DE69322604T2 - Mit einer Lastanordnung und einem Treibertransistor ausgestattete Dünnschichttransistorschaltung und Verfahren zu ihrer Herstellung - Google Patents

Mit einer Lastanordnung und einem Treibertransistor ausgestattete Dünnschichttransistorschaltung und Verfahren zu ihrer Herstellung

Info

Publication number
DE69322604T2
DE69322604T2 DE69322604T DE69322604T DE69322604T2 DE 69322604 T2 DE69322604 T2 DE 69322604T2 DE 69322604 T DE69322604 T DE 69322604T DE 69322604 T DE69322604 T DE 69322604T DE 69322604 T2 DE69322604 T2 DE 69322604T2
Authority
DE
Germany
Prior art keywords
amorphous silicon
region
driver transistor
thin film
film transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69322604T
Other languages
German (de)
English (en)
Other versions
DE69322604D1 (de
Inventor
Yoshiharu Suita-Shi Osaka Kataoka
Mikio Tawaraguchi-Cho Ikoma-Shi Nara-Ken Katayama
Naofumi Nara-Shi Nara-Ken Kondo
Takehisa Kusatsu-Shi Shiga-Ken Sakurai
Yoshinori Yamatokoriyama-Shi Nara-Ken Shimada
Manabu Tenri-Shi Nara-Ken Takahama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Publication of DE69322604D1 publication Critical patent/DE69322604D1/de
Application granted granted Critical
Publication of DE69322604T2 publication Critical patent/DE69322604T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6746—Amorphous silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile

Landscapes

  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
DE69322604T 1992-10-30 1993-10-29 Mit einer Lastanordnung und einem Treibertransistor ausgestattete Dünnschichttransistorschaltung und Verfahren zu ihrer Herstellung Expired - Lifetime DE69322604T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP29352692A JP2887032B2 (ja) 1992-10-30 1992-10-30 薄膜トランジスタ回路およびその製造方法

Publications (2)

Publication Number Publication Date
DE69322604D1 DE69322604D1 (de) 1999-01-28
DE69322604T2 true DE69322604T2 (de) 1999-06-17

Family

ID=17795887

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69322604T Expired - Lifetime DE69322604T2 (de) 1992-10-30 1993-10-29 Mit einer Lastanordnung und einem Treibertransistor ausgestattete Dünnschichttransistorschaltung und Verfahren zu ihrer Herstellung

Country Status (6)

Country Link
US (1) US5471070A (enExample)
EP (1) EP0595648B1 (enExample)
JP (1) JP2887032B2 (enExample)
KR (1) KR970009850B1 (enExample)
DE (1) DE69322604T2 (enExample)
TW (1) TW256939B (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5864162A (en) * 1993-07-12 1999-01-26 Peregrine Seimconductor Corporation Apparatus and method of making a self-aligned integrated resistor load on ultrathin silicon on sapphire
US5637519A (en) * 1996-03-21 1997-06-10 Industrial Technology Research Institute Method of fabricating a lightly doped drain thin-film transistor
JPH1020331A (ja) * 1996-06-28 1998-01-23 Sharp Corp 液晶表示装置
US5870330A (en) 1996-12-27 1999-02-09 Stmicroelectronics, Inc. Method of making and structure of SRAM storage cell with N channel thin film transistor load devices
US6235586B1 (en) 1999-07-13 2001-05-22 Advanced Micro Devices, Inc. Thin floating gate and conductive select gate in situ doped amorphous silicon material for NAND type flash memory device applications
US20040004251A1 (en) * 2002-07-08 2004-01-08 Madurawe Raminda U. Insulated-gate field-effect thin film transistors
EP2202802B1 (en) * 2008-12-24 2012-09-26 Semiconductor Energy Laboratory Co., Ltd. Driver circuit and semiconductor device
WO2011096286A1 (en) * 2010-02-05 2011-08-11 Semiconductor Energy Laboratory Co., Ltd. Field effect transistor and semiconductor device
CN103098376B (zh) * 2010-09-02 2016-06-22 夏普株式会社 晶体管电路、触发器、信号处理电路、驱动电路以及显示装置
KR102871972B1 (ko) 2021-05-27 2025-10-17 삼성디스플레이 주식회사 스캔 드라이버 및 표시 장치

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59232456A (ja) * 1983-06-16 1984-12-27 Hitachi Ltd 薄膜回路素子
JPS60182169A (ja) * 1984-02-29 1985-09-17 Fujitsu Ltd アモルフアスシリコンインバ−タ
JPS60182168A (ja) * 1984-02-29 1985-09-17 Fujitsu Ltd アモルフアスシリコンインバ−タの製造方法
US4752814A (en) * 1984-03-12 1988-06-21 Xerox Corporation High voltage thin film transistor
JPS6113665A (ja) * 1984-06-29 1986-01-21 Fujitsu Ltd シフトレジスタ集積回路
JPS61234623A (ja) * 1985-04-10 1986-10-18 Nec Ic Microcomput Syst Ltd Ｎａｎｄ−ｎｏｒ論理変換回路
JPS6240823A (ja) * 1985-08-19 1987-02-21 Fujitsu Ltd 論理回路
SU1411934A1 (ru) * 1986-07-09 1988-07-23 Ленинградский электротехнический институт им.В.И.Ульянова (Ленина) Г-триггер
JPH01287958A (ja) * 1988-05-13 1989-11-20 Fujitsu Ltd 半導体記憶装置
WO1991011027A1 (en) * 1990-01-16 1991-07-25 Iowa State University Research Foundation, Inc. Non-crystalline silicon active device for large-scale digital and analog networks
JP2881894B2 (ja) * 1990-01-22 1999-04-12 ソニー株式会社 抵抗体
JP2959077B2 (ja) * 1990-08-18 1999-10-06 セイコーエプソン株式会社 半導体装置
JPH04207416A (ja) * 1990-11-30 1992-07-29 Casio Comput Co Ltd 薄膜トランジスタによる論理回路

Also Published As

Publication number Publication date
KR940010389A (ko) 1994-05-26
DE69322604D1 (de) 1999-01-28
JP2887032B2 (ja) 1999-04-26
US5471070A (en) 1995-11-28
TW256939B (enExample) 1995-09-11
EP0595648B1 (en) 1998-12-16
EP0595648A1 (en) 1994-05-04
KR970009850B1 (ko) 1997-06-18
JPH06151848A (ja) 1994-05-31

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