AU2003240967A1 - Single-mode dbr laser with improved phase-shift section and method for fabricating same - Google Patents

Single-mode dbr laser with improved phase-shift section and method for fabricating same

Info

Publication number
AU2003240967A1
AU2003240967A1 AU2003240967A AU2003240967A AU2003240967A1 AU 2003240967 A1 AU2003240967 A1 AU 2003240967A1 AU 2003240967 A AU2003240967 A AU 2003240967A AU 2003240967 A AU2003240967 A AU 2003240967A AU 2003240967 A1 AU2003240967 A1 AU 2003240967A1
Authority
AU
Australia
Prior art keywords
shift section
dbr laser
improved phase
fabricating same
mode dbr
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003240967A
Inventor
Klaus Alexander Anselm
Wen-Yen Hwang
Jun Zheng
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Optoelectronics Inc
Original Assignee
Applied Optoelectronics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/159,361 external-priority patent/US6638773B1/en
Priority claimed from US10/159,347 external-priority patent/US6608855B1/en
Application filed by Applied Optoelectronics Inc filed Critical Applied Optoelectronics Inc
Publication of AU2003240967A1 publication Critical patent/AU2003240967A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1082—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region with a special facet structure, e.g. structured, non planar, oblique
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1203—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers over only a part of the length of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/124—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers incorporating phase shifts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/124—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers incorporating phase shifts
    • H01S5/1243—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers incorporating phase shifts by other means than a jump in the grating period, e.g. bent waveguides

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
AU2003240967A 2002-05-31 2003-05-29 Single-mode dbr laser with improved phase-shift section and method for fabricating same Abandoned AU2003240967A1 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US10/159,361 US6638773B1 (en) 2002-05-31 2002-05-31 Method for fabricating single-mode DBR laser with improved yield
US10/159,347 US6608855B1 (en) 2002-05-31 2002-05-31 Single-mode DBR laser with improved phase-shift section
US10/159,361 2002-05-31
US10/159,347 2002-05-31
PCT/US2003/017166 WO2003103107A1 (en) 2002-05-31 2003-05-29 Single-mode dbr laser with improved phase-shift section and method for fabricating same

Publications (1)

Publication Number Publication Date
AU2003240967A1 true AU2003240967A1 (en) 2003-12-19

Family

ID=29714712

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003240967A Abandoned AU2003240967A1 (en) 2002-05-31 2003-05-29 Single-mode dbr laser with improved phase-shift section and method for fabricating same

Country Status (3)

Country Link
EP (1) EP1509975A4 (en)
AU (1) AU2003240967A1 (en)
WO (1) WO2003103107A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7072516B2 (en) * 2016-10-12 2022-05-20 古河電気工業株式会社 Semiconductor laser device
CN112993751B (en) * 2021-01-28 2022-08-19 湖北光安伦芯片有限公司 Nano-column VCSEL light source structure and preparation method thereof

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61216383A (en) * 1985-03-20 1986-09-26 Nec Corp Distributed feedback semiconductor laser
JP2768940B2 (en) * 1987-07-08 1998-06-25 三菱電機株式会社 Single wavelength oscillation semiconductor laser device
US5325392A (en) * 1992-03-06 1994-06-28 Nippon Telegraph And Telephone Corporation Distributed reflector and wavelength-tunable semiconductor laser
JP3714430B2 (en) * 1996-04-15 2005-11-09 シャープ株式会社 Distributed feedback semiconductor laser device
JP3792331B2 (en) * 1997-01-27 2006-07-05 富士通株式会社 Optical semiconductor device manufacturing method and diffraction grating forming method
US20020181516A1 (en) * 2001-06-04 2002-12-05 Kamath Kishore K. Active phase tuning of DBR lasers
US6795472B2 (en) * 2002-02-05 2004-09-21 Lucent Technologies Inc. Laser with a resonant optical reflector

Also Published As

Publication number Publication date
WO2003103107A1 (en) 2003-12-11
EP1509975A4 (en) 2005-06-15
EP1509975A1 (en) 2005-03-02

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase