DE69428284D1 - Verfahren zur herstellung von verbundenen wafern unter verwendung von diamant als isolator - Google Patents

Verfahren zur herstellung von verbundenen wafern unter verwendung von diamant als isolator

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Publication number
DE69428284D1
DE69428284D1 DE69428284T DE69428284T DE69428284D1 DE 69428284 D1 DE69428284 D1 DE 69428284D1 DE 69428284 T DE69428284 T DE 69428284T DE 69428284 T DE69428284 T DE 69428284T DE 69428284 D1 DE69428284 D1 DE 69428284D1
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DE
Germany
Prior art keywords
diamond
insulator
connected wafers
producing connected
producing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69428284T
Other languages
English (en)
Other versions
DE69428284T2 (de
Inventor
Gregory A Schrantz
H Linn
W Belcher
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Harris Corp
Original Assignee
Harris Corp
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Filing date
Publication date
Application filed by Harris Corp filed Critical Harris Corp
Application granted granted Critical
Publication of DE69428284D1 publication Critical patent/DE69428284D1/de
Publication of DE69428284T2 publication Critical patent/DE69428284T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • Y10S148/00—Metal treatment
    • Y10S148/012—Bonding, e.g. electrostatic for strain gauges
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/135—Removal of substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/973—Substrate orientation

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  • Engineering & Computer Science (AREA)
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  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Element Separation (AREA)
DE69428284T 1993-03-11 1994-03-09 Verfahren zur herstellung von verbundenen wafern unter verwendung von diamant als isolator Expired - Fee Related DE69428284T2 (de)

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US08/029,860 US5272104A (en) 1993-03-11 1993-03-11 Bonded wafer process incorporating diamond insulator
PCT/US1994/002569 WO1994020985A1 (en) 1993-03-11 1994-03-09 Bonded wafer process incorporating diamond insulator

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JPH09500493A (ja) 1997-01-14
EP0719452B1 (de) 2001-09-12
WO1994020985A1 (en) 1994-09-15
US5650639A (en) 1997-07-22
DE69428284T2 (de) 2002-06-27
EP0719452A1 (de) 1996-07-03
US5272104A (en) 1993-12-21

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