DE4330987B4 - Halbleiterlaser mit Strom- und Lichteingrenzstruktur - Google Patents

Halbleiterlaser mit Strom- und Lichteingrenzstruktur Download PDF

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Publication number
DE4330987B4
DE4330987B4 DE4330987A DE4330987A DE4330987B4 DE 4330987 B4 DE4330987 B4 DE 4330987B4 DE 4330987 A DE4330987 A DE 4330987A DE 4330987 A DE4330987 A DE 4330987A DE 4330987 B4 DE4330987 B4 DE 4330987B4
Authority
DE
Germany
Prior art keywords
current
semiconductor laser
confinement structure
light confinement
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE4330987A
Other languages
English (en)
Other versions
DE4330987A1 (de
Inventor
Haruhisa Takiguchi
Kazuhiko Inoguchi
Hiroaki Kudo
Satoshi Sugahara
Mototaka Taneya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Publication of DE4330987A1 publication Critical patent/DE4330987A1/de
Application granted granted Critical
Publication of DE4330987B4 publication Critical patent/DE4330987B4/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2206—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on III-V materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32316—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm comprising only (Al)GaAs

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE4330987A 1992-09-14 1993-09-13 Halbleiterlaser mit Strom- und Lichteingrenzstruktur Expired - Fee Related DE4330987B4 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4245079A JP2914833B2 (ja) 1992-09-14 1992-09-14 半導体レーザ

Publications (2)

Publication Number Publication Date
DE4330987A1 DE4330987A1 (de) 1994-03-31
DE4330987B4 true DE4330987B4 (de) 2007-05-16

Family

ID=17128289

Family Applications (1)

Application Number Title Priority Date Filing Date
DE4330987A Expired - Fee Related DE4330987B4 (de) 1992-09-14 1993-09-13 Halbleiterlaser mit Strom- und Lichteingrenzstruktur

Country Status (3)

Country Link
US (1) US5361271A (de)
JP (1) JP2914833B2 (de)
DE (1) DE4330987B4 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2914847B2 (ja) * 1993-07-09 1999-07-05 株式会社東芝 半導体レーザ装置
JP2699888B2 (ja) * 1994-09-20 1998-01-19 日本電気株式会社 埋め込み型ｐ型基板半導体レーザ
JPH08222815A (ja) * 1994-12-13 1996-08-30 Mitsubishi Electric Corp 半導体レーザ装置の製造方法、及び半導体レーザ装置
JP3714984B2 (ja) * 1995-03-06 2005-11-09 シャープ株式会社 分布帰還型半導体レーザ装置
JP2929990B2 (ja) * 1996-01-26 1999-08-03 日本電気株式会社 半導体レーザ
JPH09237933A (ja) * 1996-02-29 1997-09-09 Mitsubishi Electric Corp 半導体レーザ，及びその製造方法
US5987048A (en) 1996-07-26 1999-11-16 Kabushiki Kaisha Toshiba Gallium nitride-based compound semiconductor laser and method of manufacturing the same
JPH1098234A (ja) * 1996-09-25 1998-04-14 Mitsubishi Electric Corp 半導体レーザ，及びその製造方法
JP2001053384A (ja) * 1999-08-05 2001-02-23 Fuji Photo Film Co Ltd 半導体レーザ装置およびその製造方法
US6400743B1 (en) * 1999-08-05 2002-06-04 Fuji Photo Film Co., Ltd. High-power semiconductor laser device having current confinement structure and index-guided structure
JP4804623B2 (ja) * 1999-12-10 2011-11-02 古河電気工業株式会社 半導体レーザ素子
US6690701B2 (en) 1999-12-10 2004-02-10 The Furukawa Electric Co., Ltd. Semiconductor laser device
DE60033369T2 (de) * 1999-12-28 2007-11-29 Sanyo Electric Co., Ltd., Moriguchi Halbleiterlaservorrichtung
US8530784B2 (en) * 2007-02-01 2013-09-10 Orbotech Ltd. Method and system of machining using a beam of photons

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0025362A2 (de) * 1979-09-11 1981-03-18 Fujitsu Limited Licht emittierende Halbleitervorrichtung
DE3410793A1 (de) * 1983-03-24 1984-10-04 Hitachi, Ltd., Tokio/Tokyo Halbleiter-laservorrichtung
JPH01304793A (ja) * 1988-06-01 1989-12-08 Mitsubishi Electric Corp 半導体レーザ装置の製造方法
US5058120A (en) * 1990-02-28 1991-10-15 Kabushiki Kaisha Toshiba Visible light emitting semiconductor laser with inverse mesa-shaped groove section
US5144633A (en) * 1990-05-24 1992-09-01 Matsushita Electric Industrial Co., Ltd. Semiconductor laser and manufacturing method thereof

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4416012A (en) * 1981-11-19 1983-11-15 Rca Corporation W-Guide buried heterostructure laser
US4581742A (en) * 1984-04-10 1986-04-08 Rca Corporation Semiconductor laser having a non-absorbing passive region with beam guiding
US4860298A (en) * 1988-04-12 1989-08-22 Dan Botez Phased-locked array of semiconductor lasers using closely spaced antiguides
JPH01289184A (ja) * 1988-05-16 1989-11-21 Mitsubishi Electric Corp 半導体レーザ装置の製造方法
JPH01289185A (ja) * 1988-05-16 1989-11-21 Mitsubishi Electric Corp 半導体レーザ装置の製造方法
JPH02202085A (ja) * 1989-01-31 1990-08-10 Mitsubishi Electric Corp 半導体レーザ装置の製造方法
US5276700A (en) * 1992-03-12 1994-01-04 Trw Inc. 2-D monolithic coherent semiconductor laser array

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0025362A2 (de) * 1979-09-11 1981-03-18 Fujitsu Limited Licht emittierende Halbleitervorrichtung
DE3410793A1 (de) * 1983-03-24 1984-10-04 Hitachi, Ltd., Tokio/Tokyo Halbleiter-laservorrichtung
JPH01304793A (ja) * 1988-06-01 1989-12-08 Mitsubishi Electric Corp 半導体レーザ装置の製造方法
US5058120A (en) * 1990-02-28 1991-10-15 Kabushiki Kaisha Toshiba Visible light emitting semiconductor laser with inverse mesa-shaped groove section
US5144633A (en) * 1990-05-24 1992-09-01 Matsushita Electric Industrial Co., Ltd. Semiconductor laser and manufacturing method thereof

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
COLEMAN, J.J., DAPKAS, P.D.: Single-Lougitadiual- mode metalorganic Chemical-Vapor-deposition self- aligued GaAlAs-GaAs double-heterostructur lasers in Us-Z.: Appl. Phys. Lett., Vol.37, Nr.3, 1980, S.262-263 *
DE-Buch:EBELING, K.J.: Integrierte Optoelektronik,Springer-Verlag, Berlin Heidelberg 1989, S.307-309ISBN 0-387-51300-0 *
ISCHIKAWA, H. et al.: Mide-Stabilized Separated multiclad layer stripe geometry Ga Al As double heterostructure laser, in US-Z.: Apple Phys. Lett.Vol.36, Nr.7, 1980, S.520-522 *
YAMAMATO, S. et al.: Visible Ga Al As V-chammeled ssubstrate inner stripe laser with stabilized modeusing p-Ga As substrate, in US-Z.: Appl. Phys. Lett., Vol.40, Nr.5, 1982, S.372-374 *

Also Published As

Publication number Publication date
JPH0697575A (ja) 1994-04-08
JP2914833B2 (ja) 1999-07-05
US5361271A (en) 1994-11-01
DE4330987A1 (de) 1994-03-31

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OP8 Request for examination as to paragraph 44 patent law
8128 New person/name/address of the agent

Representative=s name: PATENTANWAELTE MUELLER & HOFFMANN, 81667 MUENCHEN

8364 No opposition during term of opposition
R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee

Effective date: 20110401