DE69224335D1 - Verfahren zur Herstellung eines optischen Halbleiterelements - Google Patents

Verfahren zur Herstellung eines optischen Halbleiterelements

Info

Publication number
DE69224335D1
DE69224335D1 DE69224335T DE69224335T DE69224335D1 DE 69224335 D1 DE69224335 D1 DE 69224335D1 DE 69224335 T DE69224335 T DE 69224335T DE 69224335 T DE69224335 T DE 69224335T DE 69224335 D1 DE69224335 D1 DE 69224335D1
Authority
DE
Germany
Prior art keywords
manufacturing
optical element
semiconductor optical
semiconductor
optical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69224335T
Other languages
English (en)
Other versions
DE69224335T2 (de
Inventor
Shotaro Kitamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Application granted granted Critical
Publication of DE69224335D1 publication Critical patent/DE69224335D1/de
Publication of DE69224335T2 publication Critical patent/DE69224335T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02392—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02543—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2272—Buried mesa structure ; Striped active layer grown by a mask induced selective growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • H01S5/5036—Amplifier structures not provided for in groups H01S5/02 - H01S5/30 the arrangement being polarisation-selective
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/026—Deposition thru hole in mask

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Geometry (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Semiconductor Lasers (AREA)
  • Recrystallisation Techniques (AREA)
DE69224335T 1991-07-31 1992-07-30 Verfahren zur Herstellung eines optischen Halbleiterelements Expired - Fee Related DE69224335T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3216027A JP2876839B2 (ja) 1991-07-31 1991-07-31 光半導体素子の製造方法

Publications (2)

Publication Number Publication Date
DE69224335D1 true DE69224335D1 (de) 1998-03-12
DE69224335T2 DE69224335T2 (de) 1998-09-17

Family

ID=16682152

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69224335T Expired - Fee Related DE69224335T2 (de) 1991-07-31 1992-07-30 Verfahren zur Herstellung eines optischen Halbleiterelements

Country Status (4)

Country Link
US (1) US5374587A (de)
EP (1) EP0525779B1 (de)
JP (1) JP2876839B2 (de)
DE (1) DE69224335T2 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2746065B2 (ja) * 1993-07-29 1998-04-28 日本電気株式会社 光半導体素子の製造方法
JP2682421B2 (ja) * 1993-12-28 1997-11-26 日本電気株式会社 半導体光集積回路の製造方法
FR2745961B1 (fr) * 1996-03-05 1998-04-10 Alcatel Optronics Amplificateur optique a semi-conducteur
DE19911717A1 (de) * 1999-03-16 2000-09-28 Osram Opto Semiconductors Gmbh Monolithisches elektrolumineszierendes Bauelement und Verfahren zu dessen Herstellung
JP2004048080A (ja) * 2000-05-17 2004-02-12 Sony Corp 半導体レーザの製造方法
JP2004048079A (ja) * 2000-05-17 2004-02-12 Sony Corp 半導体レーザ
US6731424B1 (en) * 2001-03-15 2004-05-04 Onetta, Inc. Dynamic gain flattening in an optical communication system
JP4732155B2 (ja) 2004-12-28 2011-07-27 キヤノン株式会社 画像処理装置及び制御方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4077817A (en) * 1975-12-31 1978-03-07 Texas Instruments Incorporated Making a semiconductor laser structure by liquid phase epitaxy
JPS568890A (en) * 1979-06-27 1981-01-29 Nec Corp Semiconductor laser and manufacture thereof
JPS611081A (ja) * 1984-06-13 1986-01-07 Nec Corp 半導体レ−ザ
JPS62144385A (ja) * 1985-12-19 1987-06-27 Fujitsu Ltd 半導体レ−ザ及びその製造方法
US4946802A (en) * 1986-05-31 1990-08-07 Mitsubishi Denki Kabushiki Kaisha Semiconductor laser device fabricating method
GB8618373D0 (en) * 1986-07-28 1986-09-03 British Telecomm Fabrication technique
JPH0799785B2 (ja) * 1986-10-09 1995-10-25 松下電器産業株式会社 半導体レ−ザ装置
JPH01220492A (ja) * 1988-02-26 1989-09-04 Mitsubishi Electric Corp 半導体レーザ装置及びその製造方法
KR900009229B1 (ko) * 1988-04-28 1990-12-24 한국 과학기술원 선택적 에피택시법에 의한 표면 방출형 AlGaAs/GaAs 반도체 레이저 다이오드의 제조방법
GB2222307B (en) * 1988-07-22 1992-04-01 Mitsubishi Electric Corp Semiconductor laser
DE68914980T2 (de) * 1988-09-01 1994-09-22 Seiko Epson Corp Lichtausstrahlende anordnung und verfahren zur herstellung.
JPH0314280A (ja) * 1989-06-13 1991-01-22 Nec Corp 大出力半導体レーザ及びその製造方法
JPH03126283A (ja) * 1989-10-11 1991-05-29 Toshiba Corp 窓構造半導体レーザ素子の製造方法
US5070510A (en) * 1989-12-12 1991-12-03 Sharp Kabushiki Kaisha Semiconductor laser device
US5250462A (en) * 1990-08-24 1993-10-05 Nec Corporation Method for fabricating an optical semiconductor device
JPH04349622A (ja) * 1991-05-28 1992-12-04 Eastman Kodak Japan Kk 量子デバイス製造方法

Also Published As

Publication number Publication date
DE69224335T2 (de) 1998-09-17
JPH0537092A (ja) 1993-02-12
EP0525779B1 (de) 1998-02-04
US5374587A (en) 1994-12-20
EP0525779A2 (de) 1993-02-03
EP0525779A3 (en) 1993-04-07
JP2876839B2 (ja) 1999-03-31

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee