JPS6451622A - Surface treating method - Google Patents
Surface treating methodInfo
- Publication number
- JPS6451622A JPS6451622A JP20817687A JP20817687A JPS6451622A JP S6451622 A JPS6451622 A JP S6451622A JP 20817687 A JP20817687 A JP 20817687A JP 20817687 A JP20817687 A JP 20817687A JP S6451622 A JPS6451622 A JP S6451622A
- Authority
- JP
- Japan
- Prior art keywords
- acid
- film
- treatment
- resist
- oxide thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To increase the adhesion of an oxide thin-film and a resist, to prevent penetration between the oxide thin-film and the resist of an etchant and to process the fine pattern of the oxide thin-film by changing a hydrophilic surface into a hydrophobic surface through surface hydrophobic treatment after immersion in an acid before the application of the resist in the photographic processing process of the oxide thin-film. CONSTITUTION:Hydrochloric acid, nitric acid, sulfuric acid, acetic acid, phosphoric acid or a mixed acid containing these acids is cited as an acid used in the pretreatment of an oxide semiconductor and an oxide conductive material. The surface of ITO turned into strong hydrophilic properties through acid treatment is surface hydrophobic-treated. Alkylation treatment or surface active agent adhesion treatment is executed concretely. Hexamethyldisilazane is quoted as an alkylating agent. When the pattern of an ITO film is formed through such surface treatment before the application of a resist, excellent fine processing is enabled even when a substrate is shaped to a waved form.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20817687A JPS6451622A (en) | 1987-08-24 | 1987-08-24 | Surface treating method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20817687A JPS6451622A (en) | 1987-08-24 | 1987-08-24 | Surface treating method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6451622A true JPS6451622A (en) | 1989-02-27 |
Family
ID=16551919
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20817687A Pending JPS6451622A (en) | 1987-08-24 | 1987-08-24 | Surface treating method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6451622A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5366588A (en) * | 1992-03-13 | 1994-11-22 | U.S. Philips Corporation | Method of manufacturing an electrically conductive pattern of tin-doped indium oxide (ITO) on a substrate |
| JPH0766131A (en) * | 1993-08-24 | 1995-03-10 | Canon Sales Co Inc | Film deposition method |
| US5846692A (en) * | 1995-12-04 | 1998-12-08 | Matsushita Electric Industrial Co., Ltd. | Pattern formation method |
| KR20020006735A (en) * | 2000-07-13 | 2002-01-26 | 이형도 | Surface treating material and surface treating method of micro-device |
| CN113054060A (en) * | 2021-03-18 | 2021-06-29 | 厦门乾照光电股份有限公司 | Preparation method of light-emitting element and light-emitting element |
-
1987
- 1987-08-24 JP JP20817687A patent/JPS6451622A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5366588A (en) * | 1992-03-13 | 1994-11-22 | U.S. Philips Corporation | Method of manufacturing an electrically conductive pattern of tin-doped indium oxide (ITO) on a substrate |
| JPH0766131A (en) * | 1993-08-24 | 1995-03-10 | Canon Sales Co Inc | Film deposition method |
| US5846692A (en) * | 1995-12-04 | 1998-12-08 | Matsushita Electric Industrial Co., Ltd. | Pattern formation method |
| KR20020006735A (en) * | 2000-07-13 | 2002-01-26 | 이형도 | Surface treating material and surface treating method of micro-device |
| CN113054060A (en) * | 2021-03-18 | 2021-06-29 | 厦门乾照光电股份有限公司 | Preparation method of light-emitting element and light-emitting element |
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