DE69422550D1 - Verfahren zur plasmaunterstützten chemischen Abscheidung von Schichten aus der Dampfphase unter Verbesserung der Zwischenflächen - Google Patents

Verfahren zur plasmaunterstützten chemischen Abscheidung von Schichten aus der Dampfphase unter Verbesserung der Zwischenflächen

Info

Publication number
DE69422550D1
DE69422550D1 DE69422550T DE69422550T DE69422550D1 DE 69422550 D1 DE69422550 D1 DE 69422550D1 DE 69422550 T DE69422550 T DE 69422550T DE 69422550 T DE69422550 T DE 69422550T DE 69422550 D1 DE69422550 D1 DE 69422550D1
Authority
DE
Germany
Prior art keywords
interfaces
plasma
improvement
layers
vapor phase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69422550T
Other languages
English (en)
Other versions
DE69422550T2 (de
Inventor
Robert Robertson
Marc Michael Kollrack
Angela T Lee
Takako Takehara
Guofu Jeff Feng
Robert Connolly
Kam Law
Dan Maydan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Application granted granted Critical
Publication of DE69422550D1 publication Critical patent/DE69422550D1/de
Publication of DE69422550T2 publication Critical patent/DE69422550T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
    • C23C16/0245—Pretreatment of the material to be coated by cleaning or etching by etching with a plasma
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
DE69422550T 1993-06-21 1994-06-21 Verfahren zur plasmaunterstützten chemischen Abscheidung von Schichten aus der Dampfphase unter Verbesserung der Zwischenflächen Expired - Fee Related DE69422550T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US8001993A 1993-06-21 1993-06-21

Publications (2)

Publication Number Publication Date
DE69422550D1 true DE69422550D1 (de) 2000-02-17
DE69422550T2 DE69422550T2 (de) 2000-08-10

Family

ID=22154736

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69422550T Expired - Fee Related DE69422550T2 (de) 1993-06-21 1994-06-21 Verfahren zur plasmaunterstützten chemischen Abscheidung von Schichten aus der Dampfphase unter Verbesserung der Zwischenflächen

Country Status (4)

Country Link
EP (1) EP0630989B1 (de)
JP (1) JPH07142416A (de)
KR (1) KR100326488B1 (de)
DE (1) DE69422550T2 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6291343B1 (en) 1994-11-14 2001-09-18 Applied Materials, Inc. Plasma annealing of substrates to improve adhesion
FR2756663B1 (fr) * 1996-12-04 1999-02-26 Berenguer Marc Procede de traitement d'un substrat semi-conducteur comprenant une etape de traitement de surface
US6872429B1 (en) 1997-06-30 2005-03-29 Applied Materials, Inc. Deposition of tungsten nitride using plasma pretreatment in a chemical vapor deposition chamber
US6162715A (en) 1997-06-30 2000-12-19 Applied Materials, Inc. Method of forming gate electrode connection structure by in situ chemical vapor deposition of tungsten and tungsten nitride
US20010049181A1 (en) 1998-11-17 2001-12-06 Sudha Rathi Plasma treatment for cooper oxide reduction
US6355571B1 (en) 1998-11-17 2002-03-12 Applied Materials, Inc. Method and apparatus for reducing copper oxidation and contamination in a semiconductor device
US6821571B2 (en) 1999-06-18 2004-11-23 Applied Materials Inc. Plasma treatment to enhance adhesion and to minimize oxidation of carbon-containing layers
JP2001044187A (ja) * 1999-07-30 2001-02-16 Furontekku:Kk プラズマ成膜方法および半導体装置の製造装置
KR100467082B1 (ko) * 2000-03-02 2005-01-24 주성엔지니어링(주) 반도체소자 제조장치 및 그 클리닝방법
US6794311B2 (en) 2000-07-14 2004-09-21 Applied Materials Inc. Method and apparatus for treating low k dielectric layers to reduce diffusion
CN101038863B (zh) * 2001-02-15 2011-07-06 东京毅力科创株式会社 被处理件的处理方法及处理装置
JP4573162B2 (ja) * 2004-09-16 2010-11-04 富士電機システムズ株式会社 透明導電膜の製造方法
KR100710597B1 (ko) * 2004-12-08 2007-04-24 주식회사 에이디피엔지니어링 플라즈마 처리장치
ITMI20092107A1 (it) * 2009-11-30 2011-06-01 Milano Politecnico Metodo e apparato per la deposizione di strati sottili nanostrutturati con morfologia e nanostruttura controllata
GB201218697D0 (en) * 2012-10-18 2012-11-28 Spts Technologies Ltd A method of depositing an amorphous silicon film
CN107464743A (zh) * 2017-07-17 2017-12-12 上海华虹宏力半导体制造有限公司 非晶硅薄膜成膜方法
CN107919272A (zh) * 2017-11-21 2018-04-17 上海华虹宏力半导体制造有限公司 非晶硅薄膜成膜方法
CN109148263A (zh) * 2018-07-26 2019-01-04 上海华虹宏力半导体制造有限公司 沉积非晶硅的成膜方法
CN109166795A (zh) * 2018-08-20 2019-01-08 上海华虹宏力半导体制造有限公司 TiN电极薄膜形成方法
CN109285759B (zh) * 2018-09-11 2021-08-20 上海华虹宏力半导体制造有限公司 非晶硅的成膜方法
CN114664651A (zh) 2020-12-23 2022-06-24 长鑫存储技术有限公司 半导体表面缺陷的处理方法和半导体器件的制备方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5821324A (ja) * 1981-07-30 1983-02-08 Agency Of Ind Science & Technol 水素添加した半導体薄膜成長用金属表面基板の前処理方法
DE3574997D1 (de) * 1984-03-03 1990-02-01 Stc Plc Pulsierendes plasmaverfahren.
CH671407A5 (de) * 1986-06-13 1989-08-31 Balzers Hochvakuum
DE4005956C1 (de) * 1990-02-26 1991-06-06 Siegfried Dipl.-Ing. Dr. 5135 Selfkant De Straemke
FR2664294B1 (fr) * 1990-07-06 1992-10-23 Plasmametal Procede de metallisation d'une surface.
DE4034842A1 (de) * 1990-11-02 1992-05-07 Thyssen Edelstahlwerke Ag Verfahren zur plasmachemischen reinigung fuer eine anschliessende pvd oder pecvd beschichtung

Also Published As

Publication number Publication date
DE69422550T2 (de) 2000-08-10
KR100326488B1 (ko) 2002-06-20
EP0630989A2 (de) 1994-12-28
EP0630989B1 (de) 2000-01-12
EP0630989A3 (de) 1996-01-03
JPH07142416A (ja) 1995-06-02
KR950000922A (ko) 1995-01-03

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee