DE69421522T2 - Verfahren zur reparatur einer leitung eines dünnfilm-bildsensors oder einer dünnfilm-anzeige und die dadurch hergestellte struktur - Google Patents

Verfahren zur reparatur einer leitung eines dünnfilm-bildsensors oder einer dünnfilm-anzeige und die dadurch hergestellte struktur

Info

Publication number
DE69421522T2
DE69421522T2 DE69421522T DE69421522T DE69421522T2 DE 69421522 T2 DE69421522 T2 DE 69421522T2 DE 69421522 T DE69421522 T DE 69421522T DE 69421522 T DE69421522 T DE 69421522T DE 69421522 T2 DE69421522 T2 DE 69421522T2
Authority
DE
Germany
Prior art keywords
repairing
display
thin film
line
image sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69421522T
Other languages
English (en)
Other versions
DE69421522D1 (de
Inventor
Roger Salisbury
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Application granted granted Critical
Publication of DE69421522D1 publication Critical patent/DE69421522D1/de
Publication of DE69421522T2 publication Critical patent/DE69421522T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5382Adaptable interconnections, e.g. for engineering changes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76886Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
    • H01L21/76892Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances modifying the pattern
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/1306Details
    • G02F1/1309Repairing; Testing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
DE69421522T 1993-12-20 1994-12-15 Verfahren zur reparatur einer leitung eines dünnfilm-bildsensors oder einer dünnfilm-anzeige und die dadurch hergestellte struktur Expired - Fee Related DE69421522T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US16926093A 1993-12-20 1993-12-20
PCT/US1994/014541 WO1995017768A1 (en) 1993-12-20 1994-12-15 Address line repair structure and method for thin film imager devices

Publications (2)

Publication Number Publication Date
DE69421522D1 DE69421522D1 (de) 1999-12-09
DE69421522T2 true DE69421522T2 (de) 2000-08-10

Family

ID=22614886

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69421522T Expired - Fee Related DE69421522T2 (de) 1993-12-20 1994-12-15 Verfahren zur reparatur einer leitung eines dünnfilm-bildsensors oder einer dünnfilm-anzeige und die dadurch hergestellte struktur

Country Status (5)

Country Link
US (1) US5480812A (de)
EP (1) EP0685113B1 (de)
JP (1) JP3671056B2 (de)
DE (1) DE69421522T2 (de)
WO (1) WO1995017768A1 (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5648296A (en) * 1994-07-27 1997-07-15 General Electric Company Post-fabrication repair method for thin film imager devices
KR100197114B1 (ko) * 1995-07-19 1999-06-15 김영환 메모리 소자 집적 다이의 층결함의 3차원 검사 방법
US5834321A (en) * 1995-12-18 1998-11-10 General Electric Company Low noise address line repair method for thin film imager devices
US5731803A (en) * 1995-12-21 1998-03-24 Xerox Corporation Array with light active units sized to eliminate artifact from size difference
US5608245A (en) * 1995-12-21 1997-03-04 Xerox Corporation Array on substrate with repair line crossing lines in the array
US5616524A (en) * 1995-12-22 1997-04-01 General Electric Company Repair method for low noise metal lines in thin film imager devices
JP2000512804A (ja) 1996-05-08 2000-09-26 1294339 オンタリオ インコーポレーテッド 放射線画像用高精細度フラット・パネル
US5741727A (en) * 1997-05-23 1998-04-21 Industrial Technology Research Institute Circuit modification and repair using a low resistance conducting metal bridge and a focused ion beam
US5976978A (en) * 1997-12-22 1999-11-02 General Electric Company Process for repairing data transmission lines of imagers
JP2000046645A (ja) * 1998-07-31 2000-02-18 Canon Inc 光電変換装置及びその製造方法及びx線撮像装置
US6486470B2 (en) 1998-11-02 2002-11-26 1294339 Ontario, Inc. Compensation circuit for use in a high resolution amplified flat panel for radiation imaging
JP4653867B2 (ja) * 1999-06-30 2011-03-16 エーユー オプトロニクス コーポレイション 電子部品の欠陥修復方法
US6392257B1 (en) * 2000-02-10 2002-05-21 Motorola Inc. Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same
US6674168B1 (en) * 2003-01-21 2004-01-06 International Business Machines Corporation Single and multilevel rework
KR20070117738A (ko) * 2006-06-09 2007-12-13 삼성전자주식회사 표시기판의 리페어 방법 및 이에 의해 리페어된 표시기판
JP5282381B2 (ja) * 2007-08-13 2013-09-04 株式会社島津製作所 光マトリックスデバイスの製造方法
DE102009044022A1 (de) * 2009-09-16 2011-03-24 Reis Gmbh & Co. Kg Maschinenfabrik Verfahren zum Reparieren eines elektrischen Kontakts
US20120228275A1 (en) * 2009-06-29 2012-09-13 Reis Group Holding Gmbh & Co. Kg Method for exposing an electrical contact
JP5313984B2 (ja) * 2010-09-14 2013-10-09 エーユー オプトロニクス コーポレイション 電子部品の欠陥修復装置
KR102216675B1 (ko) 2014-06-12 2021-02-18 삼성디스플레이 주식회사 디스플레이 패널의 리페어 장치 및 디스플레이 패널의 리페어 방법

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3597834A (en) * 1968-02-14 1971-08-10 Texas Instruments Inc Method in forming electrically continuous circuit through insulating layer
US4688896A (en) * 1985-03-04 1987-08-25 General Electric Company Information conversion device with auxiliary address lines for enhancing manufacturing yield
US4630355A (en) * 1985-03-08 1986-12-23 Energy Conversion Devices, Inc. Electric circuits having repairable circuit lines and method of making the same
FR2585167B1 (fr) * 1985-07-19 1993-05-07 Gen Electric Structures conductrices redondantes pour affichages a cristaux liquides commandes par des transistors a effet de champ en couche mince
JPH0766253B2 (ja) * 1986-06-20 1995-07-19 松下電器産業株式会社 マトリクス型画像表示装置
JPS63102342A (ja) * 1986-10-20 1988-05-07 Mitsubishi Electric Corp 半導体集積回路装置の配線構造
JPH0691252B2 (ja) * 1986-11-27 1994-11-14 日本電気株式会社 薄膜トランジスタアレイ
JPH01102434A (ja) * 1987-10-15 1989-04-20 Sharp Corp マトリックス型液晶表示パネル
US4840459A (en) * 1987-11-03 1989-06-20 General Electric Co. Matrix addressed flat panel liquid crystal display device with dual ended auxiliary repair lines for address line repair
JPH01191829A (ja) * 1988-01-27 1989-08-01 Mitsubishi Electric Corp 液晶表示装置
JPH02157828A (ja) * 1988-12-12 1990-06-18 Hosiden Electron Co Ltd 液晶表示素子
US4990460A (en) * 1989-01-27 1991-02-05 Nec Corporation Fabrication method for thin film field effect transistor array suitable for liquid crystal display
JPH0823643B2 (ja) * 1989-03-28 1996-03-06 シャープ株式会社 アクティブマトリクス表示装置
US5062690A (en) * 1989-06-30 1991-11-05 General Electric Company Liquid crystal display with redundant FETS and redundant crossovers connected by laser-fusible links
US5153408A (en) * 1990-10-31 1992-10-06 International Business Machines Corporation Method and structure for repairing electrical lines
US5246745A (en) * 1991-12-23 1993-09-21 International Business Machines Corporation Laser-induced chemical vapor deposition of thin-film conductors
JPH05216053A (ja) * 1992-02-04 1993-08-27 Seiko Epson Corp 画像表示装置の修正方法及びその構造
US5289632A (en) * 1992-11-25 1994-03-01 International Business Machines Corporation Applying conductive lines to integrated circuits

Also Published As

Publication number Publication date
EP0685113B1 (de) 1999-11-03
EP0685113A1 (de) 1995-12-06
DE69421522D1 (de) 1999-12-09
JP3671056B2 (ja) 2005-07-13
JPH08507180A (ja) 1996-07-30
US5480812A (en) 1996-01-02
WO1995017768A1 (en) 1995-06-29

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Representative=s name: ROEGER UND KOLLEGEN, 73728 ESSLINGEN

8339 Ceased/non-payment of the annual fee