DE69315125T2 - Herstellungsverfahren für Halbleiterbauelement mit Kondensator - Google Patents

Herstellungsverfahren für Halbleiterbauelement mit Kondensator

Info

Publication number
DE69315125T2
DE69315125T2 DE69315125T DE69315125T DE69315125T2 DE 69315125 T2 DE69315125 T2 DE 69315125T2 DE 69315125 T DE69315125 T DE 69315125T DE 69315125 T DE69315125 T DE 69315125T DE 69315125 T2 DE69315125 T2 DE 69315125T2
Authority
DE
Germany
Prior art keywords
layer
dielectric layer
substrate
capacitor
dielectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69315125T
Other languages
German (de)
English (en)
Other versions
DE69315125D1 (de
Inventor
Eiji Fujii
Akihiro Matsuda
Tooru Nasu
Tatsuo Ootsuki
Yasuhiro Shimada
Yasuhiro Uemoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP04159222A external-priority patent/JP3083407B2/ja
Priority claimed from JP4167309A external-priority patent/JPH0613573A/ja
Priority claimed from JP4278380A external-priority patent/JPH06132496A/ja
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Application granted granted Critical
Publication of DE69315125D1 publication Critical patent/DE69315125D1/de
Publication of DE69315125T2 publication Critical patent/DE69315125T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6744—Monocrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/696—Electrodes comprising multiple layers, e.g. comprising a barrier layer and a metal layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
DE69315125T 1992-06-18 1993-06-18 Herstellungsverfahren für Halbleiterbauelement mit Kondensator Expired - Fee Related DE69315125T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP04159222A JP3083407B2 (ja) 1992-06-18 1992-06-18 半導体装置の製造方法
JP4167309A JPH0613573A (ja) 1992-06-25 1992-06-25 半導体記憶装置及びその製造方法
JP4278380A JPH06132496A (ja) 1992-10-16 1992-10-16 半導体記憶装置およびその製造方法

Publications (2)

Publication Number Publication Date
DE69315125D1 DE69315125D1 (de) 1997-12-18
DE69315125T2 true DE69315125T2 (de) 1998-06-10

Family

ID=27321504

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69315125T Expired - Fee Related DE69315125T2 (de) 1992-06-18 1993-06-18 Herstellungsverfahren für Halbleiterbauelement mit Kondensator

Country Status (3)

Country Link
US (1) US5661319A (enExample)
EP (2) EP0784347A2 (enExample)
DE (1) DE69315125T2 (enExample)

Families Citing this family (23)

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US5383088A (en) * 1993-08-09 1995-01-17 International Business Machines Corporation Storage capacitor with a conducting oxide electrode for metal-oxide dielectrics
JP3683972B2 (ja) * 1995-03-22 2005-08-17 三菱電機株式会社 半導体装置
JP2907322B2 (ja) * 1995-05-18 1999-06-21 日本電気株式会社 不揮発性半導体記憶装置
JP3246274B2 (ja) * 1995-06-22 2002-01-15 松下電器産業株式会社 半導体装置
KR0183732B1 (ko) * 1995-09-01 1999-03-20 김광호 반도체 장치의 캐패시터 제작방법
US6555394B2 (en) 1995-11-28 2003-04-29 Samsung Electronics Co., Ltd. Methods of fabricating capacitors including Ta2O5 layers in a chamber including changing a Ta2O5 layer to heater separation or chamber pressure
KR0165484B1 (ko) 1995-11-28 1999-02-01 김광호 탄탈륨산화막 증착 형성방법 및 그 장치
US5910880A (en) 1997-08-20 1999-06-08 Micron Technology, Inc. Semiconductor circuit components and capacitors
US5903493A (en) * 1997-09-17 1999-05-11 Lucent Technologies Inc. Metal to metal capacitor apparatus and method for making
GB2326524B (en) * 1997-12-23 1999-11-17 United Microelectronics Corp Method of fabricating a dynamic random access memory device
US6191443B1 (en) 1998-02-28 2001-02-20 Micron Technology, Inc. Capacitors, methods of forming capacitors, and DRAM memory cells
US6066525A (en) * 1998-04-07 2000-05-23 Lsi Logic Corporation Method of forming DRAM capacitor by forming separate dielectric layers in a CMOS process
US6730559B2 (en) * 1998-04-10 2004-05-04 Micron Technology, Inc. Capacitors and methods of forming capacitors
US6156638A (en) 1998-04-10 2000-12-05 Micron Technology, Inc. Integrated circuitry and method of restricting diffusion from one material to another
JP2000012804A (ja) * 1998-06-24 2000-01-14 Matsushita Electron Corp 半導体記憶装置
WO2000026955A1 (en) * 1998-10-30 2000-05-11 Advanced Micro Devices, Inc. Fabrication of a transistor having an ultra-thin gate dielectric
US6177305B1 (en) 1998-12-17 2001-01-23 Lsi Logic Corporation Fabrication of metal-insulator-metal capacitive structures
US6391801B1 (en) 1999-09-01 2002-05-21 Micron Technology, Inc. Method of forming a layer comprising tungsten oxide
US7005695B1 (en) * 2000-02-23 2006-02-28 Micron Technology, Inc. Integrated circuitry including a capacitor with an amorphous and a crystalline high K capacitor dielectric region
US6303456B1 (en) 2000-02-25 2001-10-16 International Business Machines Corporation Method for making a finger capacitor with tuneable dielectric constant
FR2845522A1 (fr) * 2002-10-03 2004-04-09 St Microelectronics Sa Circuit integre a couche enterree fortement conductrice
JP5451011B2 (ja) * 2008-08-29 2014-03-26 ピーエスフォー ルクスコ エスエイアールエル 半導体記憶装置及び情報処理システム
US10614868B2 (en) 2018-04-16 2020-04-07 Samsung Electronics Co., Ltd. Memory device with strong polarization coupling

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5745968A (en) * 1980-08-29 1982-03-16 Ibm Capacitor with double dielectric unit
US5519234A (en) * 1991-02-25 1996-05-21 Symetrix Corporation Ferroelectric dielectric memory cell can switch at least giga cycles and has low fatigue - has high dielectric constant and low leakage current
KR940006708B1 (ko) * 1989-01-26 1994-07-25 세이꼬 엡슨 가부시끼가이샤 반도체 장치의 제조 방법
EP0415751B1 (en) * 1989-08-30 1995-03-15 Nec Corporation Thin film capacitor and manufacturing method thereof
US5241211A (en) * 1989-12-20 1993-08-31 Nec Corporation Semiconductor device
JP2898686B2 (ja) * 1990-03-06 1999-06-02 株式会社日立製作所 半導体記憶装置およびその製造方法
JPH0775247B2 (ja) * 1990-05-28 1995-08-09 株式会社東芝 半導体記憶装置
JP3092140B2 (ja) * 1990-06-01 2000-09-25 セイコーエプソン株式会社 半導体装置の製造方法
JPH0472778A (ja) * 1990-07-13 1992-03-06 Seiko Epson Corp 強誘電体記憶装置
JPH0480959A (ja) * 1990-07-24 1992-03-13 Seiko Epson Corp 半導体装置
JP3144799B2 (ja) * 1990-11-30 2001-03-12 松下電器産業株式会社 半導体装置およびその製造方法
JPH0563205A (ja) * 1991-09-03 1993-03-12 Sharp Corp 半導体装置
US5206788A (en) * 1991-12-12 1993-04-27 Ramtron Corporation Series ferroelectric capacitor structure for monolithic integrated circuits and method
US5313089A (en) * 1992-05-26 1994-05-17 Motorola, Inc. Capacitor and a memory cell formed therefrom
US5187638A (en) * 1992-07-27 1993-02-16 Micron Technology, Inc. Barrier layers for ferroelectric and pzt dielectric on silicon

Also Published As

Publication number Publication date
EP0784347A2 (en) 1997-07-16
EP0575194B1 (en) 1997-11-12
EP0784347A3 (enExample) 1997-08-20
US5661319A (en) 1997-08-26
DE69315125D1 (de) 1997-12-18
EP0575194A1 (en) 1993-12-22

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD., KADOMA,

8327 Change in the person/name/address of the patent owner

Owner name: PANASONIC CORP., KADOMA, OSAKA, JP

8339 Ceased/non-payment of the annual fee