DE69322751D1 - Schmelzverbindungsprogrammierbarer Spannungsabwärtswandler - Google Patents

Schmelzverbindungsprogrammierbarer Spannungsabwärtswandler

Info

Publication number
DE69322751D1
DE69322751D1 DE69322751T DE69322751T DE69322751D1 DE 69322751 D1 DE69322751 D1 DE 69322751D1 DE 69322751 T DE69322751 T DE 69322751T DE 69322751 T DE69322751 T DE 69322751T DE 69322751 D1 DE69322751 D1 DE 69322751D1
Authority
DE
Germany
Prior art keywords
buck converter
fusible link
link programmable
programmable buck
fusible
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69322751T
Other languages
English (en)
Other versions
DE69322751T2 (de
Inventor
Michael V Cordoba
Kim C Hardee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
UMC Japan Co Ltd
United Memories Inc
Original Assignee
Nippon Steel Semiconductor Corp
United Memories Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Steel Semiconductor Corp, United Memories Inc filed Critical Nippon Steel Semiconductor Corp
Publication of DE69322751D1 publication Critical patent/DE69322751D1/de
Application granted granted Critical
Publication of DE69322751T2 publication Critical patent/DE69322751T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/205—Substrate bias-voltage generators
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current
    • G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
    • G05F1/462—Regulating voltage or current wherein the variable actually regulated by the final control device is dc as a function of the requirements of the load, e.g. delay, temperature, specific voltage/current characteristic
    • G05F1/465—Internal voltage generators for integrated circuits, e.g. step down generators
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
    • G11C5/146—Substrate bias generators
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Nonlinear Science (AREA)
  • Dram (AREA)
  • Control Of Amplification And Gain Control (AREA)
  • Direct Current Feeding And Distribution (AREA)
  • Logic Circuits (AREA)
DE69322751T 1992-12-14 1993-10-27 Schmelzverbindungsprogrammierbarer Spannungsabwärtswandler Expired - Fee Related DE69322751T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/991,533 US5434498A (en) 1992-12-14 1992-12-14 Fuse programmable voltage converter with a secondary tuning path

Publications (2)

Publication Number Publication Date
DE69322751D1 true DE69322751D1 (de) 1999-02-04
DE69322751T2 DE69322751T2 (de) 1999-07-29

Family

ID=25537308

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69322751T Expired - Fee Related DE69322751T2 (de) 1992-12-14 1993-10-27 Schmelzverbindungsprogrammierbarer Spannungsabwärtswandler

Country Status (4)

Country Link
US (1) US5434498A (de)
EP (1) EP0602355B1 (de)
JP (1) JP2994540B2 (de)
DE (1) DE69322751T2 (de)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0141466B1 (ko) * 1992-10-07 1998-07-15 모리시타 요이찌 내부 강압회로
KR0131746B1 (ko) * 1993-12-01 1998-04-14 김주용 내부 강압전원 회로
US5631606A (en) * 1995-08-01 1997-05-20 Information Storage Devices, Inc. Fully differential output CMOS power amplifier
JP3517493B2 (ja) * 1995-09-21 2004-04-12 松下電器産業株式会社 内部降圧回路
DE19705355A1 (de) 1997-02-12 1998-11-19 Siemens Ag Verfahren zur Minimierung der Zugriffszeit bei Halbleiterspeichern
KR100238238B1 (ko) * 1997-03-31 2000-01-15 윤종용 반도체 메모리장치의 내부 전압 제어회로 및 그 제어방법
JP3398564B2 (ja) * 1997-04-11 2003-04-21 富士通株式会社 半導体装置
KR100359856B1 (ko) * 1998-06-30 2003-01-08 주식회사 하이닉스반도체 앤티퓨즈를갖는내부전압발생기
US6310789B1 (en) 1999-06-25 2001-10-30 The Procter & Gamble Company Dynamically-controlled, intrinsically regulated charge pump power converter
JP3820149B2 (ja) 1999-06-25 2006-09-13 ザ ボード オブ トラスティーズ オブ ザ ユニバーシティ オブ イリノイ 動的切換可能な電力変換器
JP2001035199A (ja) * 1999-07-26 2001-02-09 Mitsubishi Electric Corp 半導体装置
US6515934B2 (en) 1999-07-26 2003-02-04 Mitsubishi Denki Kabushiki Kaisha Semiconductor device including internal potential generating circuit allowing tuning in short period of time and reduction of chip area
DE19950541A1 (de) * 1999-10-20 2001-06-07 Infineon Technologies Ag Spannungsgenerator
US6400638B1 (en) 2000-02-25 2002-06-04 Advanced Micro Devices, Inc. Wordline driver for flash memory read mode
US6430087B1 (en) * 2000-02-28 2002-08-06 Advanced Micro Devices, Inc. Trimming method and system for wordline booster to minimize process variation of boosted wordline voltage
US6370046B1 (en) 2000-08-31 2002-04-09 The Board Of Trustees Of The University Of Illinois Ultra-capacitor based dynamically regulated charge pump power converter
JP3504220B2 (ja) * 2000-06-23 2004-03-08 株式会社東芝 半導体集積回路及びその内部基準電位変更方法
US7187228B1 (en) * 2001-06-22 2007-03-06 Quicklogic Corporation Method of programming an antifuse
KR100426990B1 (ko) * 2001-06-27 2004-04-13 삼성전자주식회사 외부의 코드에 따라 프로그래머블하게 기준 전압을 발생시키는 기준 전압 발생 회로
KR100596869B1 (ko) * 2003-02-10 2006-07-04 주식회사 하이닉스반도체 특성 조절 장치를 구비한 반도체 장치의 내부전압 발생장치
FR2875610B1 (fr) * 2005-02-03 2009-01-23 Samsung Electronics Co Ltd Generateur et procede de generation de tension d'alimentation interne pour reduire la consommation de courant
KR100803363B1 (ko) * 2006-11-13 2008-02-13 주식회사 하이닉스반도체 반도체 메모리 장치의 전압 생성 회로
KR100873613B1 (ko) * 2006-11-14 2008-12-12 주식회사 하이닉스반도체 반도체 메모리 장치의 전압 생성 회로 및 방법
US7995384B2 (en) 2008-08-15 2011-08-09 Macronix International Co., Ltd. Electrically isolated gated diode nonvolatile memory
US9002447B2 (en) 2013-03-14 2015-04-07 Medtronic, Inc. Implantable medical device having power supply for generating a regulated power supply
JP7164264B2 (ja) * 2019-03-28 2022-11-01 ラピスセミコンダクタ株式会社 半導体装置
DE102019114228A1 (de) * 2019-05-28 2020-12-03 Ebm-Papst Mulfingen Gmbh & Co. Kg Analogspannungsprogrammierung

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2608826B1 (fr) * 1986-12-19 1989-03-17 Eurotechnique Sa Circuit integre comportant des elements d'aiguillage vers des elements de redondance dans une memoire
US4994688A (en) * 1988-05-25 1991-02-19 Hitachi Ltd. Semiconductor device having a reference voltage generating circuit
JP3014420B2 (ja) * 1990-08-17 2000-02-28 株式会社日立製作所 半導体集積回路装置

Also Published As

Publication number Publication date
JPH06261450A (ja) 1994-09-16
EP0602355B1 (de) 1998-12-23
EP0602355A1 (de) 1994-06-22
JP2994540B2 (ja) 1999-12-27
US5434498A (en) 1995-07-18
DE69322751T2 (de) 1999-07-29

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee