DE69104650D1 - Verfahren zur Herstellung eines Halbleiterlasers. - Google Patents

Verfahren zur Herstellung eines Halbleiterlasers.

Info

Publication number
DE69104650D1
DE69104650D1 DE69104650T DE69104650T DE69104650D1 DE 69104650 D1 DE69104650 D1 DE 69104650D1 DE 69104650 T DE69104650 T DE 69104650T DE 69104650 T DE69104650 T DE 69104650T DE 69104650 D1 DE69104650 D1 DE 69104650D1
Authority
DE
Germany
Prior art keywords
manufacturing
semiconductor laser
laser
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69104650T
Other languages
English (en)
Other versions
DE69104650T2 (de
Inventor
Tatsuo Yokotsuka
Akira Takamori
Masato Nakajima
Tomoko Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of DE69104650D1 publication Critical patent/DE69104650D1/de
Application granted granted Critical
Publication of DE69104650T2 publication Critical patent/DE69104650T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32325—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm red laser based on InGaP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3054—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Lasers (AREA)
DE69104650T 1990-06-05 1991-06-05 Verfahren zur Herstellung eines Halbleiterlasers. Expired - Fee Related DE69104650T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP14830090 1990-06-05
JP14829990 1990-06-05

Publications (2)

Publication Number Publication Date
DE69104650D1 true DE69104650D1 (de) 1994-11-24
DE69104650T2 DE69104650T2 (de) 1995-03-30

Family

ID=26478545

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69104650T Expired - Fee Related DE69104650T2 (de) 1990-06-05 1991-06-05 Verfahren zur Herstellung eines Halbleiterlasers.

Country Status (3)

Country Link
US (1) US5190891A (de)
EP (1) EP0460937B1 (de)
DE (1) DE69104650T2 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2737477B2 (ja) * 1991-09-27 1998-04-08 日本電気株式会社 半導体レーザの製造方法
JP3423203B2 (ja) * 1997-03-11 2003-07-07 シャープ株式会社 半導体レーザ素子の製造方法
JP3525141B2 (ja) * 1997-08-20 2004-05-10 独立行政法人 科学技術振興機構 抵抗率が低いｎ型又はｐ型金属シリコンの製造方法
JP3472714B2 (ja) * 1999-01-25 2003-12-02 シャープ株式会社 半導体発光素子の製造方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0654821B2 (ja) * 1985-06-05 1994-07-20 日本電気株式会社 半導体発光素子
JPS63162598A (ja) * 1986-12-25 1988-07-06 Nec Corp Ｇａ↓０．↓５Ｉｎ↓０．↓５Ｐ結晶の成長方法
JPS63236314A (ja) * 1987-03-25 1988-10-03 Hitachi Ltd ＧａＡｌＩｎＰ結晶膜の製造方法
JPH0196982A (ja) * 1987-10-08 1989-04-14 Sharp Corp 半導体レーザ素子
DE68917941T2 (de) * 1988-01-20 1995-04-20 Nec Corp Sichtbares Licht ausstrahlender Halbleiterlaser mit (AlxGa1-x)0.5In0.5P-Kristallschichten und Verfahren zum Züchten eines (AlxGa1-x)0.5In0.5P-Kristalls.
DE68909632T2 (de) * 1988-02-09 1994-03-10 Toshiba Kawasaki Kk Halbleiterlaser-Vorrichtung und deren Herstellungsverfahren.
JPH01286480A (ja) * 1988-05-13 1989-11-17 Toshiba Corp 可視光発光素子
JPH069282B2 (ja) * 1988-09-09 1994-02-02 株式会社東芝 半導体レーザ装置
US5016252A (en) * 1988-09-29 1991-05-14 Sanyo Electric Co., Ltd. Semiconductor laser device
JPH0298984A (ja) * 1988-10-06 1990-04-11 Denki Kagaku Kogyo Kk ＩｎＧａＡｌｐ　半導体発光素子
JP2831667B2 (ja) * 1988-12-14 1998-12-02 株式会社東芝 半導体レーザ装置及びその製造方法
JPH02178918A (ja) * 1988-12-28 1990-07-11 Toshiba Corp 化合物半導体結晶層の製造方法
US5048035A (en) * 1989-05-31 1991-09-10 Kabushiki Kaisha Toshiba Semiconductor light emitting device
US5202895A (en) * 1990-05-07 1993-04-13 Kabushiki Kaisha Toshiba Semiconductor device having an active layer made of ingaalp material

Also Published As

Publication number Publication date
US5190891A (en) 1993-03-02
EP0460937A2 (de) 1991-12-11
DE69104650T2 (de) 1995-03-30
EP0460937B1 (de) 1994-10-19
EP0460937A3 (en) 1992-09-09

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee