DE69423447T2 - Siliziumnitridteil mit hoher Wärmeleitfähigkeit, Halbleitergehäuse, Heizung und thermischer Kopf - Google Patents

Siliziumnitridteil mit hoher Wärmeleitfähigkeit, Halbleitergehäuse, Heizung und thermischer Kopf

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Publication number
DE69423447T2
DE69423447T2 DE69423447T DE69423447T DE69423447T2 DE 69423447 T2 DE69423447 T2 DE 69423447T2 DE 69423447 T DE69423447 T DE 69423447T DE 69423447 T DE69423447 T DE 69423447T DE 69423447 T2 DE69423447 T2 DE 69423447T2
Authority
DE
Germany
Prior art keywords
heating
silicon nitride
thermal conductivity
semiconductor housing
high thermal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69423447T
Other languages
English (en)
Other versions
DE69423447D1 (de
Inventor
Michiyasu Komatsu
Yoshitoshi Sato
Katsuhiro Shinosawa
Mineyuki Yamaga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP05333596A external-priority patent/JP3089926B2/ja
Priority claimed from JP33359593A external-priority patent/JP3445342B2/ja
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE69423447D1 publication Critical patent/DE69423447D1/de
Application granted granted Critical
Publication of DE69423447T2 publication Critical patent/DE69423447T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
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    • H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
    • H05B3/12—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
    • H05B3/14—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
    • H05B3/148—Silicon, e.g. silicon carbide, magnesium silicide, heating transistors or diodes
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    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
    • C04B35/584—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicon nitride
    • C04B35/593—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicon nitride obtained by pressure sintering
    • C04B35/5935—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicon nitride obtained by pressure sintering obtained by gas pressure sintering
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Ceramic Products (AREA)
DE69423447T 1993-12-27 1994-12-27 Siliziumnitridteil mit hoher Wärmeleitfähigkeit, Halbleitergehäuse, Heizung und thermischer Kopf Expired - Fee Related DE69423447T2 (de)

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JP05333596A JP3089926B2 (ja) 1993-12-27 1993-12-27 ヒーターおよびサーマルヘッド
JP33359593A JP3445342B2 (ja) 1993-12-27 1993-12-27 高熱伝導性窒化けい素構造部材および半導体パッケージ

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DE69423447D1 DE69423447D1 (de) 2000-04-20
DE69423447T2 true DE69423447T2 (de) 2000-12-07

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US (1) US5698896A (de)
EP (1) EP0660397B1 (de)
KR (1) KR0143870B1 (de)
DE (1) DE69423447T2 (de)

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US6046499A (en) * 1996-03-27 2000-04-04 Kabushiki Kaisha Toshiba Heat transfer configuration for a semiconductor device
WO1998008256A1 (en) * 1996-08-20 1998-02-26 Kabushiki Kaisha Toshiba Silicon nitride circuit board and semiconductor module
US5909058A (en) * 1996-09-25 1999-06-01 Kabushiki Kaisha Toshiba Semiconductor package and semiconductor mounting part
JPH11335158A (ja) 1998-03-24 1999-12-07 Sumitomo Electric Ind Ltd セラミックス基板及びその研磨方法
JP4346151B2 (ja) * 1998-05-12 2009-10-21 株式会社東芝 高熱伝導性窒化けい素焼結体およびそれを用いた回路基板並びに集積回路
BR9900253A (pt) 1999-02-02 2000-08-29 Companhia Brasileira Carbureto Recipiente de alumìnio e aço inoxidável a formação de eletrodos de autocozimento para a utilização em baixos-fornos elétricos de redução
BR9900252A (pt) 1999-02-02 2000-08-29 Companhia Brasileira Carbureto Recipiente de aço inoxidável para a formação de eletrodos de autocozimento para a utilização em baixos-fornos elétricos de redução
US6391812B1 (en) * 1999-06-23 2002-05-21 Ngk Insulators, Ltd. Silicon nitride sintered body and method of producing the same
DE10010461A1 (de) * 2000-03-03 2001-09-13 Infineon Technologies Ag Vorrichtung zum Verpacken elektronischer Bauteile mittels Spritzgußtechnik
US6613443B2 (en) * 2000-10-27 2003-09-02 Kabushiki Kaisha Toshiba Silicon nitride ceramic substrate, silicon nitride ceramic circuit board using the substrate, and method of manufacturing the substrate
CN102951905B (zh) * 2003-09-25 2016-02-17 株式会社东芝 氮化硅耐磨部件及其制造方法
KR100510556B1 (ko) * 2003-11-11 2005-08-26 삼성전자주식회사 초박형 반도체 패키지 및 그 제조방법
DE102004003119A1 (de) * 2004-01-21 2005-08-11 BSH Bosch und Siemens Hausgeräte GmbH Vorrichtung zum Erwärmen von Speisen mittels induktiver Kopplung und Vorrichtung zur Übertragung von Energie
US7019390B2 (en) * 2004-02-03 2006-03-28 Visteon Global Technologies, Inc. Silicon nitride insulating substrate for power semiconductor module
US8579513B2 (en) * 2006-09-13 2013-11-12 Kabushiki Kaisha Toshiba Slide member and bearing utilizing the same
TWM328763U (en) * 2007-05-21 2008-03-11 Univ Nat Taiwan Structure of heat dissipation substrate
US8304660B2 (en) * 2008-02-07 2012-11-06 National Taiwan University Fully reflective and highly thermoconductive electronic module and method of manufacturing the same
RU2495060C1 (ru) * 2012-07-04 2013-10-10 Федеральное государственное унитарное предприятие Особое конструкторско-технологическое бюро "ОРИОН" Антифрикционный композиционный материал
CN105129720A (zh) * 2015-07-25 2015-12-09 中国科学院地质与地球物理研究所 Mems传感器的封装结构及封装方法
US10062636B2 (en) * 2016-06-27 2018-08-28 Newport Fab, Llc Integration of thermally conductive but electrically isolating layers with semiconductor devices
WO2019060402A1 (en) 2017-09-21 2019-03-28 Avx Corporation ELECTRICALLY INSULATING THERMAL CONNECTOR HAVING LOW THERMAL RESISTIVITY

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Publication number Publication date
KR950021438A (ko) 1995-07-26
DE69423447D1 (de) 2000-04-20
EP0660397A2 (de) 1995-06-28
EP0660397B1 (de) 2000-03-15
EP0660397A3 (de) 1996-03-27
US5698896A (en) 1997-12-16
KR0143870B1 (ko) 1998-07-01

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