DE69311982T2 - Thermische Behandlungsvorrichtung für Halbleiter-Scheibe mit Ausschaltung der thermischen Donoren - Google Patents

Thermische Behandlungsvorrichtung für Halbleiter-Scheibe mit Ausschaltung der thermischen Donoren

Info

Publication number
DE69311982T2
DE69311982T2 DE69311982T DE69311982T DE69311982T2 DE 69311982 T2 DE69311982 T2 DE 69311982T2 DE 69311982 T DE69311982 T DE 69311982T DE 69311982 T DE69311982 T DE 69311982T DE 69311982 T2 DE69311982 T2 DE 69311982T2
Authority
DE
Germany
Prior art keywords
thermal
switching
semiconductor wafer
treatment device
donors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69311982T
Other languages
English (en)
Other versions
DE69311982D1 (de
Inventor
Shoji Tsuruta
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Materials Silicon Corp
Mitsubishi Materials Corp
Original Assignee
Mitsubishi Materials Silicon Corp
Mitsubishi Materials Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Materials Silicon Corp, Mitsubishi Materials Corp filed Critical Mitsubishi Materials Silicon Corp
Application granted granted Critical
Publication of DE69311982D1 publication Critical patent/DE69311982D1/de
Publication of DE69311982T2 publication Critical patent/DE69311982T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/6776—Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
DE69311982T 1992-08-07 1993-04-07 Thermische Behandlungsvorrichtung für Halbleiter-Scheibe mit Ausschaltung der thermischen Donoren Expired - Lifetime DE69311982T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23274792 1992-08-07

Publications (2)

Publication Number Publication Date
DE69311982D1 DE69311982D1 (de) 1997-08-14
DE69311982T2 true DE69311982T2 (de) 1998-02-26

Family

ID=16944128

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69311982T Expired - Lifetime DE69311982T2 (de) 1992-08-07 1993-04-07 Thermische Behandlungsvorrichtung für Halbleiter-Scheibe mit Ausschaltung der thermischen Donoren

Country Status (4)

Country Link
US (1) US5449883A (de)
EP (1) EP0582039B1 (de)
KR (1) KR0177486B1 (de)
DE (1) DE69311982T2 (de)

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AT388784B (de) * 1986-02-14 1989-08-25 Steyr Daimler Puch Ag Wellenkupplung
US6031211A (en) * 1997-07-11 2000-02-29 Concept Systems Design, Inc. Zone heating system with feedback control
US5789722A (en) * 1996-11-12 1998-08-04 Zimac Laboratories, Inc. Modular multizone heater system and method
US6117266A (en) * 1997-12-19 2000-09-12 Interuniversifair Micro-Elektronica Cenirum (Imec Vzw) Furnace for continuous, high throughput diffusion processes from various diffusion sources
US5960158A (en) 1997-07-11 1999-09-28 Ag Associates Apparatus and method for filtering light in a thermal processing chamber
JP3783366B2 (ja) * 1997-10-09 2006-06-07 松下電器産業株式会社 焼成炉
US5970214A (en) 1998-05-14 1999-10-19 Ag Associates Heating device for semiconductor wafers
US5930456A (en) 1998-05-14 1999-07-27 Ag Associates Heating device for semiconductor wafers
US6210484B1 (en) 1998-09-09 2001-04-03 Steag Rtp Systems, Inc. Heating device containing a multi-lamp cone for heating semiconductor wafers
US6139627A (en) * 1998-09-21 2000-10-31 The University Of Akron Transparent multi-zone crystal growth furnace and method for controlling the same
DE69937255T2 (de) * 1998-11-20 2008-07-03 Steag RTP Systems, Inc., San Jose Schnell-aufheiz- und -kühlvorrichtung für halbleiterwafer
NL1010836C2 (nl) * 1998-12-17 2000-06-23 O T B Engineering B V Oven voor het vervaardigen van zonnecellen.
US6771895B2 (en) 1999-01-06 2004-08-03 Mattson Technology, Inc. Heating device for heating semiconductor wafers in thermal processing chambers
DE19903798A1 (de) * 1999-02-01 2000-08-10 Angew Solarenergie Ase Gmbh Verfahren und Anordnung zur Wärmebehandlung von flächigen Gegenständen
US6281141B1 (en) 1999-02-08 2001-08-28 Steag Rtp Systems, Inc. Process for forming thin dielectric layers in semiconductor devices
DE19948606A1 (de) 1999-10-08 2001-04-12 Seho Systemtechnik Gmbh Verfahren und Vorrichtung zum Temperieren von Bauteilen, z.B. Halbleiterschaltkreisen und dergl.
JP3450240B2 (ja) * 1999-11-25 2003-09-22 Ｎｅｃエレクトロニクス株式会社 ランプアニール装置とランプアニール装置の処理温度制御方法
US7037797B1 (en) 2000-03-17 2006-05-02 Mattson Technology, Inc. Localized heating and cooling of substrates
US6353210B1 (en) * 2000-04-11 2002-03-05 Applied Materials Inc. Correction of wafer temperature drift in a plasma reactor based upon continuous wafer temperature measurements using and in-situ wafer temperature optical probe
US6297480B1 (en) * 2000-12-22 2001-10-02 Taiwan Semiconductor Manufacturing Company, Ltd Method and apparatus for preventing contamination in a hot plate oven
US6539645B2 (en) * 2001-01-09 2003-04-01 Mark Savarese Drying apparatus and methods
GB2373860B (en) * 2001-03-28 2004-12-15 Reflowtech Internat Ltd Monitoring system
US6705457B2 (en) * 2002-04-01 2004-03-16 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Transport device and method of transporting to-be-processed elements through a high-temperature zone
AU2002311325A1 (en) * 2002-07-01 2004-01-19 Sumitomo Titanium Corporation Silicon single crystal material and its production method
JP4658038B2 (ja) * 2003-03-06 2011-03-23 レコ コーポレイション 予測的温度制御機能を備えた分析炉
US20120085281A1 (en) * 2010-10-07 2012-04-12 Sandvik Thermal Process, Inc. Apparatus with multiple heating systems for in-line thermal treatment of substrates
KR101394158B1 (ko) * 2012-10-15 2014-05-15 한국에너지기술연구원 실리콘 기판 제조장치
KR101394156B1 (ko) * 2012-10-15 2014-05-15 한국에너지기술연구원 실리콘 기판 제조장치 및 제조 방법
WO2014174803A1 (ja) * 2013-04-22 2014-10-30 パナソニック株式会社 Ｅｌ表示装置の製造方法
DE102015214711A1 (de) * 2015-07-31 2017-02-02 Dürr Systems Ag Behandlungsanlage und Verfahren zum Behandeln von Werkstücken
DE102015214706A1 (de) 2015-07-31 2017-02-02 Dürr Systems Ag Behandlungsanlage und Verfahren zum Behandeln von Werkstücken
US10954606B2 (en) 2018-06-27 2021-03-23 Globalwafers Co., Ltd. Methods for modeling the impurity concentration of a single crystal silicon ingot
US11047066B2 (en) * 2018-06-27 2021-06-29 Globalwafers Co., Ltd. Growth of plural sample rods to determine impurity build-up during production of single crystal silicon ingots
US10793969B2 (en) * 2018-06-27 2020-10-06 Globalwafers Co., Ltd. Sample rod growth and resistivity measurement during single crystal silicon ingot production
US10781532B2 (en) * 2018-06-27 2020-09-22 Globalwafers Co., Ltd. Methods for determining the resistivity of a polycrystalline silicon melt
US11739437B2 (en) * 2018-12-27 2023-08-29 Globalwafers Co., Ltd. Resistivity stabilization measurement of fat neck slabs for high resistivity and ultra-high resistivity single crystal silicon ingot growth

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4693777A (en) * 1984-11-30 1987-09-15 Kabushiki Kaisha Toshiba Apparatus for producing semiconductor devices
JPH072523B2 (ja) * 1986-05-01 1995-01-18 三菱マテリアル株式会社 カセツトロ−ダ
JP2501334B2 (ja) * 1987-06-19 1996-05-29 松下電工株式会社 リフロ−炉
DE3855871T2 (de) * 1987-09-11 1997-10-16 Hitachi Ltd Vorrichtung zur Durchführung einer Wärmebehandlung an Halbleiterplättchen
US4876437A (en) * 1988-07-14 1989-10-24 Nihon Den-Netsu Keiki Co., Ltd. Soldering apparatus
US5200017A (en) * 1989-02-27 1993-04-06 Hitachi, Ltd. Sample processing method and apparatus
US5060354A (en) * 1990-07-02 1991-10-29 George Chizinsky Heated plate rapid thermal processor

Also Published As

Publication number Publication date
EP0582039A1 (de) 1994-02-09
EP0582039B1 (de) 1997-07-09
KR940004716A (ko) 1994-03-15
US5449883A (en) 1995-09-12
KR0177486B1 (ko) 1999-04-15
DE69311982D1 (de) 1997-08-14

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