DE69125983D1 - Transistor mit elektronen hoher beweglichkeit - Google Patents

Transistor mit elektronen hoher beweglichkeit

Info

Publication number
DE69125983D1
DE69125983D1 DE69125983T DE69125983T DE69125983D1 DE 69125983 D1 DE69125983 D1 DE 69125983D1 DE 69125983 T DE69125983 T DE 69125983T DE 69125983 T DE69125983 T DE 69125983T DE 69125983 D1 DE69125983 D1 DE 69125983D1
Authority
DE
Germany
Prior art keywords
electronics
transistor
high mobility
mobility
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69125983T
Other languages
English (en)
Other versions
DE69125983T2 (de
Inventor
Yi Pao
James Harris
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Varian Medical Systems Inc
Original Assignee
Varian Associates Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Varian Associates Inc filed Critical Varian Associates Inc
Application granted granted Critical
Publication of DE69125983D1 publication Critical patent/DE69125983D1/de
Publication of DE69125983T2 publication Critical patent/DE69125983T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
    • H01L29/7783—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
    • H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
DE69125983T 1990-02-20 1991-02-15 Transistor mit elektronen hoher beweglichkeit Expired - Fee Related DE69125983T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/481,849 US5270798A (en) 1990-02-20 1990-02-20 High electron mobility transistor
PCT/US1991/001038 WO1991013466A1 (en) 1990-02-20 1991-02-15 High electron mobility transistor

Publications (2)

Publication Number Publication Date
DE69125983D1 true DE69125983D1 (de) 1997-06-12
DE69125983T2 DE69125983T2 (de) 1997-10-09

Family

ID=23913631

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69125983T Expired - Fee Related DE69125983T2 (de) 1990-02-20 1991-02-15 Transistor mit elektronen hoher beweglichkeit

Country Status (4)

Country Link
US (1) US5270798A (de)
EP (1) EP0469136B1 (de)
DE (1) DE69125983T2 (de)
WO (1) WO1991013466A1 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3254823B2 (ja) * 1993-06-28 2002-02-12 住友化学工業株式会社 半導体エピタキシャル基板およびその製造方法
US5603765A (en) * 1993-12-01 1997-02-18 Hughes Aircraft Company Method of growing high breakdown voltage allnas layers in InP devices by low temperature molecular beam epitaxy
JPH07183493A (ja) * 1993-12-24 1995-07-21 Mitsubishi Electric Corp 半導体装置
US5895941A (en) * 1996-07-01 1999-04-20 Mitsubishi Denki Kabushiki Kaisha Field effect transistor with electrode portions under T-shaped gate structure
US6150680A (en) * 1998-03-05 2000-11-21 Welch Allyn, Inc. Field effect semiconductor device having dipole barrier
US6936900B1 (en) * 2000-05-04 2005-08-30 Osemi, Inc. Integrated transistor devices
US6727531B1 (en) * 2000-08-07 2004-04-27 Advanced Technology Materials, Inc. Indium gallium nitride channel high electron mobility transistors, and method of making the same
US6989556B2 (en) * 2002-06-06 2006-01-24 Osemi, Inc. Metal oxide compound semiconductor integrated transistor devices with a gate insulator structure
US7187045B2 (en) * 2002-07-16 2007-03-06 Osemi, Inc. Junction field effect metal oxide compound semiconductor integrated transistor devices
US20070138506A1 (en) * 2003-11-17 2007-06-21 Braddock Walter D Nitride metal oxide semiconductor integrated transistor devices
WO2005061756A1 (en) * 2003-12-09 2005-07-07 Osemi, Inc. High temperature vacuum evaporation apparatus
JP5087818B2 (ja) * 2005-03-25 2012-12-05 日亜化学工業株式会社 電界効果トランジスタ
US8148718B2 (en) * 2007-05-31 2012-04-03 The Regents Of The University Of California Low voltage transistors
US8497527B2 (en) * 2008-03-12 2013-07-30 Sensor Electronic Technology, Inc. Device having active region with lower electron concentration
US8729486B2 (en) * 2010-06-23 2014-05-20 The Board Of Trustees Of The Leland Stanford Junior University MODFET active pixel X-ray detector

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5691477A (en) * 1979-12-25 1981-07-24 Nec Corp Semiconductor
US4916498A (en) * 1985-09-15 1990-04-10 Trw Inc. High electron mobility power transistor
JPS63308965A (ja) * 1987-06-11 1988-12-16 Toshiba Corp ヘテロ接合電界効果トランジスタ
JPH088353B2 (ja) * 1988-01-21 1996-01-29 三菱電機株式会社 二次元ヘテロ接合素子

Also Published As

Publication number Publication date
EP0469136A4 (en) 1993-02-24
DE69125983T2 (de) 1997-10-09
US5270798A (en) 1993-12-14
EP0469136A1 (de) 1992-02-05
EP0469136B1 (de) 1997-05-07
WO1991013466A1 (en) 1991-09-05

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee