other languages
English (en)
Other versions
DE69507875T2 (de
Inventor
Nouredine Bouadma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oclaro North America Inc
Original Assignee
France Telecom SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by France Telecom SA filed Critical France Telecom SA
Application granted granted Critical
Publication of DE69507875D1 publication Critical patent/DE69507875D1/de
Publication of DE69507875T2 publication Critical patent/DE69507875T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
    • H01S5/0612—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06256—Controlling the frequency of the radiation with DBR-structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/021—Silicon based substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
    • H01S5/1032—Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/125—Distributed Bragg reflector [DBR] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Optical Integrated Circuits (AREA)
  • Semiconductor Lasers (AREA)
DE69507875T 1994-12-20 1995-12-18 Laservorrichtung mit organischem Bragg-Reflektor und Herstellungsverfahren Expired - Fee Related DE69507875T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9415314A FR2728399B1 (fr) 1994-12-20 1994-12-20 Composant laser a reflecteur de bragg en materiau organique et procede pour sa realisation

Publications (2)

Publication Number Publication Date
DE69507875D1 true DE69507875D1 (de) 1999-03-25
DE69507875T2 DE69507875T2 (de) 1999-07-29

Family

ID=9469983

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69507875T Expired - Fee Related DE69507875T2 (de) 1994-12-20 1995-12-18 Laservorrichtung mit organischem Bragg-Reflektor und Herstellungsverfahren

Country Status (5)

Country Link
US (1) US5732102A (de)
EP (1) EP0720262B1 (de)
JP (1) JPH08250819A (de)
DE (1) DE69507875T2 (de)
FR (1) FR2728399B1 (de)

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US6324204B1 (en) 1999-10-19 2001-11-27 Sparkolor Corporation Channel-switched tunable laser for DWDM communications
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US6934313B1 (en) 1999-11-04 2005-08-23 Intel Corporation Method of making channel-aligned resonator devices
US6293688B1 (en) * 1999-11-12 2001-09-25 Sparkolor Corporation Tapered optical waveguide coupler
JP2001177182A (ja) * 1999-12-16 2001-06-29 Fujitsu Ltd 外部共振器型半導体レーザおよび光導波路装置
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US7023886B2 (en) 2001-11-08 2006-04-04 Intel Corporation Wavelength tunable optical components
US6690694B2 (en) 2001-11-08 2004-02-10 Intel Corporation Thermally wavelength tunable lasers
DE10158379B4 (de) * 2001-11-28 2010-01-07 Tem Messtechnik Gmbh Monofrequent durchstimmbarer Halbleiterlaser mit thermisch abgeglichenen Komponenten
US7027469B2 (en) * 2001-11-30 2006-04-11 Optitune Plc Tunable filter
US6782164B1 (en) 2002-01-31 2004-08-24 Intel Corporation Thermally wavelength tunable laser having selectively activated gratings
US6647032B1 (en) 2002-01-31 2003-11-11 Intel Corporation Thermally wavelength tunable laser having selectively activated gratings
US20050175044A1 (en) * 2002-03-19 2005-08-11 Nick Zakhleniuk Tuneable laser
GB2386965B (en) * 2002-03-27 2005-09-07 Bookham Technology Plc Electro-optic modulators
DE60306770D1 (de) * 2002-05-15 2006-08-24 Bookham Technology Ltd Abstimmbarer laser
US6920159B2 (en) * 2002-11-29 2005-07-19 Optitune Plc Tunable optical source
US6865209B2 (en) * 2003-02-24 2005-03-08 Quintessence Photonics Corporation Laser diode with a spatially varying electrostatic field frequency converter
US6790696B1 (en) * 2003-06-30 2004-09-14 Eastman Kodak Company Providing an organic vertical cavity laser array device with etched region in dielectric stack
JP4254430B2 (ja) * 2003-08-07 2009-04-15 ソニー株式会社 半導体装置の製造方法
US7639911B2 (en) * 2005-12-08 2009-12-29 Electronics And Telecommunications Research Institute Optical device having optical waveguide including organic Bragg grating sheet
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JP5219745B2 (ja) * 2007-11-14 2013-06-26 キヤノン株式会社 発光装置
CN101592762B (zh) * 2009-06-05 2012-07-04 中兴通讯股份有限公司 一种光模块及其控制方法
US9479280B2 (en) 2011-07-14 2016-10-25 Applied Optoelectronics, Inc. Extended cavity fabry-perot laser assembly capable of high speed optical modulation with narrow mode spacing and WDM optical system including same
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JP5790336B2 (ja) * 2011-09-01 2015-10-07 住友電気工業株式会社 半導体光集積素子
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US9238738B2 (en) * 2012-08-22 2016-01-19 Thermatin Industries, LLC Germanate-containing thermal barrier coating
US9306671B2 (en) 2012-12-07 2016-04-05 Applied Optoelectronics, Inc. Thermally isolated multi-channel transmitter optical subassembly and optical transceiver module including same
US9236945B2 (en) 2012-12-07 2016-01-12 Applied Optoelectronics, Inc. Thermally shielded multi-channel transmitter optical subassembly and optical transceiver module including same
US8831433B2 (en) 2012-12-07 2014-09-09 Applied Optoelectronics, Inc. Temperature controlled multi-channel transmitter optical subassembly and optical transceiver module including same
US9614620B2 (en) 2013-02-06 2017-04-04 Applied Optoelectronics, Inc. Coaxial transmitter optical subassembly (TOSA) with cuboid type to laser package and optical transceiver including same
US8995484B2 (en) 2013-02-22 2015-03-31 Applied Optoelectronics, Inc. Temperature controlled multi-channel transmitter optical subassembly and optical transceiver module including same
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WO2015128909A1 (ja) 2014-02-28 2015-09-03 パナソニックＩｐマネジメント株式会社 発光素子および発光装置
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Also Published As

Publication number Publication date
EP0720262B1 (de) 1999-02-17
EP0720262A1 (de) 1996-07-03
DE69507875T2 (de) 1999-07-29
US5732102A (en) 1998-03-24
FR2728399A1 (fr) 1996-06-21
FR2728399B1 (fr) 1997-03-14
JPH08250819A (ja) 1996-09-27

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: AVANEX CORP., FREMONT, CALIF., US

8339 Ceased/non-payment of the annual fee