DE69315882D1 - Verfahren zur Herstellung einer Stange aus supraleitendem Oxidmaterial mit Hochsprungstemperatur - Google Patents

Verfahren zur Herstellung einer Stange aus supraleitendem Oxidmaterial mit Hochsprungstemperatur

Info

Publication number
DE69315882D1
DE69315882D1 DE69315882T DE69315882T DE69315882D1 DE 69315882 D1 DE69315882 D1 DE 69315882D1 DE 69315882 T DE69315882 T DE 69315882T DE 69315882 T DE69315882 T DE 69315882T DE 69315882 D1 DE69315882 D1 DE 69315882D1
Authority
DE
Germany
Prior art keywords
producing
oxide material
rod made
superconducting oxide
high jump
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69315882T
Other languages
English (en)
Other versions
DE69315882T2 (de
Inventor
Christian Belouet
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Alcatel Lucent SAS
Original Assignee
Alcatel Alsthom Compagnie Generale dElectricite
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alcatel Alsthom Compagnie Generale dElectricite filed Critical Alcatel Alsthom Compagnie Generale dElectricite
Publication of DE69315882D1 publication Critical patent/DE69315882D1/de
Application granted granted Critical
Publication of DE69315882T2 publication Critical patent/DE69315882T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/225—Complex oxides based on rare earth copper oxides, e.g. high T-superconductors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/002—Crucibles or containers for supporting the melt
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/30—Hydrogen technology
    • Y02E60/32—Hydrogen storage
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
    • Y10S505/742—Annealing

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Hydrogen, Water And Hydrids (AREA)
DE69315882T 1992-04-06 1993-04-02 Verfahren zur Herstellung einer Stange aus supraleitendem Oxidmaterial mit Hochsprungstemperatur Expired - Fee Related DE69315882T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9204174A FR2689524B1 (fr) 1992-04-06 1992-04-06 Procede de fabrication d'un lingot en oxyde supraconducteur a haute temperature critique.

Publications (2)

Publication Number Publication Date
DE69315882D1 true DE69315882D1 (de) 1998-02-05
DE69315882T2 DE69315882T2 (de) 1998-04-16

Family

ID=9428530

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69315882T Expired - Fee Related DE69315882T2 (de) 1992-04-06 1993-04-02 Verfahren zur Herstellung einer Stange aus supraleitendem Oxidmaterial mit Hochsprungstemperatur

Country Status (6)

Country Link
US (1) US5376622A (de)
EP (1) EP0565415B1 (de)
JP (1) JPH0624701A (de)
CA (1) CA2093379C (de)
DE (1) DE69315882T2 (de)
FR (1) FR2689524B1 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2551580B2 (ja) * 1987-04-30 1996-11-06 ホ−ヤ株式会社 コンタクトレンズの親水化方法
DE9318197U1 (de) * 1993-11-30 1994-11-10 Adelwitz Technologie-Zentrum GmbH, 04886 Arzberg Hochtemperatur Supraleiter Material
FR2742366B1 (fr) * 1995-12-19 1998-01-09 Commissariat Energie Atomique Procede et installation de sustentation d'une masse liquide par une couche gazeuse
FR2757184B1 (fr) * 1996-12-12 1999-02-26 Commissariat Energie Atomique Dispositif et procede de cristallogenese
FR2806100B1 (fr) 2000-03-10 2002-09-20 Commissariat Energie Atomique Dispositif et procede de cristallogenese

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2509637A1 (fr) * 1981-07-17 1983-01-21 Commissariat Energie Atomique Procede de sustentation, de positionnement et de moulage sans contact de masses liquides permettant la solidification en forme de materiaux et application de ce procede a la mise en forme de materiaux en microgravite
US4975411A (en) * 1987-05-19 1990-12-04 Fonar Corporation Superconductors and methods of making same
US4942151A (en) * 1987-09-28 1990-07-17 Arch Development Corporation Magnetic preferential orientation of metal oxide superconducting materials
JPH01157499A (ja) * 1987-12-11 1989-06-20 Toshiba Corp 酸化物超電導体単結晶の製造方法
WO1990013517A1 (en) * 1989-05-02 1990-11-15 Nippon Steel Corporation Oxide superconductor and method of producing the same
FR2665462B1 (fr) * 1990-08-02 1997-08-29 Centre Nat Rech Scient Procede de cristallisation en presence de champ magnetique.

Also Published As

Publication number Publication date
EP0565415A3 (de) 1995-03-29
CA2093379A1 (fr) 1993-10-07
JPH0624701A (ja) 1994-02-01
FR2689524A1 (fr) 1993-10-08
EP0565415B1 (de) 1997-12-29
FR2689524B1 (fr) 1994-05-13
DE69315882T2 (de) 1998-04-16
US5376622A (en) 1994-12-27
EP0565415A2 (de) 1993-10-13
CA2093379C (fr) 1999-02-23

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: ALCATEL, PARIS, FR

8339 Ceased/non-payment of the annual fee