DE69308847T2 - Verfahren zur abscheidung von wolfram auf titannitrid durch cvd ohne silan - Google Patents

Verfahren zur abscheidung von wolfram auf titannitrid durch cvd ohne silan

Info

Publication number
DE69308847T2
DE69308847T2 DE69308847T DE69308847T DE69308847T2 DE 69308847 T2 DE69308847 T2 DE 69308847T2 DE 69308847 T DE69308847 T DE 69308847T DE 69308847 T DE69308847 T DE 69308847T DE 69308847 T2 DE69308847 T2 DE 69308847T2
Authority
DE
Germany
Prior art keywords
chamber
wafer
pressure
temperature
tungsten
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69308847T
Other languages
German (de)
English (en)
Other versions
DE69308847D1 (de
Inventor
Robert Foster
Damodaran Srinivas
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Materials Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Materials Research Corp filed Critical Materials Research Corp
Publication of DE69308847D1 publication Critical patent/DE69308847D1/de
Application granted granted Critical
Publication of DE69308847T2 publication Critical patent/DE69308847T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0209—Pretreatment of the material to be coated by heating
    • C23C16/0218—Pretreatment of the material to be coated by heating in a reactive atmosphere
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
    • C23C16/14—Deposition of only one other metal element

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
DE69308847T 1992-06-15 1993-06-11 Verfahren zur abscheidung von wolfram auf titannitrid durch cvd ohne silan Expired - Fee Related DE69308847T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/898,565 US5342652A (en) 1992-06-15 1992-06-15 Method of nucleating tungsten on titanium nitride by CVD without silane
PCT/US1993/005633 WO1993025721A1 (en) 1992-06-15 1993-06-11 Method of nucleating tungsten on titanium nitride by cvd without silane

Publications (2)

Publication Number Publication Date
DE69308847D1 DE69308847D1 (de) 1997-04-17
DE69308847T2 true DE69308847T2 (de) 1997-06-19

Family

ID=25409637

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69308847T Expired - Fee Related DE69308847T2 (de) 1992-06-15 1993-06-11 Verfahren zur abscheidung von wolfram auf titannitrid durch cvd ohne silan

Country Status (10)

Country Link
US (1) US5342652A (ja)
EP (1) EP0644951B1 (ja)
JP (1) JP3228746B2 (ja)
KR (1) KR100296533B1 (ja)
AU (1) AU4633493A (ja)
CA (1) CA2136862A1 (ja)
DE (1) DE69308847T2 (ja)
SG (1) SG47528A1 (ja)
TW (1) TW236033B (ja)
WO (1) WO1993025721A1 (ja)

Families Citing this family (69)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FI119941B (fi) * 1999-10-15 2009-05-15 Asm Int Menetelmä nanolaminaattien valmistamiseksi
FI118158B (sv) 1999-10-15 2007-07-31 Asm Int Förfarande för modifiering av utgångsämneskemikalierna i en ALD-prosess
FI117944B (fi) 1999-10-15 2007-04-30 Asm Int Menetelmä siirtymämetallinitridiohutkalvojen kasvattamiseksi
US5628829A (en) 1994-06-03 1997-05-13 Materials Research Corporation Method and apparatus for low temperature deposition of CVD and PECVD films
AU1745695A (en) 1994-06-03 1996-01-04 Materials Research Corporation A method of nitridization of titanium thin films
US5975912A (en) 1994-06-03 1999-11-02 Materials Research Corporation Low temperature plasma-enhanced formation of integrated circuits
US5665640A (en) 1994-06-03 1997-09-09 Sony Corporation Method for producing titanium-containing thin films by low temperature plasma-enhanced chemical vapor deposition using a rotating susceptor reactor
JP3744554B2 (ja) * 1994-09-09 2006-02-15 キヤノンアネルバ株式会社 薄膜形成方法
KR100606622B1 (ko) * 1994-12-06 2006-12-01 램 리써치 코포레이션 대형제품용플라스마처리기
US5610106A (en) * 1995-03-10 1997-03-11 Sony Corporation Plasma enhanced chemical vapor deposition of titanium nitride using ammonia
US5563097A (en) * 1995-04-17 1996-10-08 Lee; Young J. Method for fabricating semiconductor device
US5567483A (en) * 1995-06-05 1996-10-22 Sony Corporation Process for plasma enhanced anneal of titanium nitride
US5643632A (en) * 1995-10-13 1997-07-01 Mosel Vitelic, Inc. Tungsten chemical vapor deposition process for suppression of volcano formation
US5834371A (en) * 1997-01-31 1998-11-10 Tokyo Electron Limited Method and apparatus for preparing and metallizing high aspect ratio silicon semiconductor device contacts to reduce the resistivity thereof
US5989652A (en) * 1997-01-31 1999-11-23 Tokyo Electron Limited Method of low temperature plasma enhanced chemical vapor deposition of tin film over titanium for use in via level applications
DE19704533C2 (de) * 1997-02-06 2000-10-26 Siemens Ag Verfahren zur Schichterzeugung auf einer Oberfläche
US6271121B1 (en) 1997-02-10 2001-08-07 Tokyo Electron Limited Process for chemical vapor deposition of tungsten onto a titanium nitride substrate surface
US5906866A (en) * 1997-02-10 1999-05-25 Tokyo Electron Limited Process for chemical vapor deposition of tungsten onto a titanium nitride substrate surface
US6156382A (en) * 1997-05-16 2000-12-05 Applied Materials, Inc. Chemical vapor deposition process for depositing tungsten
GB2343550A (en) * 1997-07-29 2000-05-10 Silicon Genesis Corp Cluster tool method and apparatus using plasma immersion ion implantation
US5795824A (en) * 1997-08-28 1998-08-18 Novellus Systems, Inc. Method for nucleation of CVD tungsten films
US6120660A (en) * 1998-02-11 2000-09-19 Silicon Genesis Corporation Removable liner design for plasma immersion ion implantation
US6274459B1 (en) 1998-02-17 2001-08-14 Silicon Genesis Corporation Method for non mass selected ion implant profile control
US6113735A (en) * 1998-03-02 2000-09-05 Silicon Genesis Corporation Distributed system and code for control and automation of plasma immersion ion implanter
US6022800A (en) * 1998-04-29 2000-02-08 Worldwide Semiconductor Manufacturing Corporation Method of forming barrier layer for tungsten plugs in interlayer dielectrics
US6289842B1 (en) 1998-06-22 2001-09-18 Structured Materials Industries Inc. Plasma enhanced chemical vapor deposition system
US6245668B1 (en) 1998-09-18 2001-06-12 International Business Machines Corporation Sputtered tungsten diffusion barrier for improved interconnect robustness
TW451305B (en) * 1999-01-13 2001-08-21 Tokyo Electron Ltd Method of forming tungsten layers and laminate structure of tungsten layers
WO2001029893A1 (en) 1999-10-15 2001-04-26 Asm America, Inc. Method for depositing nanolaminate thin films on sensitive surfaces
KR20030019613A (ko) * 2000-07-28 2003-03-06 동경 엘렉트론 주식회사 성막방법
US6423201B1 (en) 2000-08-23 2002-07-23 Applied Materials, Inc. Method of improving the adhesion of copper
FI109770B (fi) 2001-03-16 2002-10-15 Asm Microchemistry Oy Menetelmä metallinitridiohutkalvojen valmistamiseksi
JP4032872B2 (ja) * 2001-08-14 2008-01-16 東京エレクトロン株式会社 タングステン膜の形成方法
EP1425435A2 (en) * 2001-09-14 2004-06-09 Asm International N.V. Metal nitride deposition by ald using gettering reactant
US20040157426A1 (en) * 2003-02-07 2004-08-12 Luc Ouellet Fabrication of advanced silicon-based MEMS devices
JP3956049B2 (ja) * 2003-03-07 2007-08-08 東京エレクトロン株式会社 タングステン膜の形成方法
US7405143B2 (en) * 2004-03-25 2008-07-29 Asm International N.V. Method for fabricating a seed layer
JP2006128611A (ja) * 2004-09-30 2006-05-18 Tri Chemical Laboratory Inc 膜形成材料、膜形成方法、及び素子
JP4592373B2 (ja) * 2004-09-30 2010-12-01 株式会社トリケミカル研究所 導電性モリブデンナイトライドゲート電極膜の形成方法
US8993055B2 (en) 2005-10-27 2015-03-31 Asm International N.V. Enhanced thin film deposition
US8268409B2 (en) * 2006-10-25 2012-09-18 Asm America, Inc. Plasma-enhanced deposition of metal carbide films
US7611751B2 (en) 2006-11-01 2009-11-03 Asm America, Inc. Vapor deposition of metal carbide films
US7598170B2 (en) * 2007-01-26 2009-10-06 Asm America, Inc. Plasma-enhanced ALD of tantalum nitride films
US7595270B2 (en) * 2007-01-26 2009-09-29 Asm America, Inc. Passivated stoichiometric metal nitride films
US7713874B2 (en) * 2007-05-02 2010-05-11 Asm America, Inc. Periodic plasma annealing in an ALD-type process
US8017182B2 (en) * 2007-06-21 2011-09-13 Asm International N.V. Method for depositing thin films by mixed pulsed CVD and ALD
US7638170B2 (en) 2007-06-21 2009-12-29 Asm International N.V. Low resistivity metal carbonitride thin film deposition by atomic layer deposition
WO2009129332A2 (en) 2008-04-16 2009-10-22 Asm America, Inc. Atomic layer deposition of metal carbide films using aluminum hydrocarbon compounds
US7666474B2 (en) 2008-05-07 2010-02-23 Asm America, Inc. Plasma-enhanced pulsed deposition of metal carbide films
US10513772B2 (en) 2009-10-20 2019-12-24 Asm International N.V. Process for passivating dielectric films
US8859417B2 (en) 2013-01-03 2014-10-14 Globalfoundries Inc. Gate electrode(s) and contact structure(s), and methods of fabrication thereof
US9412602B2 (en) 2013-03-13 2016-08-09 Asm Ip Holding B.V. Deposition of smooth metal nitride films
US8841182B1 (en) 2013-03-14 2014-09-23 Asm Ip Holding B.V. Silane and borane treatments for titanium carbide films
US8846550B1 (en) 2013-03-14 2014-09-30 Asm Ip Holding B.V. Silane or borane treatment of metal thin films
US9394609B2 (en) 2014-02-13 2016-07-19 Asm Ip Holding B.V. Atomic layer deposition of aluminum fluoride thin films
US10643925B2 (en) 2014-04-17 2020-05-05 Asm Ip Holding B.V. Fluorine-containing conductive films
US10002936B2 (en) 2014-10-23 2018-06-19 Asm Ip Holding B.V. Titanium aluminum and tantalum aluminum thin films
US9941425B2 (en) 2015-10-16 2018-04-10 Asm Ip Holdings B.V. Photoactive devices and materials
US9786492B2 (en) 2015-11-12 2017-10-10 Asm Ip Holding B.V. Formation of SiOCN thin films
US9786491B2 (en) 2015-11-12 2017-10-10 Asm Ip Holding B.V. Formation of SiOCN thin films
KR102378021B1 (ko) 2016-05-06 2022-03-23 에이에스엠 아이피 홀딩 비.브이. SiOC 박막의 형성
US10186420B2 (en) 2016-11-29 2019-01-22 Asm Ip Holding B.V. Formation of silicon-containing thin films
US10847529B2 (en) 2017-04-13 2020-11-24 Asm Ip Holding B.V. Substrate processing method and device manufactured by the same
US10504901B2 (en) 2017-04-26 2019-12-10 Asm Ip Holding B.V. Substrate processing method and device manufactured using the same
US11158500B2 (en) 2017-05-05 2021-10-26 Asm Ip Holding B.V. Plasma enhanced deposition processes for controlled formation of oxygen containing thin films
US10991573B2 (en) 2017-12-04 2021-04-27 Asm Ip Holding B.V. Uniform deposition of SiOC on dielectric and metal surfaces
US11810766B2 (en) * 2018-07-05 2023-11-07 Applied Materials, Inc. Protection of aluminum process chamber components
CN111254411B (zh) * 2020-01-20 2021-12-03 长江存储科技有限责任公司 金属薄膜的制备方法及金属薄膜结构
KR20220146237A (ko) 2021-04-23 2022-11-01 박나현 친환경 바이오 마스크 및 이의 제조방법

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4404235A (en) * 1981-02-23 1983-09-13 Rca Corporation Method for improving adhesion of metal film on a dielectric surface
JPS6042823A (ja) * 1983-08-19 1985-03-07 Toshiba Corp 薄膜形成方法
US4629635A (en) * 1984-03-16 1986-12-16 Genus, Inc. Process for depositing a low resistivity tungsten silicon composite film on a substrate
US4851295A (en) * 1984-03-16 1989-07-25 Genus, Inc. Low resistivity tungsten silicon composite film
US4650696A (en) * 1985-10-01 1987-03-17 Harris Corporation Process using tungsten for multilevel metallization
US4684542A (en) * 1986-08-11 1987-08-04 International Business Machines Corporation Low pressure chemical vapor deposition of tungsten silicide
JPH0823070B2 (ja) * 1986-09-05 1996-03-06 富士通株式会社 気相成長方法
JPH0772351B2 (ja) * 1986-12-01 1995-08-02 株式会社日立製作所 金属薄膜選択成長方法
US4874642A (en) * 1987-09-03 1989-10-17 Air Products And Chemicals, Inc. Method for depositing a hard, fine-grained, non-columnar alloy of tungsten and carbon on a substrate
NL8800221A (nl) * 1988-01-29 1989-08-16 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting.
US4927713A (en) * 1988-02-08 1990-05-22 Air Products And Chemicals, Inc. High erosion/wear resistant multi-layered coating system
US5037775A (en) * 1988-11-30 1991-08-06 Mcnc Method for selectively depositing single elemental semiconductor material on substrates
WO1993011558A1 (en) * 1991-11-26 1993-06-10 Materials Research Corporation Method of modifying contact resistance in semiconductor devices and articles produced thereby

Also Published As

Publication number Publication date
KR100296533B1 (ko) 2001-10-24
AU4633493A (en) 1994-01-04
US5342652A (en) 1994-08-30
EP0644951B1 (en) 1997-03-12
TW236033B (ja) 1994-12-11
DE69308847D1 (de) 1997-04-17
JPH07508072A (ja) 1995-09-07
JP3228746B2 (ja) 2001-11-12
WO1993025721A1 (en) 1993-12-23
SG47528A1 (en) 1998-04-17
EP0644951A1 (en) 1995-03-29
CA2136862A1 (en) 1993-12-23

Similar Documents

Publication Publication Date Title
DE69308847T2 (de) Verfahren zur abscheidung von wolfram auf titannitrid durch cvd ohne silan
DE69421465T2 (de) Verfahren zur Ablagerung von Silzium-Nitrid auf Siliziumoberflächen
DE69206808T2 (de) Verfahren zur herstellung von titannitridfilmen mit geringem spezifischem widerstand
DE69120446T2 (de) Verfahren zum Herstellen von abgeschiedener Metallschicht, die Aluminium als Hauptkomponente enthält, mit Anwendung von Alkylaluminiumhydrid
DE69603277T2 (de) Verfahren zur plasma aktivierten wärmebehandlung von titannitrid
DE69903531T2 (de) Verfahren zur passivierung einer cvd-kammer
DE69424099T2 (de) Niedertemperaturreinigung von Kaltwand-CVD-Einrichtungen
DE69033760T2 (de) Struktur zum Filtern von Prozessgasen zum Einsatz in einer Kammer für chemische Dampfabscheidung
DE3709066C2 (ja)
DE69806281T2 (de) Verfahren und Vorrichtung zum Herstellen laminierter dünnen Schichten
DE69404564T2 (de) Verfahren zum Herstellen verbesserter CVD Kupferfilme
DE69231389T2 (de) Verfahren zur Herstellung eines elektrischer Kontaktes über einem Silizium-Halbleiterplättchen
DE69205938T2 (de) Verfahren zur Bildung einer Nitridschicht mit Benutzung von vorgewärmtem Ammoniak.
DE69423371T2 (de) Verfahren und vorrichtung zur herstellung dünner schichten
DE69024607T2 (de) Verfahren zur Abscheidung von einem Film mittels eines Alkylaluminiumhydrids
DE69812489T2 (de) Korrosionsbeständiges Bauteil, Waferträger und Verfahren zu deren Herstellung
DE3727264C2 (ja)
CH689640A5 (de) Plasmagestuetztes CVD-Verfahren fuer Titannitrid unter Einsatz von Ammoniak.
DE10065454B4 (de) Verfahren zur Herstellung eines Aluminiumoxidfilms zur Verwendung in einem Halbleitergerät
DE19820147A1 (de) Verfahren zur Bildung einer leitfähigen Schicht mittels eines atomaren Schichtdepositionsprozesses
DE69122069T2 (de) Verfahren zur Herstellung eines aufgedampften Films
DE69231026T2 (de) Vorrichtung und Verfahren zur Herstellung von Metallfilmen
DE69123807T2 (de) Verfahren zum Verbessern der Eigenschaften einer Dünnschicht auf einem Substrat
DE3134702C2 (de) Verfahren zum Ablagern eines schwerschmelzbaren Metalls auf einer dünnen Platte
EP0211318A1 (de) Verfahren zum selektiven Auffüllen von in Isolationsschichten geätzten Kontaktlöchern mit metallisch leitenden Materialien bei der Herstellung von höchstintegrierten Halbleiterschaltungen sowie eine Vorrichtung zur Durchführung des Verfahrens

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: TOKYO ELECTRON LTD., TOKIO/TOKYO, JP

8339 Ceased/non-payment of the annual fee