DE69331533T2 - Verteilter Reflektor und Halbleiterlaser mit abstimmbarer Wellenlänge - Google Patents

Verteilter Reflektor und Halbleiterlaser mit abstimmbarer Wellenlänge

Info

Publication number
DE69331533T2
DE69331533T2 DE69331533T DE69331533T DE69331533T2 DE 69331533 T2 DE69331533 T2 DE 69331533T2 DE 69331533 T DE69331533 T DE 69331533T DE 69331533 T DE69331533 T DE 69331533T DE 69331533 T2 DE69331533 T2 DE 69331533T2
Authority
DE
Germany
Prior art keywords
semiconductor laser
tunable wavelength
distributed reflector
reflector
distributed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69331533T
Other languages
English (en)
Other versions
DE69331533D1 (de
Inventor
Yuichi Tohmori
Yuzo Yoshikuni
Hiroyuki Ishii
Fumiyoshi Kano
Toshiaki Tamamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP20898692A external-priority patent/JP2690840B2/ja
Priority claimed from JP4213084A external-priority patent/JP2770897B2/ja
Priority claimed from JP21769392A external-priority patent/JP2770900B2/ja
Priority claimed from JP4222718A external-priority patent/JP2832920B2/ja
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Application granted granted Critical
Publication of DE69331533D1 publication Critical patent/DE69331533D1/de
Publication of DE69331533T2 publication Critical patent/DE69331533T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • G02B6/124—Geodesic lenses or integrated gratings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06256—Controlling the frequency of the radiation with DBR-structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06258—Controlling the frequency of the radiation with DFB-structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12083—Constructional arrangements
    • G02B2006/12107—Grating
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12083—Constructional arrangements
    • G02B2006/12121—Laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
    • H01S5/1215—Multiplicity of periods
    • H01S5/1218—Multiplicity of periods in superstructured configuration, e.g. more than one period in an alternate sequence
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1225—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers with a varying coupling constant along the optical axis
DE69331533T 1992-03-06 1993-03-04 Verteilter Reflektor und Halbleiterlaser mit abstimmbarer Wellenlänge Expired - Lifetime DE69331533T2 (de)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP4942592 1992-03-06
JP14411792 1992-06-04
JP20898692A JP2690840B2 (ja) 1992-08-05 1992-08-05 分布光反射器及びそれを用いた波長可変半導体レーザ
JP4213084A JP2770897B2 (ja) 1992-08-10 1992-08-10 半導体分布反射器及びそれを用いた半導体レーザ
JP21769392A JP2770900B2 (ja) 1992-08-17 1992-08-17 分布反射器及びそれを用いた波長可変半導体レーザ
JP4222718A JP2832920B2 (ja) 1992-03-06 1992-08-21 波長掃引機能付き半導体レーザ

Publications (2)

Publication Number Publication Date
DE69331533D1 DE69331533D1 (de) 2002-03-14
DE69331533T2 true DE69331533T2 (de) 2002-07-11

Family

ID=27550366

Family Applications (2)

Application Number Title Priority Date Filing Date
DE69325118T Expired - Lifetime DE69325118T2 (de) 1992-03-06 1993-03-04 Verteilter Reflektor und Halbleiterlaser mit abstimmbarer Wellenlänge
DE69331533T Expired - Lifetime DE69331533T2 (de) 1992-03-06 1993-03-04 Verteilter Reflektor und Halbleiterlaser mit abstimmbarer Wellenlänge

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE69325118T Expired - Lifetime DE69325118T2 (de) 1992-03-06 1993-03-04 Verteilter Reflektor und Halbleiterlaser mit abstimmbarer Wellenlänge

Country Status (3)

Country Link
US (1) US5325392A (de)
EP (2) EP0847116B1 (de)
DE (2) DE69325118T2 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009026449B4 (de) * 2009-05-25 2014-04-30 Universität Kassel Optische Dünnschichtstruktur mit einer verteilten Kavität

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EP0484923B1 (de) * 1990-11-07 1994-04-13 Nippon Telegraph And Telephone Corporation Halbleiter-Wellenlängenwandler

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009026449B4 (de) * 2009-05-25 2014-04-30 Universität Kassel Optische Dünnschichtstruktur mit einer verteilten Kavität

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DE69325118D1 (de) 1999-07-08
EP0559192A2 (de) 1993-09-08
DE69325118T2 (de) 2000-05-31
EP0847116A2 (de) 1998-06-10
US5325392A (en) 1994-06-28
EP0559192A3 (en) 1993-09-22
EP0559192B1 (de) 1999-06-02
EP0847116B1 (de) 2002-01-30
EP0847116A3 (de) 1998-09-02
DE69331533D1 (de) 2002-03-14

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