DE69302398D1 - Vorrichtung für Mikrowellen - Plasma - CVD - Google Patents
Vorrichtung für Mikrowellen - Plasma - CVDInfo
- Publication number
- DE69302398D1 DE69302398D1 DE69302398T DE69302398T DE69302398D1 DE 69302398 D1 DE69302398 D1 DE 69302398D1 DE 69302398 T DE69302398 T DE 69302398T DE 69302398 T DE69302398 T DE 69302398T DE 69302398 D1 DE69302398 D1 DE 69302398D1
- Authority
- DE
- Germany
- Prior art keywords
- plasma cvd
- microwave plasma
- microwave
- cvd
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45512—Premixing before introduction in the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9211391A FR2695944B1 (fr) | 1992-09-24 | 1992-09-24 | Appareil de dépôt chimique en phase vapeur activé par un plasma micro-ondes. |
PCT/FR1993/000926 WO1994006950A1 (fr) | 1992-09-24 | 1993-09-23 | Appareil de depot chimique en phase vapeur active par un plasma micro-ondes |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69302398D1 true DE69302398D1 (de) | 1996-05-30 |
DE69302398T2 DE69302398T2 (de) | 1996-08-14 |
Family
ID=9433844
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69302398T Expired - Fee Related DE69302398T2 (de) | 1992-09-24 | 1993-09-23 | Vorrichtung für Mikrowellen - Plasma - CVD |
Country Status (6)
Country | Link |
---|---|
US (1) | US5603771A (de) |
EP (1) | EP0665903B1 (de) |
CA (1) | CA2143435A1 (de) |
DE (1) | DE69302398T2 (de) |
FR (1) | FR2695944B1 (de) |
WO (1) | WO1994006950A1 (de) |
Families Citing this family (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5981088A (en) * | 1997-08-18 | 1999-11-09 | General Electric Company | Thermal barrier coating system |
FI20000099A0 (fi) | 2000-01-18 | 2000-01-18 | Asm Microchemistry Ltd | Menetelmä metalliohutkalvojen kasvattamiseksi |
WO2003025243A2 (en) * | 2001-09-14 | 2003-03-27 | Asm International N.V. | Metal nitride deposition by ald using gettering reactant |
US7405143B2 (en) * | 2004-03-25 | 2008-07-29 | Asm International N.V. | Method for fabricating a seed layer |
GB0516695D0 (en) * | 2005-08-15 | 2005-09-21 | Boc Group Plc | Microwave plasma reactor |
US8993055B2 (en) | 2005-10-27 | 2015-03-31 | Asm International N.V. | Enhanced thin film deposition |
US7603963B2 (en) * | 2006-05-02 | 2009-10-20 | Babcock & Wilcox Technical Services Y-12, Llc | Controlled zone microwave plasma system |
US8268409B2 (en) * | 2006-10-25 | 2012-09-18 | Asm America, Inc. | Plasma-enhanced deposition of metal carbide films |
US7611751B2 (en) | 2006-11-01 | 2009-11-03 | Asm America, Inc. | Vapor deposition of metal carbide films |
US7713874B2 (en) * | 2007-05-02 | 2010-05-11 | Asm America, Inc. | Periodic plasma annealing in an ALD-type process |
JP5551681B2 (ja) * | 2008-04-16 | 2014-07-16 | エーエスエム アメリカ インコーポレイテッド | アルミニウム炭化水素化合物を使用する金属炭化物膜の原子層堆積 |
US7666474B2 (en) | 2008-05-07 | 2010-02-23 | Asm America, Inc. | Plasma-enhanced pulsed deposition of metal carbide films |
US8316797B2 (en) | 2008-06-16 | 2012-11-27 | Board of Trustees of Michigan State University Fraunhofer USA | Microwave plasma reactors |
JP5809152B2 (ja) | 2009-10-20 | 2015-11-10 | エーエスエム インターナショナル エヌ.ヴェー.Asm International N.V. | 誘電体膜をパッシベーションする方法 |
EP2707521B1 (de) | 2011-05-13 | 2018-08-08 | Board Of Trustees Of Michigan State University | Verbesserte mikrowellen-plasmareaktoren |
KR20140026605A (ko) * | 2011-06-24 | 2014-03-05 | 아마란테 테크놀러지스 인코포레이티드 | 마이크로웨이브 공진 캐비티 |
US9458014B2 (en) | 2012-12-28 | 2016-10-04 | General Electronic Company | Sytems and method for CO2 capture and H2 separation with three water-gas shift reactions and warm desulfurization |
US9412602B2 (en) | 2013-03-13 | 2016-08-09 | Asm Ip Holding B.V. | Deposition of smooth metal nitride films |
US8846550B1 (en) | 2013-03-14 | 2014-09-30 | Asm Ip Holding B.V. | Silane or borane treatment of metal thin films |
US8841182B1 (en) | 2013-03-14 | 2014-09-23 | Asm Ip Holding B.V. | Silane and borane treatments for titanium carbide films |
FR3014115B1 (fr) | 2013-12-02 | 2017-04-28 | Office National Detudes Et De Rech Aerospatiales Onera | Procede et systeme de depot d'oxyde sur un composant poreux |
FR3013996B1 (fr) | 2013-12-02 | 2017-04-28 | Office National Detudes Et De Rech Aerospatiales Onera | Procede de reparation locale de barrieres thermiques |
US9394609B2 (en) | 2014-02-13 | 2016-07-19 | Asm Ip Holding B.V. | Atomic layer deposition of aluminum fluoride thin films |
US10643925B2 (en) | 2014-04-17 | 2020-05-05 | Asm Ip Holding B.V. | Fluorine-containing conductive films |
US10002936B2 (en) | 2014-10-23 | 2018-06-19 | Asm Ip Holding B.V. | Titanium aluminum and tantalum aluminum thin films |
US9941425B2 (en) | 2015-10-16 | 2018-04-10 | Asm Ip Holdings B.V. | Photoactive devices and materials |
US9786491B2 (en) | 2015-11-12 | 2017-10-10 | Asm Ip Holding B.V. | Formation of SiOCN thin films |
US9786492B2 (en) | 2015-11-12 | 2017-10-10 | Asm Ip Holding B.V. | Formation of SiOCN thin films |
KR102378021B1 (ko) | 2016-05-06 | 2022-03-23 | 에이에스엠 아이피 홀딩 비.브이. | SiOC 박막의 형성 |
US10186420B2 (en) | 2016-11-29 | 2019-01-22 | Asm Ip Holding B.V. | Formation of silicon-containing thin films |
US10847529B2 (en) | 2017-04-13 | 2020-11-24 | Asm Ip Holding B.V. | Substrate processing method and device manufactured by the same |
US10504901B2 (en) | 2017-04-26 | 2019-12-10 | Asm Ip Holding B.V. | Substrate processing method and device manufactured using the same |
US11158500B2 (en) | 2017-05-05 | 2021-10-26 | Asm Ip Holding B.V. | Plasma enhanced deposition processes for controlled formation of oxygen containing thin films |
US10991573B2 (en) | 2017-12-04 | 2021-04-27 | Asm Ip Holding B.V. | Uniform deposition of SiOC on dielectric and metal surfaces |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR910007382B1 (ko) * | 1987-08-07 | 1991-09-25 | 가부시기가이샤 히다찌세이사꾸쇼 | 초전도 재료 및 초전도 박막의 제조방법 |
JPH01136971A (ja) * | 1987-11-20 | 1989-05-30 | Fujitsu Ltd | 気相成長装置 |
EP0319347B1 (de) * | 1987-12-04 | 1994-08-03 | Research Development Corporation of Japan | Vakuumbeschichtungsanlage |
FR2631199B1 (fr) * | 1988-05-09 | 1991-03-15 | Centre Nat Rech Scient | Reacteur a plasma |
US4880614A (en) * | 1988-11-03 | 1989-11-14 | Allied-Signal Inc. | Ceramic thermal barrier coating with alumina interlayer |
US5093150A (en) * | 1989-04-20 | 1992-03-03 | Alps Electric Co., Ltd. | Synthesis method by plasma chemical vapor deposition |
DE69005938T2 (de) * | 1989-07-31 | 1994-05-19 | Matsushita Electric Ind Co Ltd | Vorrichtung zur Herstellung von einer dünnen diamantartigen Kohlenstoffschicht. |
EP0420596B1 (de) * | 1989-09-26 | 1996-06-19 | Canon Kabushiki Kaisha | Gasversorgungsvorrichtung und ihre Verwendung für eine Filmabscheidungsanlage |
US5316796A (en) * | 1990-03-09 | 1994-05-31 | Nippon Telegraph And Telephone Corporation | Process for growing a thin metallic film |
US5447569A (en) * | 1990-12-12 | 1995-09-05 | Hiskes; Ronald | MOCVD system for forming superconducting thin films |
JP3222518B2 (ja) * | 1991-12-26 | 2001-10-29 | キヤノン株式会社 | 液体原料気化装置および薄膜形成装置 |
JP3203754B2 (ja) * | 1992-03-30 | 2001-08-27 | 住友電気工業株式会社 | ダイヤモンドの製造法および製造装置 |
US5435850A (en) * | 1993-09-17 | 1995-07-25 | Fei Company | Gas injection system |
US5356451A (en) * | 1993-12-20 | 1994-10-18 | Corning Incorporated | Method and apparatus for vaporization of liquid reactants |
US5451258A (en) * | 1994-05-11 | 1995-09-19 | Materials Research Corporation | Apparatus and method for improved delivery of vaporized reactant gases to a reaction chamber |
JP4014013B2 (ja) * | 1997-07-18 | 2007-11-28 | 株式会社デンソー | 内燃機関のイオン電流検出装置 |
-
1992
- 1992-09-24 FR FR9211391A patent/FR2695944B1/fr not_active Expired - Fee Related
-
1993
- 1993-09-23 DE DE69302398T patent/DE69302398T2/de not_active Expired - Fee Related
- 1993-09-23 WO PCT/FR1993/000926 patent/WO1994006950A1/fr active IP Right Grant
- 1993-09-23 EP EP93920922A patent/EP0665903B1/de not_active Expired - Lifetime
- 1993-09-23 US US08/403,780 patent/US5603771A/en not_active Expired - Lifetime
- 1993-09-23 CA CA002143435A patent/CA2143435A1/fr not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
CA2143435A1 (fr) | 1994-03-31 |
FR2695944B1 (fr) | 1994-11-18 |
US5603771A (en) | 1997-02-18 |
EP0665903A1 (de) | 1995-08-09 |
EP0665903B1 (de) | 1996-04-24 |
FR2695944A1 (fr) | 1994-03-25 |
WO1994006950A1 (fr) | 1994-03-31 |
DE69302398T2 (de) | 1996-08-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE69302398D1 (de) | Vorrichtung für Mikrowellen - Plasma - CVD | |
DE59301634D1 (de) | Vorrichtung zur Versorgung von CVD-Beschichtungseinrichtungen | |
DE69206187D1 (de) | Gerät für Plasmaverfahren. | |
DE69026136D1 (de) | Spektroskopischer Plasmabrenner für Mikrowellenplasma | |
DE69408405D1 (de) | Plasma-CVD-Verfahren und Vorrichtung | |
DE69524671D1 (de) | Mikrowellenplasma-Bearbeitungssystem | |
GB2239875B (en) | Device for laser plasma coating | |
DE69318480D1 (de) | Plasmabearbeitungsgerät | |
DE68920613D1 (de) | Mikrowellenplasmavorrichtung für ausgedehnte Oberfläche. | |
DE69530128D1 (de) | Sicherheit für rechnerbetriebsmittel | |
DE69231405D1 (de) | Mikrowellenplasma-bearbeitungsvorrichtung | |
DE69511421D1 (de) | Vorrichtung für handgelenkstütze | |
DE59203085D1 (de) | Vorrichtung für reaktive Ionenätz- und plasmaunterstützte CVD-Verfahren. | |
DE69317592D1 (de) | Plasmaadressierte elektrooptische Vorrichtung | |
DE69506323D1 (de) | Mikrowellenplasma-Bearbeitungssystem | |
DE69322437D1 (de) | Schnittstelle für Jontophorese | |
DE69307445D1 (de) | Schichtbildende Vorrichtung | |
DE69308799D1 (de) | Hochfrequenzheizer für Bolzen | |
DE69313705D1 (de) | Plasmaadressierte elektrooptische Vorrichtung | |
FI930850A0 (fi) | Em kemisk process | |
DE69702989D1 (de) | Vorrichtung für aufgehängte Paneele | |
DE69830882D1 (de) | Montagevorrichtung für Induktionsplasmabrenner | |
DE69322058D1 (de) | Plasma-Ätzverfahren | |
DE69314336D1 (de) | Haltevorrichtung für speisen | |
DE69505417D1 (de) | Konvergente vorrichtung für plasmajet |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |