DE69330921T2 - Herstellungsverfahren von dünnem Film - Google Patents

Herstellungsverfahren von dünnem Film

Info

Publication number
DE69330921T2
DE69330921T2 DE69330921T DE69330921T DE69330921T2 DE 69330921 T2 DE69330921 T2 DE 69330921T2 DE 69330921 T DE69330921 T DE 69330921T DE 69330921 T DE69330921 T DE 69330921T DE 69330921 T2 DE69330921 T2 DE 69330921T2
Authority
DE
Germany
Prior art keywords
substrate
aluminum
thin film
hydrogen
electron beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69330921T
Other languages
German (de)
English (en)
Other versions
DE69330921D1 (de
Inventor
Kazuya Masu
Kazuo Tsubouchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of DE69330921D1 publication Critical patent/DE69330921D1/de
Application granted granted Critical
Publication of DE69330921T2 publication Critical patent/DE69330921T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/047—Coating on selected surface areas, e.g. using masks using irradiation by energy or particles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • H10P14/432—Chemical deposition, e.g. chemical vapour deposition [CVD] using selective deposition

Landscapes

  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Health & Medical Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Toxicology (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Semiconductor Memories (AREA)
  • Physical Vapour Deposition (AREA)
DE69330921T 1992-04-28 1993-04-27 Herstellungsverfahren von dünnem Film Expired - Lifetime DE69330921T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4136042A JP3048749B2 (ja) 1992-04-28 1992-04-28 薄膜形成方法

Publications (2)

Publication Number Publication Date
DE69330921D1 DE69330921D1 (de) 2001-11-22
DE69330921T2 true DE69330921T2 (de) 2002-04-25

Family

ID=15165822

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69330921T Expired - Lifetime DE69330921T2 (de) 1992-04-28 1993-04-27 Herstellungsverfahren von dünnem Film

Country Status (8)

Country Link
US (1) US5604153A (https=)
EP (1) EP0567985B1 (https=)
JP (1) JP3048749B2 (https=)
KR (1) KR0164614B1 (https=)
AT (1) ATE207241T1 (https=)
DE (1) DE69330921T2 (https=)
MY (1) MY112082A (https=)
TW (1) TW228603B (https=)

Families Citing this family (42)

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US5780362A (en) * 1996-06-04 1998-07-14 Wang; Qingfeng CoSi2 salicide method
JP3917698B2 (ja) * 1996-12-12 2007-05-23 株式会社半導体エネルギー研究所 レーザーアニール方法およびレーザーアニール装置
FR2757881B1 (fr) * 1996-12-31 1999-04-09 Univ Paris Curie Procede de traitement d'une surface d'un semi-conducteur, dispositif correspondant et semi-conducteur associe
JP3399814B2 (ja) 1997-11-27 2003-04-21 科学技術振興事業団 微細突起構造体の製造方法
US6273099B1 (en) * 1998-07-01 2001-08-14 Taiwan Semiconductor Manufacturing Company Simplified method for cleaning silicon wafers after application of laser marks
AU2001281595B2 (en) * 2000-08-30 2006-02-09 Newsouth Innovations Pty Limited Single molecule array on silicon substrate for quantum computer
AUPQ975900A0 (en) * 2000-08-30 2000-09-21 Unisearch Limited A process for the fabrication of a quantum computer
KR100396891B1 (ko) * 2001-03-21 2003-09-03 삼성전자주식회사 반도체 소자의 금속 배선 형성 방법
US6855584B2 (en) * 2001-03-29 2005-02-15 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US7253032B2 (en) 2001-04-20 2007-08-07 Semiconductor Energy Laboratory Co., Ltd. Method of flattening a crystallized semiconductor film surface by using a plate
JP4854866B2 (ja) * 2001-04-27 2012-01-18 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6787460B2 (en) * 2002-01-14 2004-09-07 Samsung Electronics Co., Ltd. Methods of forming metal layers in integrated circuit devices using selective deposition on edges of recesses and conductive contacts so formed
KR100455382B1 (ko) * 2002-03-12 2004-11-06 삼성전자주식회사 듀얼 다마신 구조를 가지는 반도체 소자의 금속 배선 형성방법
US20070117287A1 (en) * 2005-11-23 2007-05-24 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus
US9112003B2 (en) 2011-12-09 2015-08-18 Asm International N.V. Selective formation of metallic films on metallic surfaces
US9895715B2 (en) 2014-02-04 2018-02-20 Asm Ip Holding B.V. Selective deposition of metals, metal oxides, and dielectrics
US10047435B2 (en) 2014-04-16 2018-08-14 Asm Ip Holding B.V. Dual selective deposition
US9490145B2 (en) 2015-02-23 2016-11-08 Asm Ip Holding B.V. Removal of surface passivation
US10428421B2 (en) 2015-08-03 2019-10-01 Asm Ip Holding B.V. Selective deposition on metal or metallic surfaces relative to dielectric surfaces
US10566185B2 (en) 2015-08-05 2020-02-18 Asm Ip Holding B.V. Selective deposition of aluminum and nitrogen containing material
US10121699B2 (en) 2015-08-05 2018-11-06 Asm Ip Holding B.V. Selective deposition of aluminum and nitrogen containing material
US10814349B2 (en) 2015-10-09 2020-10-27 Asm Ip Holding B.V. Vapor phase deposition of organic films
US10695794B2 (en) 2015-10-09 2020-06-30 Asm Ip Holding B.V. Vapor phase deposition of organic films
US9981286B2 (en) * 2016-03-08 2018-05-29 Asm Ip Holding B.V. Selective formation of metal silicides
US11081342B2 (en) 2016-05-05 2021-08-03 Asm Ip Holding B.V. Selective deposition using hydrophobic precursors
US10373820B2 (en) 2016-06-01 2019-08-06 Asm Ip Holding B.V. Deposition of organic films
US10453701B2 (en) 2016-06-01 2019-10-22 Asm Ip Holding B.V. Deposition of organic films
US9803277B1 (en) 2016-06-08 2017-10-31 Asm Ip Holding B.V. Reaction chamber passivation and selective deposition of metallic films
US11430656B2 (en) 2016-11-29 2022-08-30 Asm Ip Holding B.V. Deposition of oxide thin films
US11094535B2 (en) 2017-02-14 2021-08-17 Asm Ip Holding B.V. Selective passivation and selective deposition
US11501965B2 (en) 2017-05-05 2022-11-15 Asm Ip Holding B.V. Plasma enhanced deposition processes for controlled formation of metal oxide thin films
JP7183187B2 (ja) 2017-05-16 2022-12-05 エーエスエム アイピー ホールディング ビー．ブイ． 誘電体上の酸化物の選択的ｐｅａｌｄ
US10900120B2 (en) 2017-07-14 2021-01-26 Asm Ip Holding B.V. Passivation against vapor deposition
JP7146690B2 (ja) 2018-05-02 2022-10-04 エーエスエム アイピー ホールディング ビー．ブイ． 堆積および除去を使用した選択的層形成
JP2020056104A (ja) 2018-10-02 2020-04-09 エーエスエム アイピー ホールディング ビー．ブイ． 選択的パッシベーションおよび選択的堆積
US12482648B2 (en) 2018-10-02 2025-11-25 Asm Ip Holding B.V. Selective passivation and selective deposition
US11965238B2 (en) 2019-04-12 2024-04-23 Asm Ip Holding B.V. Selective deposition of metal oxides on metal surfaces
US11139163B2 (en) 2019-10-31 2021-10-05 Asm Ip Holding B.V. Selective deposition of SiOC thin films
TWI865747B (zh) 2020-03-30 2024-12-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 在兩不同表面上同時選擇性沉積兩不同材料
TWI862807B (zh) 2020-03-30 2024-11-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 相對於金屬表面在介電表面上之氧化矽的選擇性沉積
TW202140832A (zh) 2020-03-30 2021-11-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 氧化矽在金屬表面上之選擇性沉積
US11613807B2 (en) * 2020-07-29 2023-03-28 The Curators Of The University Of Missouri Area selective nanoscale-thin layer deposition via precise functional group lithography

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1595659A (en) * 1978-05-25 1981-08-12 Standard Telephones Cables Ltd Providing conductive tracks on semiconductor devices
JPH0712015B2 (ja) * 1988-11-18 1995-02-08 新技術事業団 シリコン固体表面へのパターン形成法
US5196372A (en) * 1989-09-09 1993-03-23 Canon Kabushiki Kaisha Process for forming metal deposited film containing aluminum as main component by use of alkyl hydride
PT95232B (pt) * 1989-09-09 1998-06-30 Canon Kk Processo de producao de uma pelicula de aluminio depositada
JP2726118B2 (ja) * 1989-09-26 1998-03-11 キヤノン株式会社 堆積膜形成法
JP2721023B2 (ja) * 1989-09-26 1998-03-04 キヤノン株式会社 堆積膜形成法
US5217756A (en) * 1990-06-08 1993-06-08 Nec Corporation Selective chemical vapor deposition of aluminum, aluminum CVD materials and process for preparing the same
EP0465264B1 (en) * 1990-07-06 1998-12-09 Kazuo Tsubouchi Metal film forming method

Also Published As

Publication number Publication date
JP3048749B2 (ja) 2000-06-05
MY112082A (en) 2001-04-30
EP0567985A3 (en) 1994-05-18
KR930022602A (ko) 1993-11-24
DE69330921D1 (de) 2001-11-22
ATE207241T1 (de) 2001-11-15
EP0567985A2 (en) 1993-11-03
EP0567985B1 (en) 2001-10-17
KR0164614B1 (ko) 1999-02-01
US5604153A (en) 1997-02-18
JPH0629220A (ja) 1994-02-04
TW228603B (https=) 1994-08-21

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