DE69320745T2 - Elektrisch löschbare nichtflüchtige Halbleiterspeicheranordnung für selektiven Gebrauch in "boot block" oder normalen Flashspeicheranordnungen - Google Patents

Elektrisch löschbare nichtflüchtige Halbleiterspeicheranordnung für selektiven Gebrauch in "boot block" oder normalen Flashspeicheranordnungen

Info

Publication number
DE69320745T2
DE69320745T2 DE69320745T DE69320745T DE69320745T2 DE 69320745 T2 DE69320745 T2 DE 69320745T2 DE 69320745 T DE69320745 T DE 69320745T DE 69320745 T DE69320745 T DE 69320745T DE 69320745 T2 DE69320745 T2 DE 69320745T2
Authority
DE
Germany
Prior art keywords
electrically erasable
volatile semiconductor
selective use
boot block
memory device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69320745T
Other languages
English (en)
Other versions
DE69320745D1 (de
Inventor
Takao Akaogi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Semiconductor Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE69320745D1 publication Critical patent/DE69320745D1/de
Publication of DE69320745T2 publication Critical patent/DE69320745T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
DE69320745T 1992-10-06 1993-06-28 Elektrisch löschbare nichtflüchtige Halbleiterspeicheranordnung für selektiven Gebrauch in "boot block" oder normalen Flashspeicheranordnungen Expired - Fee Related DE69320745T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP26741392A JPH06119230A (ja) 1992-10-06 1992-10-06 半導体記憶装置

Publications (2)

Publication Number Publication Date
DE69320745D1 DE69320745D1 (de) 1998-10-08
DE69320745T2 true DE69320745T2 (de) 1999-01-14

Family

ID=17444508

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69320745T Expired - Fee Related DE69320745T2 (de) 1992-10-06 1993-06-28 Elektrisch löschbare nichtflüchtige Halbleiterspeicheranordnung für selektiven Gebrauch in "boot block" oder normalen Flashspeicheranordnungen

Country Status (5)

Country Link
US (1) US5402383A (de)
EP (1) EP0592069B1 (de)
JP (1) JPH06119230A (de)
KR (1) KR950014092B1 (de)
DE (1) DE69320745T2 (de)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6414878B2 (en) 1992-03-17 2002-07-02 Hitachi, Ltd. Data line disturbance free memory block divided flash memory and microcomputer having flash memory therein
US7057937B1 (en) 1992-03-17 2006-06-06 Renesas Technology Corp. Data processing apparatus having a flash memory built-in which is rewritable by use of external device
TW231343B (de) 1992-03-17 1994-10-01 Hitachi Seisakusyo Kk
US5687345A (en) * 1992-03-17 1997-11-11 Hitachi, Ltd. Microcomputer having CPU and built-in flash memory that is rewritable under control of the CPU analyzing a command supplied from an external device
JPH08328844A (ja) * 1995-05-29 1996-12-13 Nec Shizuoka Ltd プログラムの変更方法
US5867641A (en) * 1995-10-27 1999-02-02 Scm Microsystems (U.S.) Inc. Flash translation layer cleanup system and method
EP0905704B1 (de) * 1997-09-24 2010-03-31 STMicroelectronics S.r.l. Sektorbasierter Halbleiterspeicher mit verstellbaren Sektoradressen
DE69840877D1 (en) * 1998-01-06 2009-07-16 Macronix Int Co Ltd Icher
US6119226A (en) * 1998-01-06 2000-09-12 Macronix International Co., Ltd. Memory supporting multiple address protocols
US6289300B1 (en) 1998-02-06 2001-09-11 Analog Devices, Inc. Integrated circuit with embedded emulator and emulation system for use with such an integrated circuit
EP0935195A2 (de) 1998-02-06 1999-08-11 Analog Devices, Inc. Integrierte Schaltung mit hochauflösendem Analog-Digital-Wandler, einem Mikrokontroller und hochdichtem Speicher und einem Emulator dafür
US6385689B1 (en) * 1998-02-06 2002-05-07 Analog Devices, Inc. Memory and a data processor including a memory
US6701395B1 (en) 1998-02-06 2004-03-02 Analog Devices, Inc. Analog-to-digital converter that preseeds memory with channel identifier data and makes conversions at fixed rate with direct memory access
KR100305033B1 (ko) * 1999-06-24 2001-11-14 윤종용 블럭 아키텍츄어 옵션 회로를 구비하는 불휘발성 반도체 메모리 장치
JP3627915B2 (ja) 2000-05-30 2005-03-09 シャープ株式会社 ブートブロックフラッシュメモリ制御回路、およびそれを備えたｉｃメモリカードと半導体記憶装置、並びにブートブロックフラッシュメモリの消去方法
US6400611B1 (en) 2001-03-23 2002-06-04 Atmel Corporation Independent asynchronous boot block for synchronous non-volatile memory devices
KR100395770B1 (ko) * 2001-05-23 2003-08-21 삼성전자주식회사 시스템의 부트-업 메모리로서 사용 가능한 불휘발성플래시 메모리 장치 및 그의 동작 방법
US7165137B2 (en) * 2001-08-06 2007-01-16 Sandisk Corporation System and method for booting from a non-volatile application and file storage device
US7082525B2 (en) * 2002-10-02 2006-07-25 Sandisk Corporation Booting from non-linear memory
JP2005092969A (ja) 2003-09-16 2005-04-07 Renesas Technology Corp 不揮発性半導体記憶装置
US7257703B2 (en) * 2003-11-18 2007-08-14 Toshiba America Electronic Components, Inc. Bootable NAND flash memory architecture
US7594135B2 (en) * 2003-12-31 2009-09-22 Sandisk Corporation Flash memory system startup operation
CN100470504C (zh) * 2006-03-30 2009-03-18 亚洲光学股份有限公司 存储器存取方法
JP5072446B2 (ja) * 2007-06-15 2012-11-14 スパンション エルエルシー 半導体装置及びその制御方法
JP2008217993A (ja) * 2008-06-19 2008-09-18 Renesas Technology Corp 不揮発性半導体記憶装置
JP2010044822A (ja) * 2008-08-12 2010-02-25 Toppan Printing Co Ltd 半導体メモリ
JP4926144B2 (ja) * 2008-09-09 2012-05-09 ルネサスエレクトロニクス株式会社 不揮発性半導体記憶装置
JP2010128973A (ja) * 2008-11-28 2010-06-10 Toshiba Corp 情報処理装置、及び情報処理方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4658377A (en) * 1984-07-26 1987-04-14 Texas Instruments Incorporated Dynamic memory array with segmented bit lines
US5065364A (en) * 1989-09-15 1991-11-12 Intel Corporation Apparatus for providing block erasing in a flash EPROM

Also Published As

Publication number Publication date
KR950014092B1 (ko) 1995-11-21
KR940010110A (ko) 1994-05-24
EP0592069B1 (de) 1998-09-02
US5402383A (en) 1995-03-28
EP0592069A1 (de) 1994-04-13
JPH06119230A (ja) 1994-04-28
DE69320745D1 (de) 1998-10-08

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: FUJITSU MICROELECTRONICS LTD., TOKYO, JP

8328 Change in the person/name/address of the agent

Representative=s name: SEEGER SEEGER LINDNER PARTNERSCHAFT PATENTANWAELTE

8339 Ceased/non-payment of the annual fee