DE69426817D1 - Fertigungprüfungsverfahren von Flash-EEPROM-Vorrichtungen - Google Patents

Fertigungprüfungsverfahren von Flash-EEPROM-Vorrichtungen

Info

Publication number
DE69426817D1
DE69426817D1 DE69426817T DE69426817T DE69426817D1 DE 69426817 D1 DE69426817 D1 DE 69426817D1 DE 69426817 T DE69426817 T DE 69426817T DE 69426817 T DE69426817 T DE 69426817T DE 69426817 D1 DE69426817 D1 DE 69426817D1
Authority
DE
Germany
Prior art keywords
memory cells
memory
flash eeprom
defective
redundancy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69426817T
Other languages
English (en)
Other versions
DE69426817T2 (de
Inventor
Stefano Mazzali
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
STMicroelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SRL filed Critical STMicroelectronics SRL
Application granted granted Critical
Publication of DE69426817D1 publication Critical patent/DE69426817D1/de
Publication of DE69426817T2 publication Critical patent/DE69426817T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/80—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout
    • G11C29/816—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout for an application-specific layout
    • G11C29/82—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout for an application-specific layout for EEPROMs
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/10—Test algorithms, e.g. memory scan [MScan] algorithms; Test patterns, e.g. checkerboard patterns 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/18—Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
    • G11C29/24—Accessing extra cells, e.g. dummy cells or redundant cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/52—Protection of memory contents; Detection of errors in memory contents

Landscapes

  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Tests Of Electronic Circuits (AREA)
  • Semiconductor Memories (AREA)
DE69426817T 1994-06-07 1994-06-07 Fertigungprüfungsverfahren von Flash-EEPROM-Vorrichtungen Expired - Fee Related DE69426817T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP94830276A EP0686978B1 (de) 1994-06-07 1994-06-07 Fertigungprüfungsverfahren von Flash-EEPROM-Vorrichtungen

Publications (2)

Publication Number Publication Date
DE69426817D1 true DE69426817D1 (de) 2001-04-12
DE69426817T2 DE69426817T2 (de) 2001-08-02

Family

ID=8218462

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69426817T Expired - Fee Related DE69426817T2 (de) 1994-06-07 1994-06-07 Fertigungprüfungsverfahren von Flash-EEPROM-Vorrichtungen

Country Status (4)

Country Link
US (1) US5590075A (de)
EP (1) EP0686978B1 (de)
JP (1) JPH0855499A (de)
DE (1) DE69426817T2 (de)

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US5965902A (en) * 1995-09-19 1999-10-12 Micron Technology Method and apparatus for testing of dielectric defects in a packaged semiconductor memory device
US5657284A (en) 1995-09-19 1997-08-12 Micron Technology, Inc. Apparatus and method for testing for defects between memory cells in packaged semiconductor memory devices
JPH0997500A (ja) * 1995-09-29 1997-04-08 Toshiba Corp 不揮発性半導体記憶装置
US5781486A (en) * 1996-04-16 1998-07-14 Micron Technology Corporation Apparatus for testing redundant elements in a packaged semiconductor memory device
US5793943A (en) * 1996-07-29 1998-08-11 Micron Electronics, Inc. System for a primary BIOS ROM recovery in a dual BIOS ROM computer system
US5841712A (en) * 1996-09-30 1998-11-24 Advanced Micro Devices, Inc. Dual comparator circuit and method for selecting between normal and redundant decode logic in a semiconductor memory device
KR100250756B1 (ko) 1996-12-04 2000-05-01 김영환 플래쉬 이이피롬 셀의 특성 분석을 위한 테스트 셀 및 이를 이용한 플래쉬 이이피롬 셀의 특성 분석 방법
US5883904A (en) * 1997-04-14 1999-03-16 International Business Machines Corporation Method for recoverability via redundant cache arrays
US6031772A (en) * 1997-06-20 2000-02-29 Oki Electric Industry Co., Ltd. Semiconductor memory device having floating gate transistors
US5986950A (en) * 1997-10-15 1999-11-16 International Business Machines Corporation Use of redundant circuits to improve the reliability of an integrated circuit
DE19808525A1 (de) * 1998-02-27 1999-09-02 Siemens Ag Integrierte Schaltung
US6091652A (en) * 1998-12-11 2000-07-18 Lsi Logic Corporation Testing semiconductor devices for data retention
US6452845B1 (en) 1999-01-07 2002-09-17 Micron Technology, Inc. Apparatus for testing redundant elements in a packaged semiconductor memory device
US6147904A (en) * 1999-02-04 2000-11-14 Tower Semiconductor Ltd. Redundancy method and structure for 2-bit non-volatile memory cells
DE19963689A1 (de) * 1999-12-29 2001-07-12 Infineon Technologies Ag Schaltungsanordnung eines integrierten Halbleiterspeichers zum Speichern von Adressen fehlerhafter Speicherzellen
JP3893005B2 (ja) * 2000-01-06 2007-03-14 富士通株式会社 不揮発性半導体記憶装置
JP4413406B2 (ja) * 2000-10-03 2010-02-10 株式会社東芝 不揮発性半導体メモリ及びそのテスト方法
US6704236B2 (en) * 2002-01-03 2004-03-09 Broadcom Corporation Method and apparatus for verification of a gate oxide fuse element
US7053647B2 (en) * 2004-05-07 2006-05-30 Taiwan Semiconductor Manufacturing Co., Ltd. Method of detecting potential bridging effects between conducting lines in an integrated circuit
US7768847B2 (en) 2008-04-09 2010-08-03 Rambus Inc. Programmable memory repair scheme
JP2012234591A (ja) * 2011-04-28 2012-11-29 Toshiba Corp 不揮発性半導体記憶装置
EP3367385B1 (de) 2017-02-28 2020-07-08 ams AG Speicheranordnung und verfahren zum betrieb einer speicheranordnung
US20190013387A1 (en) * 2017-07-05 2019-01-10 Micron Technology, Inc. Memory cell structures
CN113409857B (zh) * 2021-05-11 2024-04-05 珠海博雅科技股份有限公司 参考单元替换方法、装置及存储介质

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Publication number Priority date Publication date Assignee Title
JPS525491A (en) * 1975-07-03 1977-01-17 Nippon Steel Corp Leading-in process of conduit tube
JPS59227095A (ja) * 1983-06-07 1984-12-20 Hitachi Ltd 半導体記憶素子のスクリ−ニング方法
JPS605087A (ja) * 1983-06-21 1985-01-11 ティーディーケイ株式会社 導電性ペ−スト組成物
EP0198935A1 (de) * 1985-04-23 1986-10-29 Deutsche ITT Industries GmbH Elektrisch umprogrammierbarer Halbleiterspeicher mit Redundanz
JP2631651B2 (ja) * 1986-12-10 1997-07-16 株式会社 アドバンテスト 自己診断機能を具備した記憶装置
US5053990A (en) * 1988-02-17 1991-10-01 Intel Corporation Program/erase selection for flash memory
US5023874A (en) * 1989-02-23 1991-06-11 Texas Instruments Incorporated Screening logic circuits for preferred states
EP0392895B1 (de) * 1989-04-13 1995-12-13 Sundisk Corporation EEprom-System mit Blocklöschung
US4963825A (en) 1989-12-21 1990-10-16 Intel Corporation Method of screening EPROM-related devices for endurance failure
EP0944094B1 (de) * 1991-12-09 2001-10-24 Fujitsu Limited Versorgungsspannungsschalter
JP2738195B2 (ja) * 1991-12-27 1998-04-08 日本電気株式会社 不揮発性半導体記憶装置
JPH05205491A (ja) * 1992-01-28 1993-08-13 Mitsubishi Electric Corp 不揮発性半導体記憶装置
JPH065087A (ja) * 1992-06-24 1994-01-14 Mitsubishi Electric Corp 不揮発性半導体記憶装置
JPH06251593A (ja) * 1993-02-24 1994-09-09 Matsushita Electron Corp フラッシュメモリの消去あるいは書き込み制御方法
US5400286A (en) * 1993-08-17 1995-03-21 Catalyst Semiconductor Corp. Self-recovering erase scheme to enhance flash memory endurance

Also Published As

Publication number Publication date
EP0686978A1 (de) 1995-12-13
DE69426817T2 (de) 2001-08-02
JPH0855499A (ja) 1996-02-27
US5590075A (en) 1996-12-31
EP0686978B1 (de) 2001-03-07

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee