DE69223390D1 - Statischer Induktionsthyristor mit MOS - Google Patents

Statischer Induktionsthyristor mit MOS

Info

Publication number
DE69223390D1
DE69223390D1 DE69223390T DE69223390T DE69223390D1 DE 69223390 D1 DE69223390 D1 DE 69223390D1 DE 69223390 T DE69223390 T DE 69223390T DE 69223390 T DE69223390 T DE 69223390T DE 69223390 D1 DE69223390 D1 DE 69223390D1
Authority
DE
Germany
Prior art keywords
mos
static induction
induction thyristor
thyristor
static
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69223390T
Other languages
English (en)
Other versions
DE69223390T2 (de
Inventor
Jun-Ichi Nishizawa
Sohbe Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Zaidan Hojin Handotai Kenkyu Shinkokai
Original Assignee
Zaidan Hojin Handotai Kenkyu Shinkokai
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Zaidan Hojin Handotai Kenkyu Shinkokai filed Critical Zaidan Hojin Handotai Kenkyu Shinkokai
Publication of DE69223390D1 publication Critical patent/DE69223390D1/de
Application granted granted Critical
Publication of DE69223390T2 publication Critical patent/DE69223390T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7391—Gated diode structures
    • H01L29/7392—Gated diode structures with PN junction gate, e.g. field controlled thyristors (FCTh), static induction thyristors (SITh)

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
DE69223390T 1992-01-16 1992-09-16 Statischer Induktionsthyristor mit MOS Expired - Fee Related DE69223390T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4025637A JPH081953B2 (ja) 1992-01-16 1992-01-16 Ｍｏｓ複合静電誘導サイリスタ

Publications (2)

Publication Number Publication Date
DE69223390D1 true DE69223390D1 (de) 1998-01-15
DE69223390T2 DE69223390T2 (de) 1998-06-25

Family

ID=12171372

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69223390T Expired - Fee Related DE69223390T2 (de) 1992-01-16 1992-09-16 Statischer Induktionsthyristor mit MOS

Country Status (5)

Country Link
US (1) US5323028A (de)
EP (1) EP0551569B1 (de)
JP (1) JPH081953B2 (de)
CN (1) CN1044172C (de)
DE (1) DE69223390T2 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4429284A1 (de) * 1994-08-18 1996-02-22 Siemens Ag Halbleiterbauelement mit zwei monolithisch integrierten Schaltelementen und einem vergrabenen strukturierten Steuergebiet
WO1998012755A1 (fr) * 1996-09-17 1998-03-26 Ngk Insulators, Ltd. Dispositif semi-conducteur
WO1999007019A1 (de) * 1997-08-01 1999-02-11 Siemens Aktiengesellschaft Dreipol-hochvolt-schalter
JPH11297981A (ja) * 1998-04-15 1999-10-29 Hitachi Ltd 複合半導体装置及びそれを使った電力変換装置
EP1691413A1 (de) * 2005-02-11 2006-08-16 Axalto SA Falschungssichere elektronische Komponente
US7619257B2 (en) * 2006-02-16 2009-11-17 Alcatel-Lucent Usa Inc. Devices including graphene layers epitaxially grown on single crystal substrates
DE102008023126B4 (de) * 2007-05-09 2012-08-30 Infineon Technologies Ag Schaltkreis und Verfahren zum Schalten einer Verbindung
SE533026C2 (sv) * 2008-04-04 2010-06-08 Klas-Haakan Eklund Fälteffekttransistor med isolerad gate seriekopplad med en JFET
CN102651392B (zh) * 2011-02-28 2014-11-05 成都成电知力微电子设计有限公司 一种控制两种载流子的晶闸管
US8785988B1 (en) * 2013-01-11 2014-07-22 Macronix International Co., Ltd. N-channel metal-oxide field effect transistor with embedded high voltage junction gate field-effect transistor
JP6572123B2 (ja) * 2015-12-22 2019-09-04 ニチコン株式会社 ゲート駆動回路
US11004970B2 (en) * 2019-05-20 2021-05-11 Nxp Usa, Inc. Mirror device structure for power MOSFET and method of manufacture

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4985738A (en) * 1978-01-06 1991-01-15 Zaidan Hojin Handotai Kenkyu Shinkokai Semiconductor switching device
US4945266A (en) * 1987-11-18 1990-07-31 Mitsubishi Denki Kabushiki Kaisha Composite semiconductor device
JPH0226276A (ja) * 1988-07-15 1990-01-29 Matsushita Electric Works Ltd 放電灯点灯装置
JPH0318054A (ja) * 1989-06-15 1991-01-25 Toyota Autom Loom Works Ltd 半導体装置

Also Published As

Publication number Publication date
US5323028A (en) 1994-06-21
CN1044172C (zh) 1999-07-14
EP0551569A1 (de) 1993-07-21
JPH081953B2 (ja) 1996-01-10
DE69223390T2 (de) 1998-06-25
EP0551569B1 (de) 1997-12-03
JPH05190840A (ja) 1993-07-30
CN1075030A (zh) 1993-08-04

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee