DE69431698T2 - Einen Strahl schneller Atome verwendendes Verarbeitungsverfahren - Google Patents

Einen Strahl schneller Atome verwendendes Verarbeitungsverfahren

Info

Publication number
DE69431698T2
DE69431698T2 DE69431698T DE69431698T DE69431698T2 DE 69431698 T2 DE69431698 T2 DE 69431698T2 DE 69431698 T DE69431698 T DE 69431698T DE 69431698 T DE69431698 T DE 69431698T DE 69431698 T2 DE69431698 T2 DE 69431698T2
Authority
DE
Germany
Prior art keywords
jet
faster
atoms
processing method
processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69431698T
Other languages
English (en)
Other versions
DE69431698D1 (de
Inventor
Masahiro Hatakeyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ebara Corp
Original Assignee
Ebara Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ebara Corp filed Critical Ebara Corp
Application granted granted Critical
Publication of DE69431698D1 publication Critical patent/DE69431698D1/de
Publication of DE69431698T2 publication Critical patent/DE69431698T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
    • H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching for microworking, e.g. etching of gratings, trimming of electrical components
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K5/00—Irradiation devices
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H3/00—Production or acceleration of neutral particle beams, e.g. molecular or atomic beams

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma & Fusion (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Welding Or Cutting Using Electron Beams (AREA)
  • Laser Beam Processing (AREA)
  • Drying Of Semiconductors (AREA)
DE69431698T 1993-07-05 1994-07-04 Einen Strahl schneller Atome verwendendes Verarbeitungsverfahren Expired - Fee Related DE69431698T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP19207293 1993-07-05
JP15681194A JP3394602B2 (ja) 1993-07-05 1994-06-14 高速原子線を用いた加工方法

Publications (2)

Publication Number Publication Date
DE69431698D1 DE69431698D1 (de) 2002-12-19
DE69431698T2 true DE69431698T2 (de) 2003-08-21

Family

ID=26484470

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69431698T Expired - Fee Related DE69431698T2 (de) 1993-07-05 1994-07-04 Einen Strahl schneller Atome verwendendes Verarbeitungsverfahren

Country Status (5)

Country Link
US (1) US5708267A (de)
EP (1) EP0637901B1 (de)
JP (1) JP3394602B2 (de)
KR (1) KR100333430B1 (de)
DE (1) DE69431698T2 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE112010003115B4 (de) * 2009-07-30 2019-11-21 Hitachi High-Technologies Corporation Abschirmung für eine Ionenätzvorrichtung sowie Ionenätzvorrichtung

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5770123A (en) * 1994-09-22 1998-06-23 Ebara Corporation Method and apparatus for energy beam machining
EP0731490A3 (de) * 1995-03-02 1998-03-11 Ebara Corporation Ultrafeines Mikroherstellungsverfahren unter Verwendung eines Energiebündel
EP0732624B1 (de) * 1995-03-17 2001-10-10 Ebara Corporation Herstellungsverfahren mit einem Energiebündel
US6835317B2 (en) * 1997-11-04 2004-12-28 Ebara Corporation Method of making substrate with micro-protrusions or micro-cavities
US6671034B1 (en) * 1998-04-30 2003-12-30 Ebara Corporation Microfabrication of pattern imprinting
EP1160826A3 (de) * 2000-05-30 2006-12-13 Ebara Corporation Beschichten, Verändern und Ätzen eines Substrats mittels Teilchenbestrahlung
US6768110B2 (en) * 2000-06-21 2004-07-27 Gatan, Inc. Ion beam milling system and method for electron microscopy specimen preparation
US20020194750A1 (en) * 2001-06-21 2002-12-26 Feick William Kurt Footwear with interchangeable uppers
JP4681942B2 (ja) * 2005-05-25 2011-05-11 オリンパス株式会社 微小凹部の作製方法
JP4700692B2 (ja) * 2005-09-05 2011-06-15 パイオニア株式会社 被エッチング材の製造方法
US8595860B2 (en) * 2007-12-28 2013-11-26 Bruker Nano, Inc. Method of fabricating a probe device for a metrology instrument and a probe device produced thereby

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3860783A (en) * 1970-10-19 1975-01-14 Bell Telephone Labor Inc Ion etching through a pattern mask
GB2146168A (en) * 1983-09-05 1985-04-11 Philips Electronic Associated Electron image projector
US4789779A (en) * 1984-08-01 1988-12-06 The United States Of America As Represented By The Secretary Of Commerce Heat pipe oven molecular beam source
US5108543A (en) * 1984-11-07 1992-04-28 Hitachi, Ltd. Method of surface treatment
JPH0642456B2 (ja) * 1984-11-21 1994-06-01 株式会社日立製作所 表面光処理方法
US4774416A (en) * 1986-09-24 1988-09-27 Plaser Corporation Large cross-sectional area molecular beam source for semiconductor processing
KR960016218B1 (ko) * 1987-06-05 1996-12-07 가부시기가이샤 히다찌세이사꾸쇼 표면처리방법 및 그 장치
US5029222A (en) * 1987-09-02 1991-07-02 Fujitsu Limited Photoelectron image projection apparatus
US5316616A (en) * 1988-02-09 1994-05-31 Fujitsu Limited Dry etching with hydrogen bromide or bromine
FR2636773B1 (fr) * 1988-09-16 1990-10-26 Cgr Mev Dispositif d'irradiation double face d'un produit
JPH03257182A (ja) * 1990-03-07 1991-11-15 Hitachi Ltd 表面加工装置
JPH0724240B2 (ja) * 1991-03-05 1995-03-15 株式会社荏原製作所 高速原子線源
JPH0715808B2 (ja) * 1991-04-23 1995-02-22 株式会社荏原製作所 イオン中和器
JPH05326452A (ja) * 1991-06-10 1993-12-10 Kawasaki Steel Corp プラズマ処理装置及び方法
US5350480A (en) * 1993-07-23 1994-09-27 Aspect International, Inc. Surface cleaning and conditioning using hot neutral gas beam array

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE112010003115B4 (de) * 2009-07-30 2019-11-21 Hitachi High-Technologies Corporation Abschirmung für eine Ionenätzvorrichtung sowie Ionenätzvorrichtung

Also Published As

Publication number Publication date
US5708267A (en) 1998-01-13
JP3394602B2 (ja) 2003-04-07
JPH0768389A (ja) 1995-03-14
EP0637901A1 (de) 1995-02-08
EP0637901B1 (de) 2002-11-13
KR950004655A (ko) 1995-02-18
DE69431698D1 (de) 2002-12-19
KR100333430B1 (ko) 2002-09-19

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee