DE69302936D1 - Verfahren zum Herstellen eines elektrisch leitenden Musters aus Zinn-dotiertem Idiumoxid (ITO) auf einem Substrat - Google Patents

Verfahren zum Herstellen eines elektrisch leitenden Musters aus Zinn-dotiertem Idiumoxid (ITO) auf einem Substrat

Info

Publication number
DE69302936D1
DE69302936D1 DE69302936T DE69302936T DE69302936D1 DE 69302936 D1 DE69302936 D1 DE 69302936D1 DE 69302936 T DE69302936 T DE 69302936T DE 69302936 T DE69302936 T DE 69302936T DE 69302936 D1 DE69302936 D1 DE 69302936D1
Authority
DE
Germany
Prior art keywords
idium
ito
doped
tin
oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69302936T
Other languages
English (en)
Other versions
DE69302936T2 (de
Inventor
Monica Scholten
Den Meerakker Johannes Eng Van
Johannes Wilhelmus Mari Jacobs
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronics NV filed Critical Philips Electronics NV
Publication of DE69302936D1 publication Critical patent/DE69302936D1/de
Application granted granted Critical
Publication of DE69302936T2 publication Critical patent/DE69302936T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Mathematical Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Liquid Crystal (AREA)
  • Weting (AREA)
  • ing And Chemical Polishing (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Manufacturing Of Electric Cables (AREA)
DE69302936T 1992-03-13 1993-03-05 Verfahren zum Herstellen eines elektrisch leitenden Musters aus Zinn-dotiertem Idiumoxid (ITO) auf einem Substrat Expired - Fee Related DE69302936T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP92200732 1992-03-13

Publications (2)

Publication Number Publication Date
DE69302936D1 true DE69302936D1 (de) 1996-07-11
DE69302936T2 DE69302936T2 (de) 1996-12-19

Family

ID=8210479

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69302936T Expired - Fee Related DE69302936T2 (de) 1992-03-13 1993-03-05 Verfahren zum Herstellen eines elektrisch leitenden Musters aus Zinn-dotiertem Idiumoxid (ITO) auf einem Substrat

Country Status (4)

Country Link
US (1) US5366588A (de)
EP (1) EP0560442B1 (de)
JP (1) JPH0660744A (de)
DE (1) DE69302936T2 (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3044418B2 (ja) * 1991-10-30 2000-05-22 キヤノン株式会社 電極基板の製造方法
US6005260A (en) * 1993-10-19 1999-12-21 U.S. Philips Corporation Non-linear switching element of an electro-optical display device with metallic protective layer
KR100450186B1 (ko) * 1996-11-08 2004-11-20 도와 고교 가부시키가이샤 아이티오의 원료분말과 소결체 및 그 제조방법
KR100590916B1 (ko) * 1999-06-23 2006-06-19 비오이 하이디스 테크놀로지 주식회사 박막 트랜지스터 어레이 기판의 제조방법
KR100532080B1 (ko) * 2001-05-07 2005-11-30 엘지.필립스 엘시디 주식회사 비정질 인듐 틴 옥사이드 식각용액 및 이를 이용한 액정표시소자의 제조방법
US8307549B2 (en) * 2001-11-20 2012-11-13 Touchsensor Technologies, Llc Method of making an electrical circuit
US20040035717A1 (en) * 2002-08-21 2004-02-26 Casio Micronics Co. , Ltd. Chemical treatment method and chemical treatment apparatus
US7410906B2 (en) * 2004-07-16 2008-08-12 Fujifilm Corporation Functional device and method for producing the same, and image pickup device and method for producing the same
KR100636162B1 (ko) * 2004-08-25 2006-10-18 삼성전자주식회사 소프트웨어 보호 방법 및 그 장치
KR101337263B1 (ko) * 2004-08-25 2013-12-05 동우 화인켐 주식회사 인듐 산화막의 식각액 조성물 및 이를 이용한 식각 방법
WO2007086280A1 (ja) * 2006-01-25 2007-08-02 Idemitsu Kosan Co., Ltd. 積層構造及びそれを用いた電気回路用電極
JP5328083B2 (ja) * 2006-08-01 2013-10-30 キヤノン株式会社 酸化物のエッチング方法
US20080061030A1 (en) * 2006-09-13 2008-03-13 Taiwan Semiconductor Manufacturing Co., Ltd. Methods for patterning indium tin oxide films
JP5262478B2 (ja) * 2008-09-11 2013-08-14 東ソー株式会社 透明電極用のエッチング液
BR112012017239A2 (pt) * 2010-01-15 2016-03-22 Sharp Kk dispositivo de vídeo de cristal líquido e método para a fabricação do mesmo
US8927235B2 (en) 2010-12-06 2015-01-06 Novozymes A/S Methods of hydrolyzing oligomers in hemicellulosic liquor
DE102011120328A1 (de) * 2011-12-06 2013-06-06 Forschungszentrum Jülich GmbH Ätzverfahren für Metall-Mischoxide
CN104021735B (zh) * 2014-05-23 2016-08-17 京东方科技集团股份有限公司 一种量子点发光显示屏及其制备方法
US9868902B2 (en) 2014-07-17 2018-01-16 Soulbrain Co., Ltd. Composition for etching

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3837944A (en) * 1972-09-01 1974-09-24 Nat Starch Chem Corp Selective etching of metal oxides of tin or indium
US3979240A (en) * 1975-05-02 1976-09-07 General Electric Company Method of etching indium tin oxide
NL7509341A (nl) * 1975-08-06 1977-02-08 Philips Nv Werkwijze voor de vervaardiging van elektrisch geleidende indiumoxide patronen op een isole- rende drager.
US4448637A (en) * 1981-12-28 1984-05-15 Daicel Chemical Industries, Ltd. Etching method of conductive film
JPS62299035A (ja) * 1986-06-18 1987-12-26 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JPS6451622A (en) * 1987-08-24 1989-02-27 Nippon Telegraph & Telephone Surface treating method

Also Published As

Publication number Publication date
EP0560442A1 (de) 1993-09-15
DE69302936T2 (de) 1996-12-19
JPH0660744A (ja) 1994-03-04
US5366588A (en) 1994-11-22
EP0560442B1 (de) 1996-06-05

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: KONINKLIJKE PHILIPS ELECTRONICS N.V., EINDHOVEN, N

8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee