DE69421749T2 - Halbleiterschalter mit IGBT und Thyristor - Google Patents

Halbleiterschalter mit IGBT und Thyristor

Info

Publication number
DE69421749T2
DE69421749T2 DE69421749T DE69421749T DE69421749T2 DE 69421749 T2 DE69421749 T2 DE 69421749T2 DE 69421749 T DE69421749 T DE 69421749T DE 69421749 T DE69421749 T DE 69421749T DE 69421749 T2 DE69421749 T2 DE 69421749T2
Authority
DE
Germany
Prior art keywords
thyristor
igbt
semiconductor switch
semiconductor
switch
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69421749T
Other languages
English (en)
Other versions
DE69421749D1 (de
Inventor
Hideo Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP5100712A external-priority patent/JP2797890B2/ja
Priority claimed from JP30411993A external-priority patent/JPH07161967A/ja
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of DE69421749D1 publication Critical patent/DE69421749D1/de
Application granted granted Critical
Publication of DE69421749T2 publication Critical patent/DE69421749T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744—Gate-turn-off devices
    • H01L29/745—Gate-turn-off devices with turn-off by field effect
    • H01L29/7455—Gate-turn-off devices with turn-off by field effect produced by an insulated gate structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/749—Thyristor-type devices, e.g. having four-zone regenerative action with turn-on by field effect

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
DE69421749T 1993-04-27 1994-04-25 Halbleiterschalter mit IGBT und Thyristor Expired - Fee Related DE69421749T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP5100712A JP2797890B2 (ja) 1993-04-27 1993-04-27 複合半導体装置
JP30411993A JPH07161967A (ja) 1993-12-03 1993-12-03 複合半導体装置

Publications (2)

Publication Number Publication Date
DE69421749D1 DE69421749D1 (de) 1999-12-30
DE69421749T2 true DE69421749T2 (de) 2000-06-08

Family

ID=26441687

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69421749T Expired - Fee Related DE69421749T2 (de) 1993-04-27 1994-04-25 Halbleiterschalter mit IGBT und Thyristor

Country Status (3)

Country Link
US (1) US5621226A (de)
EP (1) EP0622854B1 (de)
DE (1) DE69421749T2 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0736909A3 (de) * 1995-04-05 1997-10-08 Fuji Electric Co Ltd Thyristor mit isoliertem Gate
JP3298385B2 (ja) * 1995-04-05 2002-07-02 富士電機株式会社 絶縁ゲート型サイリスタ
JPH10125896A (ja) * 1996-10-16 1998-05-15 Fuji Electric Co Ltd 絶縁ゲート型サイリスタ

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57206279A (en) * 1981-06-12 1982-12-17 Hitachi Ltd Gto inverter device
US4857983A (en) * 1987-05-19 1989-08-15 General Electric Company Monolithically integrated semiconductor device having bidirectional conducting capability and method of fabrication
US4847671A (en) * 1987-05-19 1989-07-11 General Electric Company Monolithically integrated insulated gate semiconductor device
DE58905355D1 (de) * 1988-04-22 1993-09-30 Asea Brown Boveri Abschaltbares Leistungshalbleiterbauelement.
US4958211A (en) * 1988-09-01 1990-09-18 General Electric Company MCT providing turn-off control of arbitrarily large currents
DE4025122A1 (de) * 1989-10-24 1991-04-25 Asea Brown Boveri Abschaltbares leistungshalbleiter-bauelement in form eines mos-gesteuerten thyristors mct
JPH0529607A (ja) * 1991-07-23 1993-02-05 Fuji Electric Co Ltd Ｍｉｓゲート制御型サイリスタ半導体装置
GB2267996B (en) * 1992-06-01 1996-04-17 Fuji Electric Co Ltd Semiconductor device

Also Published As

Publication number Publication date
DE69421749D1 (de) 1999-12-30
US5621226A (en) 1997-04-15
EP0622854A1 (de) 1994-11-02
EP0622854B1 (de) 1999-11-24

Similar Documents

Publication Publication Date Title
DE69309193D1 (de) Halbleiteranordnung mit isoliertem Gate
GB2259608B (en) Power switching semiconductor device including si thyristor and mosfet connected in cascade
DE69534483D1 (de) Leiterrahmen und Halbleiterbauelement
DE59309712D1 (de) Thyristor mit Durchbruchbereich
DE69230795T2 (de) Vernetzungsmittel und vernetzbare zusammensetzung
DE69408248T2 (de) Bipolares Halbleiterbauelement und Herstellungsverfahren
DE69611858D1 (de) Schalt- und Versorgungsmodule mit Thyristoren
DE69428657T2 (de) Halbleiter-Schutzbauelement mit Shockley-Dioden
DE59711264D1 (de) Thyristor mit durchbruchbereich
DE69223390D1 (de) Statischer Induktionsthyristor mit MOS
DE69421749D1 (de) Halbleiterschalter mit IGBT und Thyristor
DE59713039D1 (de) Thyristor mit integriertem du/dt-schutz
DE69327135D1 (de) Halbleiteranordnung mit mehreren Halbleiterchips
DE69500782T2 (de) Thyristor mit isoliertem Gate
DE69032766T2 (de) Gate Turn-off-Thyristor
DE69428506T2 (de) Thermoplastische Olefincopolymere und Mischungen daraus
DE69419965T2 (de) Hyperfrequenz-Halbleiteranordnung mit Stabilisierungsmitteln
DE69516952D1 (de) Thyristor mit isoliertem Gate
EP0555047A3 (en) Semiconductor gated switching device
DE59306018D1 (de) GTO-Thyristor
DE59404986D1 (de) MOS-gesteuertes Leistungshalbleiterbauelement
DE69534458D1 (de) Gate-Turn-off-Thyristor
DE69430774T2 (de) Rückwärts leitender Gate-Turnoff-Thyristor
DE69400249D1 (de) MOS-kontrollierter Thyristor
DE69228721D1 (de) Thyristor mit isoliertem Gate

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee