DE69412666D1 - Gewinngekoppelter Halbleiterlaser mit verteilter Rückkoppelung und Herstellungsverfahren - Google Patents

Gewinngekoppelter Halbleiterlaser mit verteilter Rückkoppelung und Herstellungsverfahren

Info

Publication number
DE69412666D1
DE69412666D1 DE69412666T DE69412666T DE69412666D1 DE 69412666 D1 DE69412666 D1 DE 69412666D1 DE 69412666 T DE69412666 T DE 69412666T DE 69412666 T DE69412666 T DE 69412666T DE 69412666 D1 DE69412666 D1 DE 69412666D1
Authority
DE
Germany
Prior art keywords
gain
manufacturing process
semiconductor laser
distributed feedback
coupled semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69412666T
Other languages
English (en)
Other versions
DE69412666T2 (de
Inventor
Natsuhiko Mizutani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of DE69412666D1 publication Critical patent/DE69412666D1/de
Application granted granted Critical
Publication of DE69412666T2 publication Critical patent/DE69412666T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1228—DFB lasers with a complex coupled grating, e.g. gain or loss coupling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3077—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure plane dependent doping
    • H01S5/3081—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure plane dependent doping using amphoteric doping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3428—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers layer orientation perpendicular to the substrate
DE69412666T 1993-03-01 1994-02-24 Gewinngekoppelter Halbleiterlaser mit verteilter Rückkoppelung und Herstellungsverfahren Expired - Lifetime DE69412666T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP06476293A JP3204474B2 (ja) 1993-03-01 1993-03-01 利得結合分布帰還型半導体レーザとその作製方法

Publications (2)

Publication Number Publication Date
DE69412666D1 true DE69412666D1 (de) 1998-10-01
DE69412666T2 DE69412666T2 (de) 1999-03-11

Family

ID=13267526

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69412666T Expired - Lifetime DE69412666T2 (de) 1993-03-01 1994-02-24 Gewinngekoppelter Halbleiterlaser mit verteilter Rückkoppelung und Herstellungsverfahren

Country Status (4)

Country Link
US (1) US5703899A (de)
EP (1) EP0614254B1 (de)
JP (1) JP3204474B2 (de)
DE (1) DE69412666T2 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2308732A (en) * 1995-12-29 1997-07-02 Sharp Kk A semiconductor laser device
US6072812A (en) * 1997-08-01 2000-06-06 Lucent Technologies Inc. Distributed feedback laser with loss coupling
JP4375834B2 (ja) * 1998-03-19 2009-12-02 シャープ株式会社 利得結合型分布帰還半導体レーザ装置及びその製造方法
US6330265B1 (en) * 1998-04-21 2001-12-11 Kabushiki Kaisha Toshiba Optical functional element and transmission device
JP3643486B2 (ja) * 1998-08-04 2005-04-27 株式会社東芝 光機能素子及び光通信システム
EP1586148A4 (de) * 2003-01-24 2006-05-31 California Inst Of Techn TRAVERS-BRACK-RESONANZLASER UND VERSTûRKER UND VERFAHREN ZUDEREN BETRIEB
US6911674B2 (en) * 2003-04-16 2005-06-28 Zeolux Corporation Feedback and coupling structures and methods
JP4951267B2 (ja) * 2006-04-27 2012-06-13 日本オプネクスト株式会社 半導体レーザ素子の製造方法
JP6186865B2 (ja) * 2013-05-08 2017-08-30 富士通株式会社 光半導体装置及び光半導体装置の製造方法
JP2016184705A (ja) * 2015-03-26 2016-10-20 富士通株式会社 半導体光素子およびその製造方法
US10126499B2 (en) * 2015-06-30 2018-11-13 Stmicroelectronics Sa Electro-optic device with semiconductor junction area and related methods
US11133649B2 (en) * 2019-06-21 2021-09-28 Palo Alto Research Center Incorporated Index and gain coupled distributed feedback laser
CN113540974A (zh) * 2021-07-20 2021-10-22 苏州大学 一种增益耦合分布反馈式半导体激光器及其制作方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4445218A (en) * 1981-09-28 1984-04-24 Bell Telephone Laboratories, Incorporated Semiconductor laser with conductive current mask
JPS62173786A (ja) * 1986-01-28 1987-07-30 Sony Corp 分布帰還型半導体レ−ザ
US4932033A (en) * 1986-09-26 1990-06-05 Canon Kabushiki Kaisha Semiconductor laser having a lateral p-n junction utilizing inclined surface and method of manufacturing same
JP2606838B2 (ja) * 1987-03-27 1997-05-07 三菱電機株式会社 分布帰還型半導体レーザ
JPH01124279A (ja) * 1987-11-09 1989-05-17 Matsushita Electric Ind Co Ltd 分布帰還型レーザ
JP2713445B2 (ja) * 1988-11-25 1998-02-16 古河電気工業株式会社 半導体レーザ素子
JPH05145169A (ja) * 1990-09-05 1993-06-11 Hikari Keisoku Gijutsu Kaihatsu Kk 半導体分布帰還型レーザ装置
EP0582986B1 (de) * 1992-08-10 1999-01-20 Canon Kabushiki Kaisha Halbleitervorrichtung und Herstellungsverfahren

Also Published As

Publication number Publication date
JP3204474B2 (ja) 2001-09-04
EP0614254A1 (de) 1994-09-07
EP0614254B1 (de) 1998-08-26
US5703899A (en) 1997-12-30
DE69412666T2 (de) 1999-03-11
JPH06252510A (ja) 1994-09-09

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