DE69302398T2 - Vorrichtung für Mikrowellen - Plasma - CVD - Google Patents

Vorrichtung für Mikrowellen - Plasma - CVD

Info

Publication number
DE69302398T2
DE69302398T2 DE69302398T DE69302398T DE69302398T2 DE 69302398 T2 DE69302398 T2 DE 69302398T2 DE 69302398 T DE69302398 T DE 69302398T DE 69302398 T DE69302398 T DE 69302398T DE 69302398 T2 DE69302398 T2 DE 69302398T2
Authority
DE
Germany
Prior art keywords
plasma cvd
microwave plasma
microwave
cvd
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69302398T
Other languages
English (en)
Other versions
DE69302398D1 (de
Inventor
Ghislaine Seiberras
Claude Indrigo
Remy Mevrel
Philippe Leprince
Michel Bejet
Pennec Claude Le
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Office National dEtudes et de Recherches Aerospatiales ONERA
Original Assignee
Office National dEtudes et de Recherches Aerospatiales ONERA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Office National dEtudes et de Recherches Aerospatiales ONERA filed Critical Office National dEtudes et de Recherches Aerospatiales ONERA
Application granted granted Critical
Publication of DE69302398D1 publication Critical patent/DE69302398D1/de
Publication of DE69302398T2 publication Critical patent/DE69302398T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45512—Premixing before introduction in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
DE69302398T 1992-09-24 1993-09-23 Vorrichtung für Mikrowellen - Plasma - CVD Expired - Fee Related DE69302398T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR9211391A FR2695944B1 (fr) 1992-09-24 1992-09-24 Appareil de dépôt chimique en phase vapeur activé par un plasma micro-ondes.
PCT/FR1993/000926 WO1994006950A1 (fr) 1992-09-24 1993-09-23 Appareil de depot chimique en phase vapeur active par un plasma micro-ondes

Publications (2)

Publication Number Publication Date
DE69302398D1 DE69302398D1 (de) 1996-05-30
DE69302398T2 true DE69302398T2 (de) 1996-08-14

Family

ID=9433844

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69302398T Expired - Fee Related DE69302398T2 (de) 1992-09-24 1993-09-23 Vorrichtung für Mikrowellen - Plasma - CVD

Country Status (6)

Country Link
US (1) US5603771A (de)
EP (1) EP0665903B1 (de)
CA (1) CA2143435A1 (de)
DE (1) DE69302398T2 (de)
FR (1) FR2695944B1 (de)
WO (1) WO1994006950A1 (de)

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US5981088A (en) * 1997-08-18 1999-11-09 General Electric Company Thermal barrier coating system
FI20000099A0 (fi) 2000-01-18 2000-01-18 Asm Microchemistry Ltd Menetelmä metalliohutkalvojen kasvattamiseksi
AU2002333601A1 (en) * 2001-09-14 2003-04-01 Asm America, Inc. Metal nitride deposition by ald using gettering reactant
US7405143B2 (en) * 2004-03-25 2008-07-29 Asm International N.V. Method for fabricating a seed layer
GB0516695D0 (en) * 2005-08-15 2005-09-21 Boc Group Plc Microwave plasma reactor
US8993055B2 (en) 2005-10-27 2015-03-31 Asm International N.V. Enhanced thin film deposition
US7603963B2 (en) * 2006-05-02 2009-10-20 Babcock & Wilcox Technical Services Y-12, Llc Controlled zone microwave plasma system
US8268409B2 (en) * 2006-10-25 2012-09-18 Asm America, Inc. Plasma-enhanced deposition of metal carbide films
US7611751B2 (en) 2006-11-01 2009-11-03 Asm America, Inc. Vapor deposition of metal carbide films
US7713874B2 (en) * 2007-05-02 2010-05-11 Asm America, Inc. Periodic plasma annealing in an ALD-type process
WO2009129332A2 (en) * 2008-04-16 2009-10-22 Asm America, Inc. Atomic layer deposition of metal carbide films using aluminum hydrocarbon compounds
US7666474B2 (en) 2008-05-07 2010-02-23 Asm America, Inc. Plasma-enhanced pulsed deposition of metal carbide films
US8316797B2 (en) 2008-06-16 2012-11-27 Board of Trustees of Michigan State University Fraunhofer USA Microwave plasma reactors
US10513772B2 (en) 2009-10-20 2019-12-24 Asm International N.V. Process for passivating dielectric films
EP2707521B1 (de) 2011-05-13 2018-08-08 Board Of Trustees Of Michigan State University Verbesserte mikrowellen-plasmareaktoren
US20120326803A1 (en) * 2011-06-24 2012-12-27 Amarante Technologies, Inc. Microwave resonant cavity
US9458014B2 (en) 2012-12-28 2016-10-04 General Electronic Company Sytems and method for CO2 capture and H2 separation with three water-gas shift reactions and warm desulfurization
US9412602B2 (en) 2013-03-13 2016-08-09 Asm Ip Holding B.V. Deposition of smooth metal nitride films
US8841182B1 (en) 2013-03-14 2014-09-23 Asm Ip Holding B.V. Silane and borane treatments for titanium carbide films
US8846550B1 (en) 2013-03-14 2014-09-30 Asm Ip Holding B.V. Silane or borane treatment of metal thin films
FR3013996B1 (fr) 2013-12-02 2017-04-28 Office National Detudes Et De Rech Aerospatiales Onera Procede de reparation locale de barrieres thermiques
FR3014115B1 (fr) 2013-12-02 2017-04-28 Office National Detudes Et De Rech Aerospatiales Onera Procede et systeme de depot d'oxyde sur un composant poreux
US9394609B2 (en) 2014-02-13 2016-07-19 Asm Ip Holding B.V. Atomic layer deposition of aluminum fluoride thin films
US10643925B2 (en) 2014-04-17 2020-05-05 Asm Ip Holding B.V. Fluorine-containing conductive films
KR102216575B1 (ko) 2014-10-23 2021-02-18 에이에스엠 아이피 홀딩 비.브이. 티타늄 알루미늄 및 탄탈륨 알루미늄 박막들
US9941425B2 (en) 2015-10-16 2018-04-10 Asm Ip Holdings B.V. Photoactive devices and materials
US9786491B2 (en) 2015-11-12 2017-10-10 Asm Ip Holding B.V. Formation of SiOCN thin films
US9786492B2 (en) 2015-11-12 2017-10-10 Asm Ip Holding B.V. Formation of SiOCN thin films
KR102378021B1 (ko) 2016-05-06 2022-03-23 에이에스엠 아이피 홀딩 비.브이. SiOC 박막의 형성
US10186420B2 (en) 2016-11-29 2019-01-22 Asm Ip Holding B.V. Formation of silicon-containing thin films
US10847529B2 (en) 2017-04-13 2020-11-24 Asm Ip Holding B.V. Substrate processing method and device manufactured by the same
US10504901B2 (en) 2017-04-26 2019-12-10 Asm Ip Holding B.V. Substrate processing method and device manufactured using the same
CN110546302B (zh) 2017-05-05 2022-05-27 Asm Ip 控股有限公司 用于受控形成含氧薄膜的等离子体增强沉积方法
TWI761636B (zh) 2017-12-04 2022-04-21 荷蘭商Ａｓｍ Ｉｐ控股公司 電漿增強型原子層沉積製程及沉積碳氧化矽薄膜的方法

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KR910007382B1 (ko) * 1987-08-07 1991-09-25 가부시기가이샤 히다찌세이사꾸쇼 초전도 재료 및 초전도 박막의 제조방법
JPH01136971A (ja) * 1987-11-20 1989-05-30 Fujitsu Ltd 気相成長装置
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FR2631199B1 (fr) * 1988-05-09 1991-03-15 Centre Nat Rech Scient Reacteur a plasma
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US5093150A (en) * 1989-04-20 1992-03-03 Alps Electric Co., Ltd. Synthesis method by plasma chemical vapor deposition
DE69005938T2 (de) * 1989-07-31 1994-05-19 Matsushita Electric Ind Co Ltd Vorrichtung zur Herstellung von einer dünnen diamantartigen Kohlenstoffschicht.
DE69027496T2 (de) * 1989-09-26 1996-10-31 Canon Kk Gasversorgungsvorrichtung und ihre Verwendung für eine Filmabscheidungsanlage
US5316796A (en) * 1990-03-09 1994-05-31 Nippon Telegraph And Telephone Corporation Process for growing a thin metallic film
US5447569A (en) * 1990-12-12 1995-09-05 Hiskes; Ronald MOCVD system for forming superconducting thin films
JP3222518B2 (ja) * 1991-12-26 2001-10-29 キヤノン株式会社 液体原料気化装置および薄膜形成装置
JP3203754B2 (ja) * 1992-03-30 2001-08-27 住友電気工業株式会社 ダイヤモンドの製造法および製造装置
US5435850A (en) * 1993-09-17 1995-07-25 Fei Company Gas injection system
US5356451A (en) * 1993-12-20 1994-10-18 Corning Incorporated Method and apparatus for vaporization of liquid reactants
US5451258A (en) * 1994-05-11 1995-09-19 Materials Research Corporation Apparatus and method for improved delivery of vaporized reactant gases to a reaction chamber
JP4014013B2 (ja) * 1997-07-18 2007-11-28 株式会社デンソー 内燃機関のイオン電流検出装置

Also Published As

Publication number Publication date
CA2143435A1 (fr) 1994-03-31
EP0665903A1 (de) 1995-08-09
US5603771A (en) 1997-02-18
DE69302398D1 (de) 1996-05-30
FR2695944B1 (fr) 1994-11-18
WO1994006950A1 (fr) 1994-03-31
EP0665903B1 (de) 1996-04-24
FR2695944A1 (fr) 1994-03-25

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee