DE69219085D1 - Heteroübergang-Bipolartransistor, der für Aussertemperaturvariation unempfindlich ist und zugehörige integrierte Schaltung - Google Patents

Heteroübergang-Bipolartransistor, der für Aussertemperaturvariation unempfindlich ist und zugehörige integrierte Schaltung

Info

Publication number
DE69219085D1
DE69219085D1 DE69219085T DE69219085T DE69219085D1 DE 69219085 D1 DE69219085 D1 DE 69219085D1 DE 69219085 T DE69219085 T DE 69219085T DE 69219085 T DE69219085 T DE 69219085T DE 69219085 D1 DE69219085 D1 DE 69219085D1
Authority
DE
Germany
Prior art keywords
insensitive
integrated circuit
bipolar transistor
temperature variation
outside temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69219085T
Other languages
English (en)
Other versions
DE69219085T2 (de
Inventor
Haila Wang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Electronics Corp
Original Assignee
France Telecom SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by France Telecom SA filed Critical France Telecom SA
Publication of DE69219085D1 publication Critical patent/DE69219085D1/de
Application granted granted Critical
Publication of DE69219085T2 publication Critical patent/DE69219085T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/737—Hetero-junction transistors
    • H01L29/7371—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
    • H01L27/0211—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique adapted for requirements of temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/7302—Bipolar junction transistors structurally associated with other devices
    • H01L29/7304—Bipolar junction transistors structurally associated with other devices the device being a resistive element, e.g. ballasting resistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
DE1992619085 1991-12-11 1992-12-08 Heteroübergang-Bipolartransistor, der für Aussertemperaturvariation unempfindlich ist und zugehörige integrierte Schaltung Expired - Lifetime DE69219085T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9115342A FR2685128B1 (fr) 1991-12-11 1991-12-11 Transistor bipolaire a heterojonction insensible a la variation de la temperature exterieure et circuit integre associe.

Publications (2)

Publication Number Publication Date
DE69219085D1 true DE69219085D1 (de) 1997-05-22
DE69219085T2 DE69219085T2 (de) 1997-10-30

Family

ID=9419904

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1992619085 Expired - Lifetime DE69219085T2 (de) 1991-12-11 1992-12-08 Heteroübergang-Bipolartransistor, der für Aussertemperaturvariation unempfindlich ist und zugehörige integrierte Schaltung

Country Status (5)

Country Link
EP (1) EP0546919B1 (de)
JP (1) JP3457963B2 (de)
DE (1) DE69219085T2 (de)
FR (1) FR2685128B1 (de)
WO (1) WO1993012541A1 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2726125A1 (fr) * 1994-10-25 1996-04-26 Thomson Csf Composant semiconducteur a transistors bipolaires, stabilises thermiquement
JPH08279561A (ja) * 1995-04-07 1996-10-22 Mitsubishi Electric Corp バイポーラトランジスタ並びに該バイポーラトランジスタを用いた増幅器および集積回路
US9209095B2 (en) 2014-04-04 2015-12-08 International Business Machines Corporation III-V, Ge, or SiGe fin base lateral bipolar transistor structure and method

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2458903A1 (fr) * 1979-06-12 1981-01-02 Thomson Csf Procede et dispositif pour la reduction des reactions thermiques dans les circuits integres monolithiques

Also Published As

Publication number Publication date
FR2685128B1 (fr) 1994-02-04
DE69219085T2 (de) 1997-10-30
EP0546919B1 (de) 1997-04-16
EP0546919A1 (de) 1993-06-16
JP3457963B2 (ja) 2003-10-20
WO1993012541A1 (fr) 1993-06-24
FR2685128A1 (fr) 1993-06-18
JPH06506089A (ja) 1994-07-07

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